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SI2301
MOSFETs -20V -2.8A
- メーカー
- Mfr。パート #SI2301
- パッケージ
- データシート SI2301 DataSheet
- 在庫中24913
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | MouseReel |
| Standard Pack Qty | 3000 |
概要
Description
SI2301, often referred to in academic contexts, typically pertains to a course in a specific field, possibly related to information technology, computer science, or data analysis. The course generally covers fundamental concepts, methodologies, and applications relevant to the subject matter. Students can expect to engage with both theoretical frameworks and practical exercises, facilitating a comprehensive understanding of key principles. The curriculum may include topics such as programming basics, data structures, algorithms, and the ethical implications of technology use.
Assessment methods usually involve a mix of assignments, projects, and examinations to evaluate student comprehension and practical skills. The course aims to prepare students for advanced studies or careers in technology-related fields, emphasizing critical thinking, problem-solving, and collaborative work. Overall, SI2301 is designed to equip students with essential knowledge and skills for navigating the complexities of the digital landscape.
Assessment methods usually involve a mix of assignments, projects, and examinations to evaluate student comprehension and practical skills. The course aims to prepare students for advanced studies or careers in technology-related fields, emphasizing critical thinking, problem-solving, and collaborative work. Overall, SI2301 is designed to equip students with essential knowledge and skills for navigating the complexities of the digital landscape.
Features
The SI2301 is a N-channel MOSFET designed for low-voltage applications, featuring a low on-resistance and high-speed switching capabilities. Key features include:
1. Drain-Source Voltage (Vds): Typically rated up to 20V, suitable for low-voltage applications.
2. Continuous Drain Current (Id): Handles up to 3.3A, allowing for efficient power management.
3. Low On-Resistance (Rds(on)): Around 0.2 ohms at 10V gate voltage, minimizing power loss during operation.
4. Gate Threshold Voltage (Vgs(th)): Ranges from 1 to 3V, enabling operation with low gate drive voltages.
5. Fast Switching Speed: Ideal for high-frequency applications, improving overall efficiency.
6. Package Options: Available in SOT-23 and other compact packages, facilitating easy integration in space-constrained designs.
7. RoHS Compliance: Meets environmental standards for hazardous substances.
These features make the SI2301 suitable for applications in power management, battery management systems, and load switching in portable devices.
1. Drain-Source Voltage (Vds): Typically rated up to 20V, suitable for low-voltage applications.
2. Continuous Drain Current (Id): Handles up to 3.3A, allowing for efficient power management.
3. Low On-Resistance (Rds(on)): Around 0.2 ohms at 10V gate voltage, minimizing power loss during operation.
4. Gate Threshold Voltage (Vgs(th)): Ranges from 1 to 3V, enabling operation with low gate drive voltages.
5. Fast Switching Speed: Ideal for high-frequency applications, improving overall efficiency.
6. Package Options: Available in SOT-23 and other compact packages, facilitating easy integration in space-constrained designs.
7. RoHS Compliance: Meets environmental standards for hazardous substances.
These features make the SI2301 suitable for applications in power management, battery management systems, and load switching in portable devices.
Package
The SI2301 is commonly available in a SOT-23 package type. This surface-mount package features a compact design suitable for various applications, including low-voltage and high-speed switching.
Pinout
The SI2301 is a N-channel MOSFET housed in a standard SOT-23 package, typically featuring a 6-pin configuration. The pin count is as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where current flows out.
3. Source (S) - The input terminal where current flows in.
4. Drain (D) - Second Drain pin, used for better thermal performance in some layouts.
5. Source (S) - Second Source pin, also for thermal performance.
6. No Connection (NC) - Not connected; can be left floating.
Functionally, the SI2301 is designed for low-voltage applications and is suitable for use in power management, switching, and drive applications. It offers low on-resistance and fast switching speeds, making it ideal for efficient power conversion and load switching in various electronic circuits.
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where current flows out.
3. Source (S) - The input terminal where current flows in.
4. Drain (D) - Second Drain pin, used for better thermal performance in some layouts.
5. Source (S) - Second Source pin, also for thermal performance.
6. No Connection (NC) - Not connected; can be left floating.
Functionally, the SI2301 is designed for low-voltage applications and is suitable for use in power management, switching, and drive applications. It offers low on-resistance and fast switching speeds, making it ideal for efficient power conversion and load switching in various electronic circuits.
Manufacturer
The SI2301 is manufactured by Vishay Intertechnology, Inc., a well-established American company specializing in a wide range of electronic components. Vishay is known for producing discrete semiconductors, capacitors, and other passive components, serving various industries including automotive, industrial, computing, telecommunications, and consumer electronics. Founded in 1962, the company has built a reputation for innovation and quality in the electronic component market, making it a key player in the global supply chain for electronics. The SI2301 is a N-channel MOSFET, commonly used in power management applications due to its efficiency and performance characteristics.
Application
The SI2301 is a N-channel MOSFET widely used in low-voltage applications, including power management, switching regulators, and load switching. It is suitable for use in portable devices, battery management systems, and motor control due to its low on-resistance and fast switching capabilities. Additionally, it can be found in consumer electronics, LED drivers, and various automotive applications.
Equivalent
The SI2301 is a dual N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000 for general applications. For specific replacements, consider the SI2302 or the SI2303, which offer similar specifications. Always verify electrical characteristics and package types when selecting a substitute.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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