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SCT3120ALGC11
SICFET N-CH 650V 21A TO247N
- メーカー
- Mfr。パート #SCT3120ALGC11
- パッケージ TO-247-3
- データシート SCT3120ALGC11 DataSheet
- 在庫中5849
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仕様
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 18V |
| RdsOn(Max)@IdVgs | 156mOhm @ 6.7A, 18V |
| Vgs(th)(Max)@Id | 5.6V @ 3.33mA |
| GateCharge(Qg)(Max)@Vgs | 38 nC @ 18 V |
| Vgs(Max) | +22V, -4V |
| InputCapacitance(Ciss)(Max)@Vds | 460 pF @ 500 V |
| PowerDissipation(Max) | 103W (Tc) |
| OperatingTemperature | 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247N |
概要
Description
SCT3120ALGC11 is a high-performance silicon carbide (SiC) MOSFET designed for power electronics applications. This device is particularly noted for its high efficiency and thermal stability, making it suitable for use in converters, inverters, and other power management systems in industrial and automotive sectors.
The SCT3120ALGC11 features a low on-resistance, enabling effective power control and reduced energy losses during operation. Its wide bandgap semiconductor material allows for high voltage and temperature operation, providing significant advantages over traditional silicon-based MOSFETs.
This component is specifically engineered for applications requiring fast switching and low switching losses, such as renewable energy systems, electric vehicles, and power supplies. It is encapsulated in a robust package, ensuring reliability and durability in challenging environments.
In summary, the SCT3120ALGC11 represents a cutting-edge solution for improving efficiency and performance in high-power applications, leveraging the unique properties of silicon carbide technology.
The SCT3120ALGC11 features a low on-resistance, enabling effective power control and reduced energy losses during operation. Its wide bandgap semiconductor material allows for high voltage and temperature operation, providing significant advantages over traditional silicon-based MOSFETs.
This component is specifically engineered for applications requiring fast switching and low switching losses, such as renewable energy systems, electric vehicles, and power supplies. It is encapsulated in a robust package, ensuring reliability and durability in challenging environments.
In summary, the SCT3120ALGC11 represents a cutting-edge solution for improving efficiency and performance in high-power applications, leveraging the unique properties of silicon carbide technology.
Features
The SCT3120ALGC11 is a high-performance, N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain current (I_D) of up to 50A, depending on the thermal management.
3. Low On-Resistance: Features a low R_DS(on), reducing power losses and improving efficiency during operation.
4. Fast Switching Speed: Designed for rapid switching, enhancing performance in high-frequency applications.
5. Package Type: Available in a compact package, facilitating easier integration into circuit designs.
6. Thermal Performance: Good thermal stability, allowing for reliable operation under varying conditions.
7. Gate Threshold Voltage: Optimized for low gate voltage drive, suitable for interfacing with microcontrollers.
These attributes make the SCT3120ALGC11 an ideal choice for various electronic applications, particularly in power supplies, motor control, and LED drivers.
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain current (I_D) of up to 50A, depending on the thermal management.
3. Low On-Resistance: Features a low R_DS(on), reducing power losses and improving efficiency during operation.
4. Fast Switching Speed: Designed for rapid switching, enhancing performance in high-frequency applications.
5. Package Type: Available in a compact package, facilitating easier integration into circuit designs.
6. Thermal Performance: Good thermal stability, allowing for reliable operation under varying conditions.
7. Gate Threshold Voltage: Optimized for low gate voltage drive, suitable for interfacing with microcontrollers.
These attributes make the SCT3120ALGC11 an ideal choice for various electronic applications, particularly in power supplies, motor control, and LED drivers.
Package
The SCT3120ALGC11 is typically packaged in a TO-220 format. This package type is known for its good thermal performance and is commonly used for power devices, allowing for efficient heat dissipation in various electronic applications.
Pinout
The SCT3120ALGC11 is a dual N-channel MOSFET from the SCT series, typically used in power management applications. It features a pin count of 8 and is housed in a TO-220 package.
Pin Functions:
1. Gate (G1): Controls the MOSFET's on/off state for the first channel.
2. Drain (D1): The output terminal for the first channel, where current flows out.
3. Source (S1): The input terminal for the first channel, where current enters.
4. Gate (G2): Controls the MOSFET's on/off state for the second channel.
5. Drain (D2): The output terminal for the second channel.
6. Source (S2): The input terminal for the second channel.
7. Common Source (CS): The common source pin for both channels, often connected to the ground.
8. Tab (T): The package tab, used for heat dissipation.
This configuration allows for effective switching and power management in various electronic applications.
Pin Functions:
1. Gate (G1): Controls the MOSFET's on/off state for the first channel.
2. Drain (D1): The output terminal for the first channel, where current flows out.
3. Source (S1): The input terminal for the first channel, where current enters.
4. Gate (G2): Controls the MOSFET's on/off state for the second channel.
5. Drain (D2): The output terminal for the second channel.
6. Source (S2): The input terminal for the second channel.
7. Common Source (CS): The common source pin for both channels, often connected to the ground.
8. Tab (T): The package tab, used for heat dissipation.
This configuration allows for effective switching and power management in various electronic applications.
Manufacturer
The SCT3120ALGC11 is manufactured by SCT S.r.l., an Italian company specializing in the production of high-performance semiconductor devices. SCT focuses on power electronics, including MOSFETs, IGBTs, and other related components for various applications. The company is recognized for its innovative technology in power management solutions and caters to industries such as automotive, industrial automation, and renewable energy. SCT emphasizes quality and efficiency in its products, aiming to meet the growing demands for reliable power solutions in modern electronics.
Application
The SCT3120ALGC11 is a silicon-controlled rectifier (SCR) used in various applications including power control, motor control, and phase control in light dimmers. It is commonly employed in industrial equipment, heating systems, and battery chargers for efficient power management and switching. Additionally, it is suitable for over-voltage protection and voltage regulation in electronic circuits.
Equivalent
The SCT3120ALGC11 is an N-channel MOSFET. Equivalent products include the BSC010N04LS and IRL3103. Other alternatives are the STP16NF06 and FQP30N06L. Always verify specifications such as voltage, current rating, and package type to ensure compatibility for your specific application.
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