RFD3055LESM9A

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RFD3055LESM9A

MOSFET N-CH 60V 11A TO252AA

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仕様

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 107mOhm @ 8A, 5V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number RFD3055

概要

Description

The RFD3055LESM9A is a high-performance RF (Radio Frequency) power amplifier designed for various communication applications. Operating in the frequency range of 30 MHz to 1 GHz, it is suitable for both commercial and industrial uses, including telecommunications, broadcasting, and wireless networking. This device features a compact design, making it ideal for integration into systems with space constraints.
The amplifier boasts a high gain and efficiency, ensuring effective signal amplification with reduced power loss. It typically supports various modulation schemes and can handle diverse input signals, making it versatile for different RF applications.
Additionally, the RFD3055LESM9A is designed for robust thermal performance, ensuring reliable operation under varying environmental conditions. Its design often incorporates built-in protection features against over-voltage and over-temperature scenarios, enhancing durability. Overall, this RF amplifier is a critical component for enhancing signal strength and maintaining quality in RF communication systems.

Features

The RFD3055LESM9A is a high-performance RF power transistor designed for use in various applications, including industrial, scientific, and medical (ISM) equipment. Key features include:
1. Frequency Range: Operates efficiently within a wide frequency range, typically from 30 MHz to 512 MHz.
2. Power Output: Capable of delivering high output power, making it suitable for demanding applications.
3. Gain: Provides high power gain, ensuring effective signal amplification.
4. Efficiency: Designed for high-efficiency operation, helping to reduce energy consumption and thermal output.
5. Package Type: Available in a robust surface-mount package, facilitating easier integration into circuits and improving thermal performance.
6. Versatility: Suitable for a variety of RF applications, including amplifiers, transmitters, and other communication devices.
This transistor is known for its reliability and performance in high-demand scenarios, making it a preferred choice among engineers and designers in the RF domain.

Package

The RFD3055LESM9A is packaged in a TO-220 form factor. This type of package is commonly used for power transistors, offering good thermal performance and ease of mounting on heatsinks for efficient heat dissipation.

Pinout

The RFD3055LESM9A is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin is the output terminal where the current flows out when the MOSFET is turned on.
3. Source (S) - This pin is the input terminal where the current flows in when the MOSFET is activated.
The RFD3055LESM9A is designed for applications such as power management and switching in various electronic circuits, providing efficient control over high current loads. Its characteristics include low on-resistance and high-speed switching capabilities, making it suitable for power supply applications.

Manufacturer

The RFD3055LESM9A is manufactured by RF Digital Corporation. RF Digital specializes in the design and production of radio frequency (RF) solutions, particularly focusing on wireless communication and RFID (Radio Frequency Identification) technologies. The company develops various products that integrate RF technology into applications such as asset tracking, supply chain management, and inventory control. Their offerings often include embedded systems, modules, and development kits tailored for both industrial and consumer markets.

Application

The RFD3055LESM9A is a high-performance RF MOSFET used in various applications, including RF amplification in wireless communication systems, industrial RF heating, and radar systems. It is suitable for transmitters, receivers, and other RF power amplification needs due to its high efficiency and power handling capabilities. Additionally, it can be utilized in automotive and consumer electronics for signal processing and transmission.

Equivalent

The RFD3055LESM9A is a Power MOSFET, and equivalent products include the IRF3055, STP3055, and FQP30N55. It's essential to verify specifications like voltage, current ratings, and Rds(on) for compatibility in your application. Always consult the datasheets for detailed comparisons.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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