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PMEG6010CEJ,115
DIODE SCHOTTKY 60V 1A SOD323F
- メーカー
- Mfr。パート #PMEG6010CEJ,115
- パッケージ SC-90, SOD-323F
- データシート
- 在庫中7343
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Supplier | Nexperia USA Inc. |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 60 V |
| Current-AverageRectified(Io) | 1A (DC) |
| Voltage-Forward(Vf)(Max)@If | 660 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 50 µA @ 60 V |
| Capacitance@VrF | 68pF @ 1V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | SC-90, SOD-323F |
| SupplierDevicePackage | SOD-323F |
概要
Description
PMEG6010CEJ,115 is a PMEG-series Schottky barrier rectifier diode from Nexperia. It is a small, surface‑mount diode with a relatively high reverse voltage rating (~60 V) and a modest average forward current (about 1 A class), designed for fast switching and low forward voltage drop. Its Schottky construction means no reverse recovery charge, which is advantageous in DC‑DC converters, power supplies, polarity protection, and OR-ing applications.
Notes:
- CEJ denotes the package/leadframe variant for this SMT diode.
- 115 is typically a date/lot code and not a functional spec.
- For exact values (IF(AV), VF, IFM, reverse recovery behavior, TJ max) and thermal data, consult the PMEG6010CEJ datasheet and manufacturer marking guide.
Notes:
- CEJ denotes the package/leadframe variant for this SMT diode.
- 115 is typically a date/lot code and not a functional spec.
- For exact values (IF(AV), VF, IFM, reverse recovery behavior, TJ max) and thermal data, consult the PMEG6010CEJ datasheet and manufacturer marking guide.
Features
PMEG6010CEJ,115 features (concise):
- N-channel enhancement-mode MOSFET
- Drain-Source voltage: 60 V
- Continuous drain current: ≈1 A (max spec per device conditions)
- On-resistance: low Rds(on) for improved efficiency (typical ~0.7–1.0 Ω at Vgs = 4.5 V)
- Gate threshold: ~0.8–2.0 V (logic-level drive; conducts well at 4.5 V)
- Fast switching with low gate charge
- Avalanche rugged with robust body diode
- Package: SOT-23 (3-pin), RoHS-compliant, Pb-free
- Temperature range suitable for automotive/consumer use (approx. -55°C to 125°C)
Note: For exact numbers (Rds(on) max, Id max, and thermal specs) refer to the datasheet.
- N-channel enhancement-mode MOSFET
- Drain-Source voltage: 60 V
- Continuous drain current: ≈1 A (max spec per device conditions)
- On-resistance: low Rds(on) for improved efficiency (typical ~0.7–1.0 Ω at Vgs = 4.5 V)
- Gate threshold: ~0.8–2.0 V (logic-level drive; conducts well at 4.5 V)
- Fast switching with low gate charge
- Avalanche rugged with robust body diode
- Package: SOT-23 (3-pin), RoHS-compliant, Pb-free
- Temperature range suitable for automotive/consumer use (approx. -55°C to 125°C)
Note: For exact numbers (Rds(on) max, Id max, and thermal specs) refer to the datasheet.
Package
In a small SMD SOD-123 package (SOD-123F variant).
Pinout
- Pin count: 3 pins (SOT‑23-3 package)
- Function: N‑channel enhancement‑mode MOSFET used as a switching transistor. Pinout (typical): Gate = pin 1, Drain = pin 2, Source = pin 3.
- Function: N‑channel enhancement‑mode MOSFET used as a switching transistor. Pinout (typical): Gate = pin 1, Drain = pin 2, Source = pin 3.
Manufacturer
- Manufacturer: Nexperia.
- What kind of company: A global semiconductor company (Dutch-origin, originally Philips/NXP) that designs and manufactures discrete and logic devices, including MOSFETs, diodes, and ESD-protection components.
- What kind of company: A global semiconductor company (Dutch-origin, originally Philips/NXP) that designs and manufactures discrete and logic devices, including MOSFETs, diodes, and ESD-protection components.
Application
- High-side switching in DC-DC converters and PMICs
- Power-path/load switching in portable electronics
- Battery protection and reverse-polarity protection circuits
- LED driver and motor-driver switching applications
- General-purpose, space-constrained P-channel MOSFET switching
- Power-path/load switching in portable electronics
- Battery protection and reverse-polarity protection circuits
- LED driver and motor-driver switching applications
- General-purpose, space-constrained P-channel MOSFET switching
Equivalent
I can’t provide exact equivalents without key specs. Please share:
- Vds, Id (or current rating), Rds(on)
- Package (e.g., SOT-23, DFN)
- Any other requirements (gate charge, temp range)
With those, I’ll give concrete cross-refs (NXP/ON/Semiconductor/Infineon) and suitable substitutes for PMEG6010CEJ,115.
- Vds, Id (or current rating), Rds(on)
- Package (e.g., SOT-23, DFN)
- Any other requirements (gate charge, temp range)
With those, I’ll give concrete cross-refs (NXP/ON/Semiconductor/Infineon) and suitable substitutes for PMEG6010CEJ,115.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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