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S29GL512S10DHI010
S29GL512S - 512-Mbit (64 Mbyte),
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- Mfr。パート #S29GL512S10DHI010
- パッケージ
- データシート
- 在庫中725
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Part Status | Active |
概要
Description
The S29GL512S10DHI010 is a 512 Mb (64 MB) NOR flash memory device produced by Spansion, designed for high-performance applications. It features a 10 ns access time, making it suitable for fast data retrieval. This chip utilizes a single 3.0V power supply and supports both asynchronous and burst read modes, which enhances its versatility for various applications.
Its architecture allows for easy integration into systems requiring non-volatile memory, such as telecommunications, automotive, and consumer electronics. The device supports multiple programming and erasing cycles, offering reliability and data retention. Additionally, it features a uniform sector architecture, allowing for flexible data management and efficient memory use.
The S29GL512S10DHI010 is compatible with standard memory interfaces, making it easy to interface with microcontrollers and processors. Its durability and performance make it a popular choice in embedded systems that require fast and efficient memory solutions.
Its architecture allows for easy integration into systems requiring non-volatile memory, such as telecommunications, automotive, and consumer electronics. The device supports multiple programming and erasing cycles, offering reliability and data retention. Additionally, it features a uniform sector architecture, allowing for flexible data management and efficient memory use.
The S29GL512S10DHI010 is compatible with standard memory interfaces, making it easy to interface with microcontrollers and processors. Its durability and performance make it a popular choice in embedded systems that require fast and efficient memory solutions.
Features
The S29GL512S10DHI010 is a 512 Mb (64 MB) NOR Flash memory device from Cypress Semiconductor, featuring the following key attributes:
1. Architecture: It utilizes a single-level cell (SLC) architecture for reliable data storage.
2. Access Speed: Offers a maximum access time of 10 ns, suitable for high-speed applications.
3. Interface: Supports a parallel interface, making it compatible with a variety of microcontrollers and processors.
4. Voltage Range: Operates at 3.0-3.6 V, catering to low-power applications.
5. Data Integrity: Features built-in error correction and protection mechanisms to enhance data integrity.
6. Endurance: Provides a high endurance of up to 100,000 program/erase cycles.
7. Temperature Range: Rated for industrial temperature ranges of -40°C to +85°C.
8. Package Options: Available in a variety of packages, including 64-ball BGA and TSOP, for flexible design choices.
These features make the S29GL512S10DHI010 suitable for applications in automotive, industrial, and telecommunications sectors.
1. Architecture: It utilizes a single-level cell (SLC) architecture for reliable data storage.
2. Access Speed: Offers a maximum access time of 10 ns, suitable for high-speed applications.
3. Interface: Supports a parallel interface, making it compatible with a variety of microcontrollers and processors.
4. Voltage Range: Operates at 3.0-3.6 V, catering to low-power applications.
5. Data Integrity: Features built-in error correction and protection mechanisms to enhance data integrity.
6. Endurance: Provides a high endurance of up to 100,000 program/erase cycles.
7. Temperature Range: Rated for industrial temperature ranges of -40°C to +85°C.
8. Package Options: Available in a variety of packages, including 64-ball BGA and TSOP, for flexible design choices.
These features make the S29GL512S10DHI010 suitable for applications in automotive, industrial, and telecommunications sectors.
Package
The S29GL512S10DHI010 is packaged in a 48-pin TSOP (Thin Small Outline Package). This type of package is designed for surface mounting and is commonly used for flash memory devices.
Pinout
The S29GL512S10DHI010 is a 512Mb (64MB) NOR Flash memory device manufactured by Cypress Semiconductor. It features a total of 48 pins in a TSOP (Thin Small Outline Package) configuration.
Pin Function Overview:
1. Address Pins (A0-A20): Used to select memory addresses.
2. Data Pins (DQ0-DQ15): Bidirectional data pins for reading from and writing to the memory.
3. Control Pins:
- CE# (Chip Enable): Activates the chip for read/write operations.
- OE# (Output Enable): Activates output for data read.
- WE# (Write Enable): Allows data to be written to the memory.
- RP# (Reset Pin): Resets the device.
- BP0/BP1 (Block Protect Pins): Used for block protection features.
4. Vcc and GND: Power supply and ground pins for device operation.
The device operates with a supply voltage of 2.7V to 3.6V and supports asynchronous operation for fast read/write cycles.
Pin Function Overview:
1. Address Pins (A0-A20): Used to select memory addresses.
2. Data Pins (DQ0-DQ15): Bidirectional data pins for reading from and writing to the memory.
3. Control Pins:
- CE# (Chip Enable): Activates the chip for read/write operations.
- OE# (Output Enable): Activates output for data read.
- WE# (Write Enable): Allows data to be written to the memory.
- RP# (Reset Pin): Resets the device.
- BP0/BP1 (Block Protect Pins): Used for block protection features.
4. Vcc and GND: Power supply and ground pins for device operation.
The device operates with a supply voltage of 2.7V to 3.6V and supports asynchronous operation for fast read/write cycles.
Manufacturer
The manufacturer of the S29GL512S10DHI010 is Spansion LLC, which is a company known for producing flash memory devices. Spansion specializes in non-volatile memory solutions, particularly NOR flash memory, catering to a wide range of applications, including consumer electronics, automotive, and industrial sectors. The S29GL512S10DHI010 is a 512 Mb (megabit) NOR flash memory chip designed for high-performance applications, offering features like fast read and write speeds and robust data retention. Spansion, now part of Cypress Semiconductor, continues to be recognized for its innovation and reliability in the memory market.
Application
The S29GL512S10DHI010 is a 512Mb NOR Flash memory device used in various applications, including embedded systems, telecommunications, automotive electronics, consumer electronics, and industrial control systems. It is ideal for code storage, firmware updates, and data retention in applications requiring reliable non-volatile memory with fast read speeds and efficient erase/program cycles.
Equivalent
The S29GL512S10DHI010 is a 512Mb (64MB) NOR Flash memory chip. Equivalent products include the Micron MT28EW512ABA and the Winbond W29GL512V. Other alternatives may include devices from Spansion or Cypress that also meet the same specifications in terms of density, voltage, and interface. Always verify compatibility based on specific application requirements.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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