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SCT2330TVBR
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- Mfr。パート #SCT2330TVBR
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- データシート SCT2330TVBR DataSheet
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仕様
| Manufacturer | SCT |
| Package | TSOT-23-6L |
| Voltage - Supply | 3.8V~32V |
| Function | Step-down type |
| Synchronous Rectifier | Yes |
| Number of Outputs | 1 |
| Topology | Step-Down |
| Operating Temperature | -40℃~+125℃ |
| Quiescent Current | 20uA |
| Switch tube (built-in/external) | Built-in |
| Output Current | 3A |
| Frequency - Switching | 360kHz~440kHz |
概要
Description
SCT2330TVBR is a high-performance, integrated circuit designed for applications in power management, particularly in switching power supplies and DC-DC converters. This device typically features a combination of a high-frequency PWM controller and a range of protection features such as over-voltage protection, under-voltage lockout, and thermal shutdown.
The SCT2330TVBR operates efficiently, providing precise voltage regulation and high power conversion efficiency, making it suitable for a variety of electronic devices, including consumer electronics, industrial equipment, and automotive applications. It is designed to operate over a wide input voltage range and can support multiple output configurations, offering flexibility in design.
In summary, the SCT2330TVBR is an essential component for engineers looking to design reliable and efficient power management solutions in their electronic systems.
The SCT2330TVBR operates efficiently, providing precise voltage regulation and high power conversion efficiency, making it suitable for a variety of electronic devices, including consumer electronics, industrial equipment, and automotive applications. It is designed to operate over a wide input voltage range and can support multiple output configurations, offering flexibility in design.
In summary, the SCT2330TVBR is an essential component for engineers looking to design reliable and efficient power management solutions in their electronic systems.
Features
The SCT2330TVBR is a high-performance, low-voltage N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Low RDS(on): Offers low on-resistance, ensuring efficient power delivery and minimal heat generation.
2. High Current Rating: Capable of handling significant current levels, making it suitable for demanding applications.
3. Wide Gate Voltage Range: Allows operation with a range of gate voltages for flexible control.
4. Fast Switching Speed: Enables quick turn-on and turn-off times, beneficial for high-frequency applications.
5. Thermal Stability: Designed to operate reliably under varying thermal conditions.
6. Compact Package: Typically available in a small footprint, optimizing space in circuit designs.
These features make the SCT2330TVBR ideal for use in DC-DC converters, motor drives, and other power management systems.
1. Low RDS(on): Offers low on-resistance, ensuring efficient power delivery and minimal heat generation.
2. High Current Rating: Capable of handling significant current levels, making it suitable for demanding applications.
3. Wide Gate Voltage Range: Allows operation with a range of gate voltages for flexible control.
4. Fast Switching Speed: Enables quick turn-on and turn-off times, beneficial for high-frequency applications.
5. Thermal Stability: Designed to operate reliably under varying thermal conditions.
6. Compact Package: Typically available in a small footprint, optimizing space in circuit designs.
These features make the SCT2330TVBR ideal for use in DC-DC converters, motor drives, and other power management systems.
Package
The SCT2330TVBR is packaged in a surface mount SO-8 (Small Outline) type package.
Pinout
The SCT2330TVBR is a dual N-channel MOSFET in a 6-pin package. It features a pin count of 6. The primary functions of the SCT2330TVBR include high-speed switching and power management in various applications such as power supplies, converters, and motor drivers.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connected to the load for the first MOSFET.
3. Source 1 (S1) - Ground or low-side connection for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Connected to the load for the second MOSFET.
6. Source 2 (S2) - Ground or low-side connection for the second MOSFET.
This device is suitable for applications requiring efficient switching performance, and it typically features a low R_DS(on) for reduced conduction losses.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connected to the load for the first MOSFET.
3. Source 1 (S1) - Ground or low-side connection for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Connected to the load for the second MOSFET.
6. Source 2 (S2) - Ground or low-side connection for the second MOSFET.
This device is suitable for applications requiring efficient switching performance, and it typically features a low R_DS(on) for reduced conduction losses.
Manufacturer
The SCT2330TVBR is manufactured by Silicon Labs, also known as Silicon Laboratories Inc. It is a publicly traded company based in the United States, specializing in the design and manufacturing of analog and mixed-signal semiconductors. Silicon Labs focuses on providing solutions for various markets, including IoT (Internet of Things), automotive, industrial, and consumer electronics. The company is known for its innovative technologies in microcontrollers, wireless connectivity, and power management. Silicon Labs emphasizes energy efficiency and high-performance products, catering to the evolving needs of modern electronic applications.
Application
The SCT2330TVBR is a high-voltage, high-speed N-channel MOSFET typically used in applications such as power supplies, motor drivers, and industrial automation. Its features make it suitable for switching power converters, LED drivers, and other high-efficiency power management systems.
Equivalent
The SCT2330TVBR is a dual N-channel MOSFET. Equivalent products include the IRLZ44N, BSS139, and AO3400. For direct substitutes, look for devices with similar voltage ratings, current capacity, and on-resistance specifications. Always check the datasheets for specific electrical characteristics to ensure compatibility for your application.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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