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S29GL256P11TFIV10
IC FLASH 256MBIT PARALLEL 56TSOP
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- Mfr。パート #S29GL256P11TFIV10
- パッケージ
- データシート S29GL256P11TFIV10 DataSheet
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仕様
| Series | GL-P |
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 110ns |
| Voltage - Supply | 1.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Base Product Number | S29GL256 |
| Access Time | 110 ns |
概要
Description
The S29GL256P11TFIV10 is a high-performance, 256Mb (32MB) NOR Flash memory chip manufactured by Cypress Semiconductor, now part of Infineon Technologies. It features a standard 3V power supply and offers a range of functionalities suitable for embedded applications, including code shadowing and execute-in-place (XiP) capabilities.
This chip supports fast read speeds of up to 120 MHz, with versatile programming and erasing options, including sector and block-level operations. It is designed for high reliability and endurance, typically rated for over 100,000 program/erase cycles.
The device utilizes a 256-byte programmable page size and supports various interfaces, including parallel and asynchronous modes, making it compatible with a wide range of microcontrollers and systems.
Additionally, the S29GL256P11TFIV10 incorporates features like protection against accidental writes, allowing for secure data storage in applications like automotive, industrial, and consumer electronics. Its compact package options and low power consumption make it suitable for space-constrained designs.
This chip supports fast read speeds of up to 120 MHz, with versatile programming and erasing options, including sector and block-level operations. It is designed for high reliability and endurance, typically rated for over 100,000 program/erase cycles.
The device utilizes a 256-byte programmable page size and supports various interfaces, including parallel and asynchronous modes, making it compatible with a wide range of microcontrollers and systems.
Additionally, the S29GL256P11TFIV10 incorporates features like protection against accidental writes, allowing for secure data storage in applications like automotive, industrial, and consumer electronics. Its compact package options and low power consumption make it suitable for space-constrained designs.
Features
The S29GL256P11TFIV10 is a 256 megabit (32 megabyte) NOR Flash memory device featuring the following key attributes:
1. Interface: Supports a parallel interface with a high-speed asynchronous access.
2. Density: Contains 256 Mbit (32M x 8) of memory.
3. Voltage: Operates at a voltage of 1.8V for core and 3.0V to 3.6V for I/O.
4. Access Time: Offers fast access times, typically around 70 ns.
5. Read/Write Cycles: Supports over 100,000 program/erase cycles, ensuring durability.
6. Data Retention: Designed for data retention of over 20 years.
7. Block Structure: Features a uniform sector architecture with multiple 64KB sectors and a single 128KB parameter sector.
8. Command Set: Utilizes a simple command set for programming and erasing.
9. Package Options: Available in various packages, including TSOP and BGA.
10. Applications: Commonly used in consumer electronics, automotive, and industrial applications for firmware storage.
This device is ideal for applications requiring reliable non-volatile memory with fast access and long data retention.
1. Interface: Supports a parallel interface with a high-speed asynchronous access.
2. Density: Contains 256 Mbit (32M x 8) of memory.
3. Voltage: Operates at a voltage of 1.8V for core and 3.0V to 3.6V for I/O.
4. Access Time: Offers fast access times, typically around 70 ns.
5. Read/Write Cycles: Supports over 100,000 program/erase cycles, ensuring durability.
6. Data Retention: Designed for data retention of over 20 years.
7. Block Structure: Features a uniform sector architecture with multiple 64KB sectors and a single 128KB parameter sector.
8. Command Set: Utilizes a simple command set for programming and erasing.
9. Package Options: Available in various packages, including TSOP and BGA.
10. Applications: Commonly used in consumer electronics, automotive, and industrial applications for firmware storage.
This device is ideal for applications requiring reliable non-volatile memory with fast access and long data retention.
Package
The S29GL256P11TFIV10 is packaged in a TSOP (Thin Small Outline Package) type, specifically a TSOP-48 format. This package is designed for surface mounting and is commonly used in flash memory applications.
Pinout
The S29GL256P11TFIV10 is a 256 Mb (32 MB) NOR Flash memory device from Spansion. It features a total of 48 pins.
Pin Functions:
- Address Pins (A0-A21): Used to select memory locations.
- Data Pins (DQ0-DQ31): Bi-directional data bus for reading and writing data.
- Control Pins:
- CE# (Chip Enable): Activates the chip.
- OE# (Output Enable): Enables data output.
- WE# (Write Enable): Controls write operations.
- RB# (Ready/Busy): Indicates the status of the memory operation.
- Vcc: Power supply.
- GND: Ground connection.
- WP# (Write Protect): Enables write protection when grounded.
- RESET# (Reset): Resets the device.
This configuration allows for efficient operation and integration in various applications, such as firmware storage and code execution in embedded systems.
Pin Functions:
- Address Pins (A0-A21): Used to select memory locations.
- Data Pins (DQ0-DQ31): Bi-directional data bus for reading and writing data.
- Control Pins:
- CE# (Chip Enable): Activates the chip.
- OE# (Output Enable): Enables data output.
- WE# (Write Enable): Controls write operations.
- RB# (Ready/Busy): Indicates the status of the memory operation.
- Vcc: Power supply.
- GND: Ground connection.
- WP# (Write Protect): Enables write protection when grounded.
- RESET# (Reset): Resets the device.
This configuration allows for efficient operation and integration in various applications, such as firmware storage and code execution in embedded systems.
Manufacturer
The S29GL256P11TFIV10 is manufactured by Spansion LLC, a company that specializes in flash memory solutions. Spansion, which was formed from the merger of AMD's and Fujitsu's flash memory businesses, primarily focuses on non-volatile memory products, including NOR and NAND flash memory. The company serves a variety of markets, including automotive, industrial, consumer electronics, and telecommunications. Spansion's products are widely used in applications requiring reliable data storage, such as smartphones, embedded systems, and other electronic devices.
Application
The S29GL256P11TFIV10 is a 256 Mb (32 MB) NOR Flash memory device primarily used in applications such as embedded systems, mobile devices, automotive electronics, networking equipment, and consumer electronics. Its features support firmware storage, code execution, and data retention, making it suitable for boot memory, configuration storage, and firmware updates in various industrial and consumer applications.
Equivalent
The S29GL256P11TFIV10 is a 256Mb NOR Flash memory chip. Equivalent products include the Micron MT28EW256ABA1, Winbond W25N256JW, and Spansion S29GL256N11TFIV10. These alternatives typically offer similar specifications, such as capacity, interface, and voltage requirements. Always verify compatibility based on specific application needs and datasheets.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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