SI2302ADS-T1-E3

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SI2302ADS-T1-E3

MOSFET N-CH 20V 2.1A SOT23-3

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 2.1A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 60mOhm @ 3.6A, 4.5V
Vgs(th)(Max)@Id 1.2V @ 50µA
GateCharge(Qg)(Max)@Vgs 10 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 300 pF @ 10 V
PowerDissipation(Max) 700mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

概要

Description

SI2302ADS-T1-E3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency switching applications. It features low on-resistance (R_DS(on)), enabling reduced power loss and improved thermal performance. The device typically supports a voltage rating of up to 30V and can handle continuous drain currents of several amperes, making it suitable for various applications, including power management, DC-DC converters, and motor control.
The package type is often SOT-23, which allows for compact designs in electronic circuits. Its fast switching speed contributes to enhanced performance in high-frequency applications. Additionally, the SI2302ADS-T1-E3 is characterized by its robustness and reliability, making it a popular choice among engineers for consumer electronics and industrial applications.
Overall, this MOSFET is valued for its efficiency, compact size, and versatility in modern electronic designs.

Features

The SI2302ADS-T1-E3 is an N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Low On-Resistance (RDS(on)): Offers low conduction losses, enhancing efficiency in power applications.
2. High Speed Switching: Ideal for fast switching applications, improving overall system performance.
3. Voltage Rating: Operates at a maximum drain-source voltage (VDS) of 30V, suitable for numerous low-voltage applications.
4. Current Rating: Supports a continuous drain current (ID) of up to 9.2A, making it capable of handling significant loads.
5. Package Type: Available in a compact SOT-23 package, facilitating space-efficient designs.
6. Thermal Performance: Features good thermal characteristics, allowing for reliable operation under various conditions.
7. RoHS Compliant: Environmentally friendly, meeting industry standards for hazardous materials.
These attributes make the SI2302ADS-T1-E3 suitable for applications such as load switching, power management, and motor control in consumer electronics, automotive, and industrial systems.

Package

The SI2302ADS-T1-E3 is packaged in a SOT-23 (Small Outline Transistor) format. This surface-mount package is compact and widely used for various applications in electronics.

Pinout

The SI2302ADS-T1-E3 is a dual N-channel MOSFET in a surface-mount package with a total of 8 pins. The pin configuration and their primary functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first N-channel MOSFET.
3. Source 1 (S1) - The source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second N-channel MOSFET.
6. Source 2 (S2) - The source terminal for the second N-channel MOSFET.
7. Drain 1 (D1) - Connection point for external circuitry related to the first MOSFET.
8. Drain 2 (D2) - Connection point for external circuitry related to the second MOSFET.
The device is commonly used for power management applications, switching, and amplification in electronic circuits.

Manufacturer

The SI2302ADS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer specializing in discrete semiconductors and passive electronic components. The company serves various industries, including automotive, industrial, telecommunications, computing, and consumer electronics. Established in 1962, Vishay has a significant presence in the electronic components market, known for its innovation and broad product portfolio, which includes MOSFETs, diodes, resistors, capacitors, and more. The SI2302ADS-T1-E3 is a N-channel MOSFET, commonly used in power management and switching applications.

Application

The SI2302ADS-T1-E3 is a N-channel MOSFET primarily used in low-voltage applications. Its application areas include power management in portable devices, DC-DC converters, load switching, and motor control in consumer electronics, telecommunications, and industrial equipment. Its low R_DS(on) and fast switching capabilities make it suitable for efficient power conversion and signal amplification.

Equivalent

The SI2302ADS-T1-E3 is a dual N-channel MOSFET. Equivalent products include the BSS138, IRF3708, and AO3400. Ensure to check specifications like voltage, current ratings, and package types to confirm compatibility for your specific application.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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