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SCT070H120G3AG
H2PAK-7
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- Mfr。パート #SCT070H120G3AG
- パッケージ
- データシート SCT070H120G3AG DataSheet
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仕様
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 15A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 18 V |
| Vgs (Max) | +18V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 850 V |
| Power Dissipation (Max) | 223W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
概要
Description
The SCT070H120G3AG is a high-performance silicon carbide (SiC) MOSFET designed for applications requiring efficient power management. It features a voltage rating of 1200V and a current rating of 70A, making it suitable for high-voltage applications like industrial power supplies, electric vehicles, and renewable energy systems.
This MOSFET offers advantages such as low conduction and switching losses, high thermal conductivity, and improved efficiency compared to traditional silicon-based devices. Its fast switching capabilities enable higher frequency operation, reducing the size of passive components in power electronics systems.
The SCT070H120G3AG is typically housed in a TO247 package, allowing for easy integration into existing designs. Its robustness and reliability make it a popular choice among engineers looking to enhance system performance while minimizing energy losses. Overall, the SCT070H120G3AG represents a significant advancement in power semiconductor technology, facilitating the development of more efficient and compact power solutions.
This MOSFET offers advantages such as low conduction and switching losses, high thermal conductivity, and improved efficiency compared to traditional silicon-based devices. Its fast switching capabilities enable higher frequency operation, reducing the size of passive components in power electronics systems.
The SCT070H120G3AG is typically housed in a TO247 package, allowing for easy integration into existing designs. Its robustness and reliability make it a popular choice among engineers looking to enhance system performance while minimizing energy losses. Overall, the SCT070H120G3AG represents a significant advancement in power semiconductor technology, facilitating the development of more efficient and compact power solutions.
Features
The SCT070H120G3AG is a high-performance SiC (Silicon Carbide) MOSFET designed for power applications. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: Up to 70A, allowing for robust current handling.
3. Low On-Resistance: Ensures efficient power conversion with minimal energy loss.
4. Fast Switching Speed: Improves overall system efficiency, reducing switching losses.
5. Thermal Performance: Enhanced thermal conductivity for better heat dissipation.
6. High Reliability: Robust design for demanding environments, suitable for industrial applications.
7. Gate Threshold Voltage: Optimized to ensure stable operation across varying conditions.
8. Package Type: Available in a TO-247 package, facilitating easy mounting and heat sinking.
These features make the SCT070H120G3AG ideal for applications such as renewable energy systems, industrial drives, and electric vehicles.
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: Up to 70A, allowing for robust current handling.
3. Low On-Resistance: Ensures efficient power conversion with minimal energy loss.
4. Fast Switching Speed: Improves overall system efficiency, reducing switching losses.
5. Thermal Performance: Enhanced thermal conductivity for better heat dissipation.
6. High Reliability: Robust design for demanding environments, suitable for industrial applications.
7. Gate Threshold Voltage: Optimized to ensure stable operation across varying conditions.
8. Package Type: Available in a TO-247 package, facilitating easy mounting and heat sinking.
These features make the SCT070H120G3AG ideal for applications such as renewable energy systems, industrial drives, and electric vehicles.
Package
The SCT070H120G3AG is packaged in a TO-220 form factor. This package type is commonly used for power devices, providing efficient heat dissipation and ease of mounting on heatsinks.
Pinout
The SCT070H120G3AG is a silicon carbide (SiC) MOSFET that typically comes in a TO-247 package, which has a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET by applying a voltage to turn it on or off.
2. Drain (D): This is the output pin where the load is connected and carries the main current when the device is in the 'on' state.
3. Source (S): This pin connects to the ground or negative side of the circuit, providing a return path for the current.
The SCT070H120G3AG is designed for high-efficiency power applications, capable of handling high voltage (up to 1200V) and high current (70A), making it suitable for use in various power electronics applications.
1. Gate (G): This pin is used to control the MOSFET by applying a voltage to turn it on or off.
2. Drain (D): This is the output pin where the load is connected and carries the main current when the device is in the 'on' state.
3. Source (S): This pin connects to the ground or negative side of the circuit, providing a return path for the current.
The SCT070H120G3AG is designed for high-efficiency power applications, capable of handling high voltage (up to 1200V) and high current (70A), making it suitable for use in various power electronics applications.
Manufacturer
The SCT070H120G3AG is manufactured by Sic Semiconductor, a company that specializes in producing advanced silicon carbide (SiC) power devices. Sic Semiconductor focuses on developing high-performance semiconductor solutions for various applications, including power conversion, electric vehicles, and renewable energy systems. Their products are designed to enhance efficiency, reduce energy loss, and improve thermal performance in power electronics. The company is known for its innovative approach to developing wide bandgap materials, which are critical for next-generation power management technologies.
Application
The SCT070H120G3AG is a silicon carbide (SiC) MOSFET used in various applications, including power supplies, electric vehicles, industrial motor drives, renewable energy systems, and high-frequency converters. Its high efficiency and thermal performance make it suitable for switching applications where reduced energy loss and improved thermal management are essential.
Equivalent
The SCT070H120G3AG is a 1200V, 70A SiC MOSFET. Equivalent products include:
1. C3M0070120K (Infineon)
2. SCT060H120 (SCT)
3. FGA120S120 (ON Semiconductor)
4. CMF20120 (Wolfspeed)
These alternatives offer similar voltage and current ratings, but it's essential to check specific parameters like RDS(on) and switching characteristics for compatibility.
1. C3M0070120K (Infineon)
2. SCT060H120 (SCT)
3. FGA120S120 (ON Semiconductor)
4. CMF20120 (Wolfspeed)
These alternatives offer similar voltage and current ratings, but it's essential to check specific parameters like RDS(on) and switching characteristics for compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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