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S29GL512T10FHI010
IC FLASH 512MBIT PARALLEL 64FBGA
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- Mfr。パート #S29GL512T10FHI010
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- データシート S29GL512T10FHI010 DataSheet
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仕様
| Series | GL-T |
| Part Status | Active |
| Base Product Number | S29GL512 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 60ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
| Packaging | Tray |
| Access Time | 100 ns |
概要
Description
The S29GL512T10FHI010 is a 512Mb (64MB) NAND Flash memory chip produced by Spansion (now part of Cypress Semiconductor). It is designed for high-performance applications requiring reliable, high-density storage. Key features include:
1. Flash Memory Type: It uses a single-level cell (SLC) architecture for enhanced performance and endurance.
2. Interface: The device utilizes a parallel interface, supporting asynchronous and synchronous operations.
3. Voltage Range: Typically operates at a supply voltage of 2.7V to 3.6V, making it suitable for low-power applications.
4. Page Size: Contains a page size of 256 bytes with a sector architecture, allowing for efficient data management.
5. Endurance and Reliability: Offers high endurance (program/erase cycles) and supports various error correction mechanisms for data integrity.
6. Applications: Commonly used in embedded systems, telecommunications, automotive, and consumer electronics, where reliable and high-speed memory is needed.
This device is noted for its efficiency and speed, making it a popular choice in modern electronic designs.
1. Flash Memory Type: It uses a single-level cell (SLC) architecture for enhanced performance and endurance.
2. Interface: The device utilizes a parallel interface, supporting asynchronous and synchronous operations.
3. Voltage Range: Typically operates at a supply voltage of 2.7V to 3.6V, making it suitable for low-power applications.
4. Page Size: Contains a page size of 256 bytes with a sector architecture, allowing for efficient data management.
5. Endurance and Reliability: Offers high endurance (program/erase cycles) and supports various error correction mechanisms for data integrity.
6. Applications: Commonly used in embedded systems, telecommunications, automotive, and consumer electronics, where reliable and high-speed memory is needed.
This device is noted for its efficiency and speed, making it a popular choice in modern electronic designs.
Features
The S29GL512T10FHI010 is a 512 Mb (64 MB) NOR Flash memory device manufactured by Cypress Semiconductor. Key features include:
- Density: 512 Mb capacity, suitable for a variety of applications.
- Organization: It is organized as 64M x 8 bits.
- Access Time: Offers a fast access time of 10 ns, enhancing performance in high-speed applications.
- Interface: Compatible with standard NOR Flash memory protocols, supporting asynchronous burst read operations.
- Voltage: Operates at a single supply voltage of 3.0V to 3.6V.
- Endurance: Supports a minimum of 100,000 program/erase cycles, ensuring reliability for multiple write operations.
- Data Retention: Provides data retention of up to 20 years.
- Package Options: Available in various packages, including SOIC and BGA, for flexible integration in designs.
- Low Power Consumption: Designed for low power operation, making it suitable for battery-powered devices.
These features make the S29GL512T10FHI010 ideal for applications in automotive, industrial, and consumer electronics.
- Density: 512 Mb capacity, suitable for a variety of applications.
- Organization: It is organized as 64M x 8 bits.
- Access Time: Offers a fast access time of 10 ns, enhancing performance in high-speed applications.
- Interface: Compatible with standard NOR Flash memory protocols, supporting asynchronous burst read operations.
- Voltage: Operates at a single supply voltage of 3.0V to 3.6V.
- Endurance: Supports a minimum of 100,000 program/erase cycles, ensuring reliability for multiple write operations.
- Data Retention: Provides data retention of up to 20 years.
- Package Options: Available in various packages, including SOIC and BGA, for flexible integration in designs.
- Low Power Consumption: Designed for low power operation, making it suitable for battery-powered devices.
These features make the S29GL512T10FHI010 ideal for applications in automotive, industrial, and consumer electronics.
Package
The S29GL512T10FHI010 is packaged in a 48-pin TSOP (Thin Small Outline Package) format. This package type is designed for high-density flash memory applications, providing a compact and efficient solution for electronic devices.
Pinout
The S29GL512T10FHI010 is a 512 Mb (64 MB) NOR flash memory device manufactured by Spansion (now part of Cypress Semiconductor). It features a total of 64 pins.
Pin functions include:
- Address Pins (A0-A20): Used to select the memory addresses.
- Data Pins (DQ0-DQ31): Bidirectional data bus for data input and output (32 bits wide).
- Control Pins:
- CE# (Chip Enable): Activates the device.
- OE# (Output Enable): Controls data output.
- WE# (Write Enable): Enables write operations.
- RESET#: Resets the device.
- VCC/VSS: Power supply and ground connections.
- RY/BY# (Ready/Busy): Indicates the status of memory operations.
- WP# (Write Protect): Protects the memory from accidental writes.
This device is used in embedded applications requiring high-density storage with fast read and write capabilities.
Pin functions include:
- Address Pins (A0-A20): Used to select the memory addresses.
- Data Pins (DQ0-DQ31): Bidirectional data bus for data input and output (32 bits wide).
- Control Pins:
- CE# (Chip Enable): Activates the device.
- OE# (Output Enable): Controls data output.
- WE# (Write Enable): Enables write operations.
- RESET#: Resets the device.
- VCC/VSS: Power supply and ground connections.
- RY/BY# (Ready/Busy): Indicates the status of memory operations.
- WP# (Write Protect): Protects the memory from accidental writes.
This device is used in embedded applications requiring high-density storage with fast read and write capabilities.
Manufacturer
The manufacturer of the S29GL512T10FHI010 is Spansion, which is a company known for producing flash memory and semiconductor solutions. Spansion specializes in non-volatile memory products, specifically NOR flash memory, which is often used in embedded systems, automotive applications, and consumer electronics. The S29GL512T10FHI010 is a 512 Mb (megabit) NOR flash memory device that offers features such as fast read performance and low power consumption, making it suitable for various applications in the technology sector.
Application
The S29GL512T10FHI010 is a 512Mb flash memory chip commonly used in applications such as mobile devices, consumer electronics, automotive systems, and industrial automation. Its primary applications include firmware storage, data logging, and code execution in embedded systems, enabling fast read and write operations essential for system performance and reliability.
Equivalent
The S29GL512T10FHI010 is a 512 Mb (64 MB) NOR flash memory chip. Equivalent products include:
1. Micron MT28EW512ABA1 - 512 Mb NOR Flash
2. Winbond W25Q512 - 512 Mb Serial NOR Flash
3. Spansion S29GL512N - Similar specifications
4. STMicroelectronics M29W512 - 512 Mb NOR Flash
Ensure compatibility with your system's requirements before substitution.
1. Micron MT28EW512ABA1 - 512 Mb NOR Flash
2. Winbond W25Q512 - 512 Mb Serial NOR Flash
3. Spansion S29GL512N - Similar specifications
4. STMicroelectronics M29W512 - 512 Mb NOR Flash
Ensure compatibility with your system's requirements before substitution.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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