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SCT3060ALGC11
SICFET N-CH 650V 39A TO247N
- メーカー
- Mfr。パート #SCT3060ALGC11
- パッケージ TO-247-3
- データシート SCT3060ALGC11 DataSheet
- 在庫中4248
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仕様
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 39A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 18V |
| RdsOn(Max)@IdVgs | 78mOhm @ 13A, 18V |
| Vgs(th)(Max)@Id | 5.6V @ 6.67mA |
| GateCharge(Qg)(Max)@Vgs | 58 nC @ 18 V |
| Vgs(Max) | +22V, -4V |
| InputCapacitance(Ciss)(Max)@Vds | 852 pF @ 500 V |
| PowerDissipation(Max) | 165W (Tc) |
| OperatingTemperature | 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247N |
概要
Description
The SCT3060ALGC11 is a high-performance silicon carbide (SiC) MOSFET, designed for power applications such as switching power supplies, motor drives, and renewable energy systems. It features a high voltage rating of 600V and a current handling capability up to 30A, making it suitable for demanding environments. The device offers low on-resistance (R_DS(on)), enabling efficient operation with reduced power losses and heat generation.
Its fast switching speeds contribute to improved overall system efficiency, which is particularly beneficial in applications requiring high-frequency operation. The SCT3060ALGC11 is housed in a TO-247 package, facilitating effective thermal management and ease of integration into existing circuits.
Additionally, the use of silicon carbide technology allows for higher thermal conductivity and better performance under high temperatures compared to traditional silicon-based devices. Overall, the SCT3060ALGC11 is an ideal choice for modern power electronics, promoting energy efficiency and reliability in various industrial and commercial applications.
Its fast switching speeds contribute to improved overall system efficiency, which is particularly beneficial in applications requiring high-frequency operation. The SCT3060ALGC11 is housed in a TO-247 package, facilitating effective thermal management and ease of integration into existing circuits.
Additionally, the use of silicon carbide technology allows for higher thermal conductivity and better performance under high temperatures compared to traditional silicon-based devices. Overall, the SCT3060ALGC11 is an ideal choice for modern power electronics, promoting energy efficiency and reliability in various industrial and commercial applications.
Features
The SCT3060ALGC11 is a high-performance Silicon Carbide (SiC) MOSFET designed for power applications. Key features include:
1. High Voltage Rating: It offers a maximum drain-source voltage (V_DS) of 600V, making it suitable for various high-voltage applications.
2. Low On-Resistance: The device provides a low on-resistance (R_DS(on)), which reduces power losses and improves efficiency.
3. Fast Switching Speed: It enables high-frequency operation, beneficial for applications like switch-mode power supplies and inverters.
4. Thermal Stability: With excellent thermal conductivity, it can operate at elevated temperatures, enhancing reliability.
5. Robustness: The SCT3060ALGC11 features a built-in gate protection, enhancing durability against voltage spikes.
6. Easy to Drive: It is compatible with standard gate drive circuits, simplifying integration into existing designs.
These characteristics make the SCT3060ALGC11 suitable for applications such as renewable energy systems, electric vehicles, and industrial power supplies.
1. High Voltage Rating: It offers a maximum drain-source voltage (V_DS) of 600V, making it suitable for various high-voltage applications.
2. Low On-Resistance: The device provides a low on-resistance (R_DS(on)), which reduces power losses and improves efficiency.
3. Fast Switching Speed: It enables high-frequency operation, beneficial for applications like switch-mode power supplies and inverters.
4. Thermal Stability: With excellent thermal conductivity, it can operate at elevated temperatures, enhancing reliability.
5. Robustness: The SCT3060ALGC11 features a built-in gate protection, enhancing durability against voltage spikes.
6. Easy to Drive: It is compatible with standard gate drive circuits, simplifying integration into existing designs.
These characteristics make the SCT3060ALGC11 suitable for applications such as renewable energy systems, electric vehicles, and industrial power supplies.
Package
The SCT3060ALGC11 is packaged in a TO-220 form factor. This type of package is commonly used for power semiconductors, providing efficient thermal management and ease of mounting on heatsinks.
Pinout
The SCT3060ALGC11 is a silicon controlled rectifier (SCR) with a total of 4 pins. The pin configuration and functions are as follows:
1. Anode (A1) - This pin is connected to the anode terminal of the SCR.
2. Anode (A2) - This is the second anode connection, allowing for high current handling.
3. Gate (G) - This pin is used to trigger the SCR into conduction; applying a small current here allows the device to control a much larger load.
4. Cathode (K) - This pin is the cathode terminal, where current exits the SCR.
The SCT3060ALGC11 is designed for applications such as power control and switching in AC circuits.
1. Anode (A1) - This pin is connected to the anode terminal of the SCR.
2. Anode (A2) - This is the second anode connection, allowing for high current handling.
3. Gate (G) - This pin is used to trigger the SCR into conduction; applying a small current here allows the device to control a much larger load.
4. Cathode (K) - This pin is the cathode terminal, where current exits the SCR.
The SCT3060ALGC11 is designed for applications such as power control and switching in AC circuits.
Manufacturer
The SCT3060ALGC11 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of products, including integrated circuits (ICs), discrete components, and sensors, primarily for automotive, industrial, and consumer markets. The company is known for its innovation in technologies such as microcontrollers, power management, and analog devices, and it plays a significant role in the development of solutions for the Internet of Things (IoT), smart mobility, and energy efficiency. STMicroelectronics is headquartered in Geneva, Switzerland, and operates worldwide, contributing to advancements in electronics and various applications across multiple sectors.
Application
The SCT3060ALGC11 is a high-voltage, high-speed silicon carbide (SiC) MOSFET commonly used in applications such as power converters, electric vehicles, renewable energy systems, and industrial power supplies. Its features enable efficient switching, thermal management, and increased power density, making it ideal for high-efficiency power electronics and high-temperature environments.
Equivalent
The SCT3060ALGC11 is a silicon carbide (SiC) MOSFET. Equivalent products include the STMicroelectronics STP3065K5, Wolfspeed C3M0065090D, and the Infineon IKW30N60T2. Always verify specifications, such as voltage, current, and thermal characteristics, to ensure compatibility for your specific application.
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