SI2304DDS-T1-GE3

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SI2304DDS-T1-GE3

MOSFET N-CH 30V 3.3A/3.6A SOT23

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 3.3A (Ta), 3.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 60mOhm @ 3.2A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 6.7 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 235 pF @ 15 V
PowerDissipation(Max) 1.1W (Ta), 1.7W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

概要

Description

SI2304DDS-T1-GE3 is a specific type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for low-voltage applications, providing efficient switching and amplification capabilities. The device features a N-channel configuration, which allows it to control electrical power in various electronic circuits. Key specifications include a low on-resistance (R_DS(on)), which minimizes power loss during operation, and a high current rating, making it suitable for applications like power management, motor control, and switching regulators.
The "T1" designation typically indicates the package type, while "GE3" signifies that the part is RoHS compliant, meaning it is free from harmful substances. Overall, the SI2304DDS-T1-GE3 is popular in consumer electronics, automotive applications, and industrial systems for its reliability and performance in switching applications.

Features

The SI2304DDS-T1-GE3 is a N-channel MOSFET designed for various applications, such as power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The continuous drain current (I_D) is rated at 20A, making it suitable for high-current applications.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 8.5 mΩ at V_GS = 10V, enhancing efficiency and thermal performance.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1V to 2.5V, allowing for operation with low gate voltages.
5. Package Type: It is available in a compact and thermally efficient SO-8 package, facilitating easy integration in various layouts.
6. Fast Switching: The device provides fast switching speeds, ideal for applications like DC-DC converters and power management systems.
7. Thermal Performance: It features good thermal characteristics, ensuring reliable operation under load.
Overall, the SI2304DDS-T1-GE3 is an efficient and versatile component for electronic circuit designs.

Package

The SI2304DDS-T1-GE3 is packaged in a SOT-23-3 plastic surface mount package.

Pinout

The SI2304DDS-T1-GE3 is a dual N-channel MOSFET package with a pin count of 8. The primary functions of the pins are as follows:
1. Gate1 (G1): Controls the first MOSFET.
2. Drain1 (D1): The drain terminal for the first MOSFET.
3. Source1 (S1): The source terminal for the first MOSFET.
4. Gate2 (G2): Controls the second MOSFET.
5. Drain2 (D2): The drain terminal for the second MOSFET.
6. Source2 (S2): The source terminal for the second MOSFET.
7. Drain (D): Common drain for both MOSFETs.
8. Source (S): Common source for both MOSFETs.
This device is commonly used in applications like power management and switching. It offers low on-resistance, making it suitable for efficiency-critical designs.

Manufacturer

The SI2304DDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in a wide range of products, including diodes, transistors, resistors, capacitors, and inductors. Vishay serves various industries, including automotive, industrial, telecommunications, and consumer electronics, providing solutions that enhance performance and reliability in electronic systems. The company is known for its innovation and quality, positioning itself as a key player in the electronics manufacturing sector.

Application

The SI2304DDS-T1-GE3 is a N-channel MOSFET primarily used in low-voltage applications such as power management, switching regulators, DC-DC converters, and load switching. Its fast switching speed and low on-resistance make it suitable for portable devices, battery management systems, and various consumer electronics. Additionally, it is utilized in motor control applications and as a load driver in automotive and industrial systems.

Equivalent

The SI2304DDS-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. For specific applications and conditions, you may also consider the MIC4427 or the IRLML2502. Always verify parameters like V_DS, I_D, R_DS(on), and package type to ensure compatibility.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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