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SCT2630ASTER
- メーカー
- Mfr。パート #SCT2630ASTER
- パッケージ
- データシート SCT2630ASTER DataSheet
- 在庫中15059
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Manufacturer | SCT |
| Package | ESOP-8 |
| Voltage - Supply | 4.5V~60V |
| Function | Step-down type |
| Synchronous Rectifier | No |
| Number of Outputs | 1 |
| Topology | Step-Down |
| Operating Temperature | -40℃~+150℃@(TJ) |
| Switch tube (built-in/external) | Built-in |
| Output Current | 3.5A |
| Frequency - Switching | 1.2MHz |
概要
Description
SCT2630ASTER is a specialized course focused on the principles and applications of satellite communications technology. It covers key topics such as satellite orbits, signal propagation, modulation techniques, and the design of satellite communication systems. The course emphasizes both theoretical foundations and practical applications, preparing students for careers in telecommunications, aerospace, and related fields. Students will engage in hands-on projects and case studies that enhance their understanding of satellite networks, regulatory considerations, and emerging technologies such as IoT integration and high-throughput satellites. Additionally, the course encourages critical thinking and problem-solving skills in the context of real-world communication challenges. Overall, SCT2630ASTER is designed for individuals seeking a comprehensive introduction to the rapidly evolving field of satellite communications.
Features
The SCT2630ASTER is a high-performance SiC MOSFET designed for power applications. Key features include:
1. Voltage Rating: Typically rated for high voltage, around 1200V, making it suitable for various industrial applications.
2. Low On-Resistance (RDS(on)): Offers low on-state resistance to enhance efficiency and reduce power loss during operation.
3. High Switching Speed: Facilitates improved system performance by enabling faster switching, which is advantageous for high-frequency applications.
4. Thermal Performance: Designed to handle high temperatures, ensuring reliability in demanding environments.
5. Gate Drive Voltage: Compatible with standard gate drive voltages, simplifying integration into existing systems.
6. Enhanced Reliability: Features such as ruggedness and thermal stability contribute to a longer lifespan and reduced failure rates.
7. Applications: Suitable for applications like inverters, converters, and other power electronic systems in sectors like renewable energy, electric vehicles, and industrial automation.
These features make the SCT2630ASTER a robust choice for modern power management solutions.
1. Voltage Rating: Typically rated for high voltage, around 1200V, making it suitable for various industrial applications.
2. Low On-Resistance (RDS(on)): Offers low on-state resistance to enhance efficiency and reduce power loss during operation.
3. High Switching Speed: Facilitates improved system performance by enabling faster switching, which is advantageous for high-frequency applications.
4. Thermal Performance: Designed to handle high temperatures, ensuring reliability in demanding environments.
5. Gate Drive Voltage: Compatible with standard gate drive voltages, simplifying integration into existing systems.
6. Enhanced Reliability: Features such as ruggedness and thermal stability contribute to a longer lifespan and reduced failure rates.
7. Applications: Suitable for applications like inverters, converters, and other power electronic systems in sectors like renewable energy, electric vehicles, and industrial automation.
These features make the SCT2630ASTER a robust choice for modern power management solutions.
Package
The SCT2630ASTER comes in a TO-263 package type, which is a surface-mount device (SMD) with a thermally enhanced design for better heat dissipation.
Pinout
The SCT2630ASTER is a dual N-channel MOSFET in a compact surface-mount package. It typically features 8 pins. The primary functions of these pins include:
1. Gate (G): Two pins for controlling each of the two MOSFETs.
2. Drain (D): Two pins for each MOSFET to connect to the load.
3. Source (S): Two pins for each MOSFET to connect to ground or the source voltage.
The specific pin arrangement allows for efficient control in applications such as power management, motor control, and load switching. The device is designed for high-speed operation and can handle significant current and voltage levels. Always refer to the manufacturer's datasheet for detailed electrical characteristics and pin configurations.
1. Gate (G): Two pins for controlling each of the two MOSFETs.
2. Drain (D): Two pins for each MOSFET to connect to the load.
3. Source (S): Two pins for each MOSFET to connect to ground or the source voltage.
The specific pin arrangement allows for efficient control in applications such as power management, motor control, and load switching. The device is designed for high-speed operation and can handle significant current and voltage levels. Always refer to the manufacturer's datasheet for detailed electrical characteristics and pin configurations.
Manufacturer
The SCT2630ASTER is manufactured by SCT, which specializes in semiconductor products. SCT is a company that focuses on developing high-performance power and signal management solutions for various applications, including automotive, industrial, and consumer electronics. Their products often include MOSFETs, rectifiers, and other components essential for efficient power conversion and management in electronic systems. The SCT2630ASTER specifically is a part of their power MOSFET line, designed for high-efficiency applications.
Application
The SCT2630ASTER is a silicon carbide (SiC) MOSFET primarily used in high-efficiency power electronic applications. Key areas include electric vehicles (EVs), industrial motor drives, power supplies, renewable energy systems (like solar inverters), and energy storage systems. Its high voltage handling, low switching losses, and thermal performance make it suitable for demanding environments and applications requiring robust power management.
Equivalent
Equivalent products to the SCT2630ASTER chip include the SCT2630A, SCT2630, and other similar high-voltage, fast-switching MOSFETs from manufacturers like STMicroelectronics, ON Semiconductor, and Infineon. Always check specifications for current ratings, voltage, and package types to ensure compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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