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SGP02N120
IGBTs FAST IGBT NPT TECH 1200V 2A
- メーカー
- Mfr。パート #SGP02N120
- パッケージ
- データシート SGP02N120 DataSheet
- 在庫中18385
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仕様
| Packaging | Tube |
| Standard Pack Qty | 500 |
概要
Description
SGP02N120 is a type of N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It is primarily used in power management and switch mode power supplies, enabling efficient control of electrical power in various electronic circuits. The "02" in its designation indicates the specific model, while "N" denotes that it is an N-channel device, which allows current to flow when a positive voltage is applied to the gate relative to the source.
This MOSFET can typically handle high drain-source voltages (up to 1200V) and supports significant continuous drain currents, making it suitable for applications such as inverters, converters, and motor drives. Its low on-resistance (RDS(on)) contributes to reduced power losses and improved thermal performance. Additionally, the SGP02N120 features fast switching speeds, enhancing efficiency in high-frequency applications. Overall, it is an essential component in modern power electronics, providing reliable performance and efficiency in various applications.
This MOSFET can typically handle high drain-source voltages (up to 1200V) and supports significant continuous drain currents, making it suitable for applications such as inverters, converters, and motor drives. Its low on-resistance (RDS(on)) contributes to reduced power losses and improved thermal performance. Additionally, the SGP02N120 features fast switching speeds, enhancing efficiency in high-frequency applications. Overall, it is an essential component in modern power electronics, providing reliable performance and efficiency in various applications.
Features
The SGP02N120 is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 120V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: The device supports a continuous drain current (I_D) of around 2A, depending on the thermal conditions and package type.
3. Low On-Resistance: It offers low on-resistance (R_DS(on)), which helps reduce power losses and improve efficiency during operation.
4. Fast Switching Speed: The MOSFET is designed for fast switching applications, enhancing performance in PWM (Pulse Width Modulation) circuits.
5. Thermal Stability: It features good thermal stability, allowing for reliable operation in various conditions.
6. Package Options: Typically available in TO-220 and other suitable packages for easy integration into circuits.
These characteristics make the SGP02N120 ideal for use in power supplies, motor drivers, and other power management applications.
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 120V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: The device supports a continuous drain current (I_D) of around 2A, depending on the thermal conditions and package type.
3. Low On-Resistance: It offers low on-resistance (R_DS(on)), which helps reduce power losses and improve efficiency during operation.
4. Fast Switching Speed: The MOSFET is designed for fast switching applications, enhancing performance in PWM (Pulse Width Modulation) circuits.
5. Thermal Stability: It features good thermal stability, allowing for reliable operation in various conditions.
6. Package Options: Typically available in TO-220 and other suitable packages for easy integration into circuits.
These characteristics make the SGP02N120 ideal for use in power supplies, motor drivers, and other power management applications.
Package
The SGP02N120 is typically packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used for power transistors and semiconductor devices, providing good thermal performance and ease of mounting.
Pinout
The SGP02N120 is a high-voltage N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin serves as the output terminal and is connected to the ground or the lower potential in the circuit.
The SGP02N120 is designed for high-voltage applications, typically rated for a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of around 2A. It is commonly used in power supply circuits, inverter applications, and other power electronics.
1. Gate (G): This pin is used to control the MOSFET; applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin serves as the output terminal and is connected to the ground or the lower potential in the circuit.
The SGP02N120 is designed for high-voltage applications, typically rated for a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of around 2A. It is commonly used in power supply circuits, inverter applications, and other power electronics.
Manufacturer
The SGP02N120 is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor focuses on a wide range of applications, including automotive, industrial, and consumer electronics. The company specializes in manufacturing power and signal management, logic, discrete, and custom devices, and is known for its innovations in energy efficiency and sustainability. ON Semiconductor serves various markets, providing products that support the growing demand for connected devices and systems.
Application
The SGP02N120 is a power MOSFET primarily used in applications such as power management, switching regulators, and motor drivers. It is suitable for high-efficiency power supplies, DC-DC converters, and industrial automation systems. Its ability to handle high voltages and currents makes it ideal for automotive, renewable energy systems, and consumer electronics.
Equivalent
The SGP02N120 is a N-channel MOSFET with a voltage rating of 120V and a current rating of 2A. Equivalent products include the IRF840, STP4NB120, and FQP13N120. Always check specific datasheets for detailed characteristics to ensure compatibility in your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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