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PSMN2R4-30MLD
- メーカー
- Mfr。パート #PSMN2R4-30MLD
- パッケージ
- データシート
- 在庫中2736
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Technology | Si |
| Brand | Nexperia |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Package / Case | LFPAK-33-8 |
概要
Description
PSMN2R4-30MLD refers to a specific formulation or product, potentially in the context of pharmaceuticals, biotechnology, or a similar field. PSMN2 could denote a particular protein, gene, or molecular compound, while "R4" might indicate a variant or modification. The "30MLD" likely specifies a volume or concentration, suggesting this is a solution or preparation intended for research or therapeutic use.
In a research context, such formulations could be utilized in studies related to gene expression, protein function, or disease mechanisms. Understanding the properties and applications of PSMN2R4-30MLD is essential for researchers aiming to explore its biological significance or therapeutic potential. Further details would be necessary to provide more specific applications or implications of PSMN2R4-30MLD.
In a research context, such formulations could be utilized in studies related to gene expression, protein function, or disease mechanisms. Understanding the properties and applications of PSMN2R4-30MLD is essential for researchers aiming to explore its biological significance or therapeutic potential. Further details would be necessary to provide more specific applications or implications of PSMN2R4-30MLD.
Features
The PSMN2R4-30MLD is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 60A, facilitating high power operations.
3. R_DS(on): Low on-resistance (typically around 10 mΩ), which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2.5V, allowing for effective drive with low gate voltage levels.
5. Fast Switching Speed: Designed for rapid switching, which is beneficial in high-frequency applications.
6. Package Type: Available in a DPAK package, providing good thermal performance and ease of mounting.
Overall, the PSMN2R4-30MLD is ideal for power management, motor control, and various applications in consumer electronics and automotive systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 60A, facilitating high power operations.
3. R_DS(on): Low on-resistance (typically around 10 mΩ), which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2.5V, allowing for effective drive with low gate voltage levels.
5. Fast Switching Speed: Designed for rapid switching, which is beneficial in high-frequency applications.
6. Package Type: Available in a DPAK package, providing good thermal performance and ease of mounting.
Overall, the PSMN2R4-30MLD is ideal for power management, motor control, and various applications in consumer electronics and automotive systems.
Package
The PSMN2R4-30MLD is typically packaged in a surface-mount device (SMD) format, specifically in a DPAK or similar package type. This packaging allows for efficient thermal management and compact design in electronic applications.
Pinout
The PSMN2R4-30MLD is an N-channel MOSFET with a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - This pin is where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S) - This pin is where the current enters the MOSFET when it is conducting.
4. Body (B) - Typically internally connected to the source, it acts as a substrate for the device.
The PSMN2R4-30MLD is designed for applications in power management and switching and is known for its low on-resistance and high-speed performance.
1. Gate (G) - This pin is used to control the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - This pin is where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S) - This pin is where the current enters the MOSFET when it is conducting.
4. Body (B) - Typically internally connected to the source, it acts as a substrate for the device.
The PSMN2R4-30MLD is designed for applications in power management and switching and is known for its low on-resistance and high-speed performance.
Manufacturer
The PSMN2R4-30MLD is manufactured by Nexperia, a global semiconductor company that specializes in discrete, logic, and MOSFET components. Nexperia focuses on high-volume manufacturing and is known for producing reliable, high-performance products for various applications, including automotive, industrial, and consumer electronics. The company emphasizes quality and efficiency in its manufacturing processes, leveraging its expertise in semiconductor technology to deliver innovative solutions. Nexperia was formed as a spin-off from NXP Semiconductors and operates with a strong commitment to sustainability and operational excellence.
Application
PSMN2R4-30MLD is a power semiconductor module commonly used in various applications such as electric vehicles, renewable energy systems (like solar inverters), motor drives, and industrial automation. Its high efficiency and thermal management capabilities make it suitable for high-performance power conversion and control in these areas.
Equivalent
The PSMN2R4-30MLD is a N-channel MOSFET designed for high-speed switching applications. Equivalent products include:
- IRF3205
- STP30NF10
- FQP30N06L
- BSC030N06LS
Always verify specifications such as voltage, current, and RDS(on) to ensure suitability for your application.
- IRF3205
- STP30NF10
- FQP30N06L
- BSC030N06LS
Always verify specifications such as voltage, current, and RDS(on) to ensure suitability for your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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