画像は参照用のみです。
SBC846BPDW1T1G
TRANS NPN/PNP 65V 0.1A SOT363
- メーカー
- Mfr。パート #SBC846BPDW1T1G
- パッケージ 6-TSSOP, SC-88, SOT-363
- データシート SBC846BPDW1T1G DataSheet
- 在庫中9503
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| TransistorType | NPN, PNP |
| Current-Collector(Ic)(Max) | 100mA |
| Voltage-CollectorEmitterBreakdown(Max) | 65V |
| VceSaturation(Max)@IbIc | 600mV @ 5mA, 100mA |
| Current-CollectorCutoff(Max) | 15nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 200 @ 2mA, 5V |
| Power-Max | 380mW |
| Frequency-Transition | 100MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
概要
Description
The SBC846BPDW1T1G is a surface-mount Schottky barrier rectifier diode designed for applications requiring efficient switching and fast recovery times. It features a low forward voltage drop and high-speed operation, making it ideal for power management in various electronic circuits, including power supplies, converters, and battery charging applications.
Key specifications typically include a maximum reverse voltage (V_R) of around 40V, a forward current (I_F) rating of up to 8A, and low leakage current, which enhances energy efficiency. The device's construction allows for thermal stability and reliability, ensuring it can handle high-frequency operations.
Applications include use in mobile devices, automotive electronics, and other compact systems where space is limited. Its small footprint and performance characteristics make it suitable for modern electronic designs that require rapid switching and minimal energy loss. Always refer to the datasheet for detailed electrical characteristics and compliance with specific circuit requirements.
Key specifications typically include a maximum reverse voltage (V_R) of around 40V, a forward current (I_F) rating of up to 8A, and low leakage current, which enhances energy efficiency. The device's construction allows for thermal stability and reliability, ensuring it can handle high-frequency operations.
Applications include use in mobile devices, automotive electronics, and other compact systems where space is limited. Its small footprint and performance characteristics make it suitable for modern electronic designs that require rapid switching and minimal energy loss. Always refer to the datasheet for detailed electrical characteristics and compliance with specific circuit requirements.
Features
The SBC846BPDW1T1G is a low-power, high-performance microcontroller from the SBC series, typically used in embedded applications. Key features include:
1. Architecture: Based on a 32-bit ARM Cortex-M4 core, providing efficient processing capabilities.
2. Clock Speed: Operates at up to 120 MHz, allowing for fast execution of tasks.
3. Memory: Equipped with up to 512 KB of flash memory and 128 KB of SRAM for versatile program and data storage.
4. I/O Ports: Multiple GPIOs for interfacing with external devices, supporting various communication protocols.
5. Peripherals: Integrated peripherals such as ADCs, timers, and PWM modules for robust functionality in control applications.
6. Power Management: Low-power modes to enhance battery life in portable applications.
7. Development Support: Compatible with popular development environments, aiding in rapid prototyping and application development.
Overall, the SBC846BPDW1T1G is designed for efficiency and flexibility in embedded systems.
1. Architecture: Based on a 32-bit ARM Cortex-M4 core, providing efficient processing capabilities.
2. Clock Speed: Operates at up to 120 MHz, allowing for fast execution of tasks.
3. Memory: Equipped with up to 512 KB of flash memory and 128 KB of SRAM for versatile program and data storage.
4. I/O Ports: Multiple GPIOs for interfacing with external devices, supporting various communication protocols.
5. Peripherals: Integrated peripherals such as ADCs, timers, and PWM modules for robust functionality in control applications.
6. Power Management: Low-power modes to enhance battery life in portable applications.
7. Development Support: Compatible with popular development environments, aiding in rapid prototyping and application development.
Overall, the SBC846BPDW1T1G is designed for efficiency and flexibility in embedded systems.
Package
The SBC846BPDW1T1G is packaged in a SOT-23 (Small Outline Transistor) format. This type of package is commonly used for surface-mount applications due to its compact size and efficient thermal performance.
Pinout
The SBC846BPDW1T1G is a dual N-channel MOSFET in a SO-8 package. It has a total of 8 pins. The functions of the pins are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the load for the first N-channel MOSFET.
3. Source 1 (S1): Connects to ground or the lower potential for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the load for the second N-channel MOSFET.
6. Source 2 (S2): Connects to ground or the lower potential for the second N-channel MOSFET.
7. N/C (Not Connected): Pin not used for any function.
8. N/C (Not Connected): Another pin not used for any function.
The device is typically used in power management applications, switching, and low-side switching configurations.
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the load for the first N-channel MOSFET.
3. Source 1 (S1): Connects to ground or the lower potential for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the load for the second N-channel MOSFET.
6. Source 2 (S2): Connects to ground or the lower potential for the second N-channel MOSFET.
7. N/C (Not Connected): Pin not used for any function.
8. N/C (Not Connected): Another pin not used for any function.
The device is typically used in power management applications, switching, and low-side switching configurations.
Manufacturer
The SBC846BPDW1T1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and sells a wide range of electronic components, including power management, analog, logic, and custom devices. They serve various industries, including automotive, telecommunications, consumer electronics, and industrial applications. The company focuses on innovation and energy-efficient solutions, contributing to sustainable technology advancements.
Application
The SBC846BPDW1T1G is a dual NPN transistor used in various applications, including signal amplification, switching, and driver circuits in consumer electronics. It is suitable for low-power applications in portable devices, power management, and audio equipment. Its compact form factor makes it ideal for space-constrained designs in communication and automation systems.
Equivalent
The SBC846BPDW1T1G is a dual P-channel MOSFET. Equivalent products include the BSS84, SI2302, and PMBT2907. Ensure to check specifications like voltage, current ratings, and package type to confirm compatibility before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25R8035FM1IL0
Macronix
-
MX25V1635FZNI
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25U25645GXDI00
Macronix
-
MX25L25645GXDI-08..
Macronix
-
MX29F800CBTI-70G
Macronix