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SCT30N120

Name: SCT30N120
Rating: 4.7 (12 reviews)

SICFET N-CH 1200V 40A HIP247

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Mfr。パート #SCT30N120
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仕様

Supplier	STMicroelectronics
Package	Tube
ProductStatus	Active
FETType	N-Channel
Technology	SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)	1200 V
Current-ContinuousDrain(Id)@25°C	40A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	20V
RdsOn(Max)@IdVgs	100mOhm @ 20A, 20V
Vgs(th)(Max)@Id	2.6V @ 1mA (Typ)
GateCharge(Qg)(Max)@Vgs	105 nC @ 20 V
Vgs(Max)	+25V, -10V
InputCapacitance(Ciss)(Max)@Vds	1700 pF @ 400 V
PowerDissipation(Max)	270W (Tc)
OperatingTemperature	-55°C ~ 200°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	HiP247™

概要

Description

SCT30N120 is a high‑voltage, N‑channel power MOSFET used as a switching device in power electronics. The name usually indicates roughly 1200 V blocking voltage and about 30 A continuous current, but exact specs vary by manufacturer and package.
Key points:
- Purpose: offline SMPS, PFC, inverters, motor drives, DC-DC converters.
- Typical ratings to verify in the datasheet: Vds (around 1200 V), Id (around 30 A), Rds(on), gate charge, and thermal resistance.
- Package options: various power packages (e.g., TO‑220, D²PAK, etc.).
- Important characteristics: fast switching, body diode performance, avalanche energy tolerance, Qgs/Qgd, Vgs(th), and recommended gate drive voltage (commonly 10–12 V; some variants may be logic‑level).
- Use considerations: adequate heat sinking, proper gate drive with isolation when needed, and ensure operating area and safety margins.
Because “SCT30N120” can refer to different parts across manufacturers, always consult the exact datasheet for the precise electrical specs and packaging of the specific device you’re using.

Package

Package type depends on the supplier; “SCT30N120” isn’t a universal part number. Please provide the manufacturer or a datasheet. For HV IGBTs/MET devices, common packages are TO-220 (or TO-251), D²PAK (TO-263), or D3PAK; the exact package should be confirmed from the datasheet.

Pinout

SCT30N120 is a 3-pin N‑channel power MOSFET (typically in a TO‑247/TO‑220 style package) with an additional metal mounting/tab. Pins and functions:
- Gate (G) — control terminal that turns the channel on/off.
- Drain (D) — high‑voltage input/output; usually tied to the metal tab/heatsink.
- Source (S) — return/low‑side terminal of the channel.
Function: a 1200 V, ~30 A N‑channel MOSFET used as a high‑voltage switch in power converters and motor drives.

Application

An SCT30N120 is a high-voltage, high-current N-channel MOSFET used in power electronics. Typical applications include switching power supplies and offline converters, power-factor-correction stages, DC-DC converters, motor drives (inverters/servos), renewable-energy inverters (solar/wind), uninterruptible power supplies, welding equipment, and traction/industrial power electronics.