PSMN2R3-100SSEJ

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PSMN2R3-100SSEJ

APPLICATION SPECIFIC POWER MOSFE

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  • Mfr。パート #PSMN2R3-100SSEJ
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仕様

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 255A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17200 pF @ 50 V
Power Dissipation (Max) 341W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK88 (SOT1235)
Package / Case SOT-1235
Base Product Number PSMN2R3

概要

Description

The PSMN2R3-100SSEJ is a specific type of N-channel MOSFET transistor. It is designed for high-efficiency switching applications. Key features typically include low on-state resistance, fast switching capabilities, and reliability under high-temperature conditions. Such MOSFETs are commonly used in power management systems, automotive electronics, and other applications requiring efficient voltage regulation and switching. The "100" in the name often indicates the maximum voltage rating, and "2R3" might refer to the on-state resistance value. The "SSEJ" may refer to the specific package type or series. Always refer to the datasheet for exact specifications and usage guidelines.

Features

The PSMN2R3-100SSEJ is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency and performance in power switching applications. Key features include:
1. Voltage and Current Ratings: Typically rated for high voltage and current handling; often used in applications requiring robust power management.

2. Low On-Resistance: Designed to minimize power loss, contributing to more efficient operation and less heat generation.
3. Fast Switching Speed: Capable of rapid on/off operations, making it suitable for applications where fast switching is critical.
4. Thermal Performance: Efficient thermal management to ensure reliability and longevity even under high-power conditions.
5. Compact Package: Generally available in compact packages which help in saving space on circuit boards, beneficial for modern, space-constrained designs.
6. Rugged Construction: Built to withstand harsh electrical conditions, ensuring durability and longevity.
These features make the PSMN2R3-100SSEJ suitable for various applications, including power supplies, motor controllers, and other high-performance electronic systems.

Package

The PSMN2R3-100SSEJ is a MOSFET package type known as TO-220. It is commonly used in power applications for its ability to handle high currents and voltages, providing efficient thermal management and ease of mounting.

Pinout

The PSMN2R3-100SSEJ is a N-channel MOSFET. It typically comes in a TO-220 or similar package, which usually has three pins. The standard pin configuration for such MOSFETs is:
1. Gate (G): This pin is used to control the flow of current between the drain and source. A voltage applied here will turn the MOSFET on or off.
2. Drain (D): The drain is the pin through which the load current flows when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. The current flows out through this pin when the MOSFET is conducting.
The PSMN2R3-100SSEJ is designed for high-efficiency power switching applications. Always refer to the datasheet for specific electrical characteristics and pin configuration.

Manufacturer

The PSMN2R3-100SSEJ is manufactured by Nexperia. Nexperia is a global semiconductor company that specializes in the development and production of discrete, logic, and MOSFET devices. It was originally part of NXP Semiconductors but became an independent entity in 2017. Nexperia is known for its high-volume production capabilities and focuses on efficiency and performance in its products, serving various markets including automotive, industrial, computing, and consumer electronics.

Application

The PSMN2R3-100SSEJ is a N-channel MOSFET designed for high-efficiency power conversion applications. Its primary application areas include DC-DC converters, power management in computing and telecommunications, motor control systems, and industrial automation. It is also used in automotive applications for powertrain components and electric vehicle systems, due to its fast switching capabilities and low on-state resistance. Its efficiency and reliability make it suitable for use in various consumer electronics and power supply units.

Equivalent

The PSMN2R3-100SSEJ is a N-channel MOSFET from Nexperia. Equivalent products could include:
1. Infineon OptiMOS™ BSC010N04LS - Similar current and voltage ratings.
2. Vishay Siliconix SiR432DP - Comparable on-resistance and performance.
3. STMicroelectronics STP100N4F6 - Equivalent voltage and current characteristics.
4. ON Semiconductor NTMFS5C404NL - Similar specifications for voltage, current, and on-resistance.
Always verify the datasheets for exact specifications.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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