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SGT60N60FD1PN
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- Mfr。パート #SGT60N60FD1PN
- パッケージ
- データシート SGT60N60FD1PN DataSheet
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仕様
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-3P-3 |
概要
Description
The SGT60N60FD1PN is a high-performance N-channel MOSFET designed for power applications. With a voltage rating of 600V and a current rating of 60A, it is suitable for use in various applications such as power supplies, motor drives, and inverters. Key features include a low R_DS(on) (on-state resistance), which minimizes conduction losses and improves efficiency.
The device is optimized for fast switching speeds, making it ideal for high-frequency applications. It typically features a gate threshold voltage range that enhances its compatibility with various drive circuits. The SGT60N60FD1PN is housed in a TO-247 package, providing effective thermal performance and ease of mounting.
Overall, this MOSFET is well-suited for applications where high voltage, efficiency, and reliability are crucial. Its robust design allows it to handle demanding conditions while maintaining high performance.
The device is optimized for fast switching speeds, making it ideal for high-frequency applications. It typically features a gate threshold voltage range that enhances its compatibility with various drive circuits. The SGT60N60FD1PN is housed in a TO-247 package, providing effective thermal performance and ease of mounting.
Overall, this MOSFET is well-suited for applications where high voltage, efficiency, and reliability are crucial. Its robust design allows it to handle demanding conditions while maintaining high performance.
Features
The SGT60N60FD1PN is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 60A, providing robust performance in power circuits.
3. R_DS(on): The on-resistance is typically low (around 0.25 ohms), ensuring efficient operation and minimizing power loss during conduction.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for compatibility with various gate drive circuits.
5. Fast Switching: Designed for high-speed switching, which enhances efficiency in applications like switch-mode power supplies and inverters.
6. Thermal Performance: Capable of dissipating heat effectively with a thermal resistance (RθJC) suitable for high-power applications.
Overall, the SGT60N60FD1PN is a versatile MOSFET ideal for industrial, automotive, and consumer electronics applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 60A, providing robust performance in power circuits.
3. R_DS(on): The on-resistance is typically low (around 0.25 ohms), ensuring efficient operation and minimizing power loss during conduction.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for compatibility with various gate drive circuits.
5. Fast Switching: Designed for high-speed switching, which enhances efficiency in applications like switch-mode power supplies and inverters.
6. Thermal Performance: Capable of dissipating heat effectively with a thermal resistance (RθJC) suitable for high-power applications.
Overall, the SGT60N60FD1PN is a versatile MOSFET ideal for industrial, automotive, and consumer electronics applications.
Package
The SGT60N60FD1PN is packaged in a TO-220 form factor. This package type is commonly used for power transistors, providing efficient heat dissipation and ease of mounting on heat sinks.
Pinout
The SGT60N60FD1PN is a N-channel power MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): The gate terminal is used to control the MOSFET's on/off state. A voltage applied to the gate turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): The drain terminal is where the current enters when the MOSFET is in the on state. It is connected to the load in the circuit.
3. Source (S): The source terminal is where the current exits when the MOSFET is switched on. It is typically connected to ground or the negative side of the power supply in a low-side configuration.
The SGT60N60FD1PN is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 60A, making it suitable for power electronics and switching applications.
1. Gate (G): The gate terminal is used to control the MOSFET's on/off state. A voltage applied to the gate turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): The drain terminal is where the current enters when the MOSFET is in the on state. It is connected to the load in the circuit.
3. Source (S): The source terminal is where the current exits when the MOSFET is switched on. It is typically connected to ground or the negative side of the power supply in a low-side configuration.
The SGT60N60FD1PN is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 60A, making it suitable for power electronics and switching applications.
Manufacturer
The SGT60N60FD1PN is manufactured by SGS (Société Générale de Semiconducteurs), which is now part of STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of microelectronics, including power devices, sensors, and integrated circuits. The company serves various sectors, including automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its commitment to innovation and sustainability in the semiconductor industry.
Application
The SGT60N60FD1PN is a high-performance N-channel MOSFET commonly used in power electronics applications such as switch-mode power supplies (SMPS), motor drives, inverters, and DC-DC converters. Its characteristics make it suitable for high-efficiency applications in industrial equipment, renewable energy systems, and consumer electronics, where efficient power management and thermal performance are critical.
Equivalent
The SGT60N60FD1PN is a 600V N-channel MOSFET. Equivalent products include:
1. STP60NF06
2. IRFPG60
3. FQD60N60
4. MTP60N60
5. AUIRFPG60
Always verify specifications such as RDS(on), gate threshold voltage, and package type for compatibility.
1. STP60NF06
2. IRFPG60
3. FQD60N60
4. MTP60N60
5. AUIRFPG60
Always verify specifications such as RDS(on), gate threshold voltage, and package type for compatibility.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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