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SCTWA20N120
IC POWER MOSFET 1200V HIP247
- メーカー
- Mfr。パート #SCTWA20N120
- パッケージ
- データシート SCTWA20N120 DataSheet
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仕様
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 239mOhm @ 10A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 400 V |
| Power Dissipation (Max) | 175W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ Long Leads |
| Package / Case | TO-247-3 |
| Base Product Number | SCTWA20 |
概要
Description
SCTWA20N120 is a specific model of a semiconductor device, often categorized within the realm of power transistors or integrated circuits. These devices are typically utilized in applications requiring efficient switching and amplification of electrical signals. The designation "SCT" may indicate a particular type of silicon carbide (SiC) technology, which is known for its high efficiency, thermal conductivity, and ability to operate at high voltages and temperatures. The "WA" could relate to a specific series or application focus, while the numbers generally represent key specifications such as voltage rating or package type.
In summary, SCTWA20N120 likely refers to a high-performance semiconductor component designed for use in power management, renewable energy systems, and electric vehicle applications, where efficiency and thermal performance are critical. For detailed specifications, manufacturers' datasheets should be consulted.
In summary, SCTWA20N120 likely refers to a high-performance semiconductor component designed for use in power management, renewable energy systems, and electric vehicle applications, where efficiency and thermal performance are critical. For detailed specifications, manufacturers' datasheets should be consulted.
Features
The SCTWA20N120 is a silicon carbide (SiC) MOSFET transistor known for its high efficiency and fast switching capabilities. Key features include:
1. High Voltage Rating: It supports a blocking voltage of up to 1200V, making it suitable for various high-voltage applications.
2. Low On-Resistance: It typically exhibits a low R_DS(on), which reduces conduction losses and improves overall system efficiency.
3. Fast Switching Speed: This device offers rapid switching capabilities, which is beneficial for reducing the size of passive components in power electronics.
4. Thermal Performance: SiC technology enables better thermal conductivity, allowing the device to operate at higher temperatures without derating.
5. High Frequency Operation: The SCTWA20N120 can operate effectively at high frequencies, making it ideal for applications like inverters and power converters.
6. Robustness: It provides high reliability in harsh environments due to its superior thermal and electrical properties.
Overall, the SCTWA20N120 is an excellent choice for applications in renewable energy systems, electric vehicles, and industrial power supplies.
1. High Voltage Rating: It supports a blocking voltage of up to 1200V, making it suitable for various high-voltage applications.
2. Low On-Resistance: It typically exhibits a low R_DS(on), which reduces conduction losses and improves overall system efficiency.
3. Fast Switching Speed: This device offers rapid switching capabilities, which is beneficial for reducing the size of passive components in power electronics.
4. Thermal Performance: SiC technology enables better thermal conductivity, allowing the device to operate at higher temperatures without derating.
5. High Frequency Operation: The SCTWA20N120 can operate effectively at high frequencies, making it ideal for applications like inverters and power converters.
6. Robustness: It provides high reliability in harsh environments due to its superior thermal and electrical properties.
Overall, the SCTWA20N120 is an excellent choice for applications in renewable energy systems, electric vehicles, and industrial power supplies.
Package
The SCTWA20N120 is typically available in a TO-247 package type, which is designed for high-power applications. This package offers efficient heat dissipation and robust performance, making it suitable for various industrial and automotive uses.
Pinout
The SCTWA20N120 is a 1200V N-channel MOSFET, typically used in high-power applications such as switch-mode power supplies and motor drives. It features a TO-247 package with a pin count of three.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied here turns the device on, allowing current to flow from drain to source.
2. Drain (D): This pin is connected to the load, through which the main current flows when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the circuit. It serves as the return path for current when the MOSFET is conducting.
In summary, the SCTWA20N120 has three pins: Gate, Drain, and Source, enabling efficient high-voltage switching applications.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied here turns the device on, allowing current to flow from drain to source.
2. Drain (D): This pin is connected to the load, through which the main current flows when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the circuit. It serves as the return path for current when the MOSFET is conducting.
In summary, the SCTWA20N120 has three pins: Gate, Drain, and Source, enabling efficient high-voltage switching applications.
Manufacturer
The SCTWA20N120 is a product manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, and manufactures a wide range of semiconductor solutions, including microcontrollers, sensors, and power management devices. The company serves various sectors, including automotive, industrial, personal electronics, and communications. STMicroelectronics is known for its innovation and commitment to sustainability, providing advanced technologies that drive the digital transformation and support energy-efficient systems.
Application
The SCTWA20N120 is a silicon carbide (SiC) MOSFET used primarily in high-efficiency power electronics applications. Its key areas include electric vehicles (EVs), renewable energy systems (like solar inverters), industrial motor drives, and power supply units. The device's high switching speed and thermal performance make it suitable for demanding applications that require efficient energy conversion and management.
Equivalent
The SCTWA20N120 is a SiC MOSFET produced by STMicroelectronics. Equivalent products include the C3M0065120K from Cree (Wolfspeed), the MPSM120A from Mitsubishi Electric, and the APT20M120J from Microsemi. Ensure to check the specifications, such as voltage, current ratings, and thermal characteristics, for compatibility in your application.
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