画像は参照用のみです。
SI1869DH-T1-GE3
IC PWR SWITCH P-CHAN 1:1 SC70-6
- メーカー
- Mfr。パート #SI1869DH-T1-GE3
- パッケージ
- データシート
- 在庫中3992
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Part Status | Obsolete |
| Switch Type | General Purpose |
| Number of Outputs | 1 |
| Ratio - Input:Output | 1:1 |
| Output Configuration | High Side |
| Output Type | P-Channel |
| Interface | On/Off |
| Voltage - Load | 1.8V ~ 20V |
| Current - Output (Max) | 1.2A |
| Rds On (Typ) | 132mOhm |
| Features | Slew Rate Controlled |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-70-6 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Base Product Number | SI1869 |
概要
Description
The SI1869DH-T1-GE3 is a high-performance, low-voltage, dual N-channel MOSFET designed for efficient power management and switching applications. It features a low on-resistance, enabling reduced power loss during operation, which is crucial for applications like DC-DC converters, battery management, and load switching. The device typically operates within a voltage range suitable for consumer electronics and industrial applications, making it versatile for various designs.
Key specifications include a maximum drain-source voltage (V_DS) and low gate threshold voltage (V_GS), allowing for fast switching capabilities and compatibility with low-voltage control signals. Its compact package design enhances space efficiency on circuit boards. The SI1869DH-T1-GE3 is also characterized by its thermal performance and reliability, which are essential for maintaining performance under varying environmental conditions. Overall, it is suitable for designers seeking efficient and reliable components for modern electronic applications.
Key specifications include a maximum drain-source voltage (V_DS) and low gate threshold voltage (V_GS), allowing for fast switching capabilities and compatibility with low-voltage control signals. Its compact package design enhances space efficiency on circuit boards. The SI1869DH-T1-GE3 is also characterized by its thermal performance and reliability, which are essential for maintaining performance under varying environmental conditions. Overall, it is suitable for designers seeking efficient and reliable components for modern electronic applications.
Features
The SI1869DH-T1-GE3 is a high-performance, low-voltage, N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 30V.
2. Current Handling: Designed for continuous drain current (I_D) up to 30A, facilitating high power applications.
3. Low R_DS(on): It offers low on-state resistance, enhancing efficiency and reducing heat generation during operation.
4. Fast Switching: Optimized for fast switching speeds, making it suitable for high-frequency applications.
5. Thermal Performance: Features improved thermal resistance, allowing for better heat dissipation in compact designs.
6. Package Type: Available in a compact SO-8 package, which aids in space-constrained designs.
7. Applications: Ideal for use in power management, DC-DC converters, motor control, and other power-related designs.
These features make the SI1869DH-T1-GE3 an excellent choice for energy-efficient electronic systems.
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 30V.
2. Current Handling: Designed for continuous drain current (I_D) up to 30A, facilitating high power applications.
3. Low R_DS(on): It offers low on-state resistance, enhancing efficiency and reducing heat generation during operation.
4. Fast Switching: Optimized for fast switching speeds, making it suitable for high-frequency applications.
5. Thermal Performance: Features improved thermal resistance, allowing for better heat dissipation in compact designs.
6. Package Type: Available in a compact SO-8 package, which aids in space-constrained designs.
7. Applications: Ideal for use in power management, DC-DC converters, motor control, and other power-related designs.
These features make the SI1869DH-T1-GE3 an excellent choice for energy-efficient electronic systems.
Package
The SI1869DH-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This type of package features a thin, small footprint with eight pins, suitable for surface mounting on circuit boards.
Pinout
The SI1869DH-T1-GE3 is a dual-channel, low on-resistance, MOSFET driver integrated circuit (IC) from Vishay. It features a total of 8 pins.
The functions of the pins are as follows:
1. Pin 1 (IN_A): Input for Channel A.
2. Pin 2 (IN_B): Input for Channel B.
3. Pin 3 (VDD): Supply voltage input.
4. Pin 4 (COM): Ground connection.
5. Pin 5 (OUT_A): Output for Channel A.
6. Pin 6 (OUT_B): Output for Channel B.
7. Pin 7 (CS_A): Current sense pin for Channel A.
8. Pin 8 (CS_B): Current sense pin for Channel B.
This IC is designed for driving high and low-side N-channel MOSFETs in applications such as motor control, power management, and battery management systems. It offers fast switching speeds and low power consumption.
The functions of the pins are as follows:
1. Pin 1 (IN_A): Input for Channel A.
2. Pin 2 (IN_B): Input for Channel B.
3. Pin 3 (VDD): Supply voltage input.
4. Pin 4 (COM): Ground connection.
5. Pin 5 (OUT_A): Output for Channel A.
6. Pin 6 (OUT_B): Output for Channel B.
7. Pin 7 (CS_A): Current sense pin for Channel A.
8. Pin 8 (CS_B): Current sense pin for Channel B.
This IC is designed for driving high and low-side N-channel MOSFETs in applications such as motor control, power management, and battery management systems. It offers fast switching speeds and low power consumption.
Manufacturer
The SI1869DH-T1-GE3 is manufactured by Silicon Labs, a company that specializes in semiconductors and software for a variety of applications including IoT (Internet of Things), automotive, industrial, and consumer electronics. Silicon Labs develops a range of products such as microcontrollers, RF transceivers, and sensors, focusing on energy-efficient solutions and wireless connectivity. Established in 1996, the company is recognized for its innovation and commitment to providing high-performance semiconductor solutions tailored to meet the evolving needs of modern technology.
Application
The SI1869DH-T1-GE3 is a dual N-channel MOSFET optimized for high-speed switching applications. Its primary application areas include power management in DC-DC converters, load switching in portable devices, and motor control in consumer electronics. It is also suitable for use in power routing in battery-powered applications and various automotive systems due to its efficiency and compact size.
Equivalent
The SI1869DH-T1-GE3 is a high-performance, low-power USB type-C controller. Equivalent products include the Texas Instruments TPS65987D, the STMicroelectronics STUSB4500, and the NXP PTN5110. These alternatives also support USB-C functionality and power delivery features, suitable for similar applications. Always verify specifications and compatibility before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FZBI-08Q
Macronix
-
MX25L3233FM1I-08Q
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX25V5126FM1I
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25U25645GXDI00
Macronix