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SI2302DS
- メーカー
- Mfr。パート #SI2302DS
- パッケージ
- データシート
- 在庫中2196
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仕様
| Technology | Si |
| Brand | NXP Semiconductors |
| Product Type | MOSFETs |
| Subcategory | Transistors |
概要
Description
SI2302DS is a dual N-channel MOSFET designed for high-efficiency switching applications. It features low on-resistance, enabling minimal power loss and enhanced thermal performance, making it suitable for power management in consumer electronics, LED drivers, and motor control applications. The device typically operates at voltages up to 30V and supports high-speed switching, which is crucial for improving overall system efficiency.
Additionally, the SI2302DS offers robust thermal stability and is packaged in a compact form factor, facilitating easy integration into circuit designs. Its gate threshold voltage is optimized for both low-voltage applications and logic-level drive compatibility. Overall, SI2302DS is a reliable choice for engineers seeking efficient and compact solutions in their electronic designs.
Additionally, the SI2302DS offers robust thermal stability and is packaged in a compact form factor, facilitating easy integration into circuit designs. Its gate threshold voltage is optimized for both low-voltage applications and logic-level drive compatibility. Overall, SI2302DS is a reliable choice for engineers seeking efficient and compact solutions in their electronic designs.
Features
The SI2302DS is a N-channel MOSFET designed for low-voltage and low-power applications. Key features include:
1. Low On-Resistance (RDS(on)): Offers efficient performance with minimal power loss, enhancing thermal management.
2. High Speed: Enables fast switching, suitable for applications in power management and automotive electronics.
3. Compact Package: Typically available in a small footprint, making it ideal for space-constrained designs.
4. High Voltage Rating: Supports higher voltage applications, increasing versatility in circuit design.
5. Low Gate Charge: Reduces the drive power required, improving efficiency in switching applications.
6. Temperature Range: Operates effectively across a wide temperature range, ensuring reliability in various conditions.
These attributes make the SI2302DS suitable for applications like DC-DC converters, load switches, and motor drives.
1. Low On-Resistance (RDS(on)): Offers efficient performance with minimal power loss, enhancing thermal management.
2. High Speed: Enables fast switching, suitable for applications in power management and automotive electronics.
3. Compact Package: Typically available in a small footprint, making it ideal for space-constrained designs.
4. High Voltage Rating: Supports higher voltage applications, increasing versatility in circuit design.
5. Low Gate Charge: Reduces the drive power required, improving efficiency in switching applications.
6. Temperature Range: Operates effectively across a wide temperature range, ensuring reliability in various conditions.
These attributes make the SI2302DS suitable for applications like DC-DC converters, load switches, and motor drives.
Package
The SI2302DS is typically available in a SOT-23 package type. This small surface-mount package is designed for low-power applications, providing efficient thermal performance and space-saving benefits in electronic designs.
Pinout
The SI2302DS is a dual N-channel MOSFET in a 6-pin SOT-23 package. Its pin count is 6, and the functions of the pins are as follows:
1. Pin 1 (Gate1): Controls the first N-channel MOSFET.
2. Pin 2 (Source1): Source terminal of the first N-channel MOSFET.
3. Pin 3 (Drain1): Drain terminal of the first N-channel MOSFET.
4. Pin 4 (Drain2): Drain terminal of the second N-channel MOSFET.
5. Pin 5 (Source2): Source terminal of the second N-channel MOSFET.
6. Pin 6 (Gate2): Controls the second N-channel MOSFET.
The SI2302DS is commonly used for load switching and power management applications due to its low R_DS(on) and compact size.
1. Pin 1 (Gate1): Controls the first N-channel MOSFET.
2. Pin 2 (Source1): Source terminal of the first N-channel MOSFET.
3. Pin 3 (Drain1): Drain terminal of the first N-channel MOSFET.
4. Pin 4 (Drain2): Drain terminal of the second N-channel MOSFET.
5. Pin 5 (Source2): Source terminal of the second N-channel MOSFET.
6. Pin 6 (Gate2): Controls the second N-channel MOSFET.
The SI2302DS is commonly used for load switching and power management applications due to its low R_DS(on) and compact size.
Manufacturer
The SI2302DS is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the discrete semiconductors and passive components market. It specializes in manufacturing a wide range of electronic components, including MOSFETs, diodes, capacitors, resistors, and inductors, which are essential for various applications in consumer electronics, automotive, industrial, and telecommunications sectors. Founded in 1962, Vishay has established itself as a key player in the electronics industry, focusing on innovation and quality in component design and production.
Application
The SI2302DS is a N-channel MOSFET widely used in applications such as power management, load switching, motor control, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for portable devices, DC-DC converters, and LED drivers, enhancing efficiency and performance in consumer electronics, automotive, and industrial applications.
Equivalent
The SI2302DS is a N-channel MOSFET. Equivalent products include the BSS138, IRLML2502, and 2N7000. Always verify specifications such as V_DS, I_D, and R_DS(on) to ensure compatibility for your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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