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SCTW35N65G2V
SICFET N-CH 650V 45A HIP247
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- Mfr。パート #SCTW35N65G2V
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- データシート SCTW35N65G2V DataSheet
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仕様
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 45A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 18V, 20V |
| RdsOn(Max)@IdVgs | 67mOhm @ 20A, 20V |
| Vgs(th)(Max)@Id | 5V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 73 nC @ 20 V |
| Vgs(Max) | +22V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 1370 pF @ 400 V |
| PowerDissipation(Max) | 240W (Tc) |
| OperatingTemperature | -55°C ~ 200°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | HiP247™ |
概要
Description
The SCTW35N65G2V is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It belongs to the silicon carbide (SiC) family, which offers superior thermal performance and efficiency compared to traditional silicon-based MOSFETs. The "35N" indicates a current rating of 35A, while "65" signifies a maximum voltage rating of 650V.
This MOSFET features low on-resistance, which reduces power loss during operation, making it suitable for applications such as power converters, motor drives, and renewable energy systems. Its high switching speeds contribute to reduced electromagnetic interference (EMI) and improved system efficiency. Additionally, the SCTW35N65G2V is often utilized in high-temperature environments due to its robust thermal characteristics.
Overall, this device is ideal for applications requiring efficient and reliable switching solutions in challenging conditions.
This MOSFET features low on-resistance, which reduces power loss during operation, making it suitable for applications such as power converters, motor drives, and renewable energy systems. Its high switching speeds contribute to reduced electromagnetic interference (EMI) and improved system efficiency. Additionally, the SCTW35N65G2V is often utilized in high-temperature environments due to its robust thermal characteristics.
Overall, this device is ideal for applications requiring efficient and reliable switching solutions in challenging conditions.
Features
The SCTW35N65G2V is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 35A, which is beneficial for demanding power systems.
3. Low On-Resistance: The device features a low R_DS(on) value, typically around 0.14 ohms, enhancing efficiency by reducing conduction losses.
4. High-Speed Switching: It offers fast switching capabilities, promoting improved performance in various applications like converters and inverters.
5. Thermal Performance: With a maximum junction temperature of 150°C, it provides reliable operation under elevated thermal conditions.
6. Package Type: It is available in a TO-247 package, facilitating easy mounting and heat dissipation.
Overall, the SCTW35N65G2V is ideal for use in power supplies, motor drives, and renewable energy applications due to its robust specifications and efficiency.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 35A, which is beneficial for demanding power systems.
3. Low On-Resistance: The device features a low R_DS(on) value, typically around 0.14 ohms, enhancing efficiency by reducing conduction losses.
4. High-Speed Switching: It offers fast switching capabilities, promoting improved performance in various applications like converters and inverters.
5. Thermal Performance: With a maximum junction temperature of 150°C, it provides reliable operation under elevated thermal conditions.
6. Package Type: It is available in a TO-247 package, facilitating easy mounting and heat dissipation.
Overall, the SCTW35N65G2V is ideal for use in power supplies, motor drives, and renewable energy applications due to its robust specifications and efficiency.
Package
The SCTW35N65G2V is packaged in a TO-247 format. This package type is designed for high-power applications, featuring a robust construction that allows for efficient heat dissipation and ease of mounting.
Pinout
The SCTW35N65G2V is a N-channel MOSFET produced by Infineon Technologies. It features a total of 4 pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching behavior. Applying a voltage to this pin turns the device on or off.
2. Drain (D): The current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the lower potential side, completing the circuit when the MOSFET is active.
4. Body Diode: While not a pin, the device includes an intrinsic body diode between the source and drain, which can conduct in the reverse direction.
The SCTW35N65G2V has a voltage rating of 650V and a continuous drain current rating of 35A, making it suitable for high-voltage applications such as power supplies and motor drives.
1. Gate (G): This pin controls the MOSFET's switching behavior. Applying a voltage to this pin turns the device on or off.
2. Drain (D): The current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the lower potential side, completing the circuit when the MOSFET is active.
4. Body Diode: While not a pin, the device includes an intrinsic body diode between the source and drain, which can conduct in the reverse direction.
The SCTW35N65G2V has a voltage rating of 650V and a continuous drain current rating of 35A, making it suitable for high-voltage applications such as power supplies and motor drives.
Manufacturer
The SCTW35N65G2V is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its wide range of products, including integrated circuits, microcontrollers, and power management devices. The company serves various sectors such as automotive, industrial, consumer electronics, and communications, focusing on innovation and sustainability. They are headquartered in Geneva, Switzerland, and operate worldwide, providing solutions that enhance performance and efficiency in electronic devices.
Application
The SCTW35N65G2V is a N-channel MOSFET primarily used in applications such as power supplies, motor drives, renewable energy systems, and industrial automation. It offers high efficiency and fast switching capabilities, making it suitable for synchronous rectification, DC-DC converters, and inverters for solar and wind energy systems. Its robust performance in high-voltage environments also makes it ideal for electric vehicles and consumer electronics.
Equivalent
The SCTW35N65G2V is a 650V N-channel MOSFET. Equivalent products include the STP35NF65, IRF3205, and FDP35N65. Always check specific datasheets for parameters like RDS(on), VGS, and package compatibility to ensure suitability for your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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