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NVTFS5826NLWFTAG
MOSFET N-CH 60V 7.6A 8WDFN
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- Mfr。パート #NVTFS5826NLWFTAG
- パッケージ WDFN-8 , u8FL
- データシート
- 在庫中2256
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 7.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 24mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 16 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 850 pF @ 25 V |
| PowerDissipation(Max) | 3.2W (Ta), 22W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-WDFN (3.3x3.3) |
概要
Description
NVTFS5826NLWFTAG is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia. This device is designed for applications that require efficient switching and amplification of electronic signals. The NVTFS5826NLWFTAG features a low on-resistance, enabling it to handle higher currents with minimal power loss, making it suitable for power management, motor control, and other high-efficiency applications.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) rating, and a low threshold voltage, which allows it to operate effectively in various electronic circuits. Its surface-mount package (DFN) enables compact designs, making it ideal for space-constrained applications.
Overall, the NVTFS5826NLWFTAG is recognized for its reliability and performance, contributing to improved efficiency in modern electronic devices.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) rating, and a low threshold voltage, which allows it to operate effectively in various electronic circuits. Its surface-mount package (DFN) enables compact designs, making it ideal for space-constrained applications.
Overall, the NVTFS5826NLWFTAG is recognized for its reliability and performance, contributing to improved efficiency in modern electronic devices.
Features
The NVTFS5826NLWFTAG is a N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: It supports continuous drain current (I_D) up to 70A, which allows it to handle significant power loads.
3. Low On-Resistance: The on-resistance (R_DS(on)) is low, typically around 9.6 mΩ, which ensures minimal power loss during operation.
4. Fast Switching: Optimized for fast switching speeds, enhancing efficiency in applications like converters and inverters.
5. Thermal Performance: Good thermal characteristics facilitate better heat dissipation, suitable for high-power applications.
6. Package Type: Available in a compact DPAK package, allowing for easy integration into circuit boards.
These features make the NVTFS5826NLWFTAG ideal for automotive, industrial, and consumer electronics applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: It supports continuous drain current (I_D) up to 70A, which allows it to handle significant power loads.
3. Low On-Resistance: The on-resistance (R_DS(on)) is low, typically around 9.6 mΩ, which ensures minimal power loss during operation.
4. Fast Switching: Optimized for fast switching speeds, enhancing efficiency in applications like converters and inverters.
5. Thermal Performance: Good thermal characteristics facilitate better heat dissipation, suitable for high-power applications.
6. Package Type: Available in a compact DPAK package, allowing for easy integration into circuit boards.
These features make the NVTFS5826NLWFTAG ideal for automotive, industrial, and consumer electronics applications.
Package
The NVTFS5826NLWFTAG is packaged in a TO-263 surface-mount format. This package type is designed for easy integration into circuit boards, providing efficient thermal management and minimizing space requirements.
Pinout
The NVTFS5826NLWFTAG is a dual N-channel MOSFET in a compact 6-pin package. It features a pin count of 6. The primary functions of this component include switching and power management applications.
The key pin functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
This device is typically used in applications like power distribution, DC-DC converters, and load switching. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs.
The key pin functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
This device is typically used in applications like power distribution, DC-DC converters, and load switching. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs.
Manufacturer
The NVTFS5826NLWFTAG is manufactured by Nexperia, a global semiconductor company that specializes in discrete, logic, and MOSFET components. Nexperia was formed from the semiconductor division of NXP Semiconductors and is known for its high-performance products used in various applications, including automotive, industrial, and consumer electronics. The company focuses on providing reliable and efficient semiconductor solutions, with a strong emphasis on quality, innovation, and sustainability. Nexperia operates several manufacturing facilities worldwide and has a robust supply chain to support its global customer base.
Application
The NVTFS5826NLWFTAG is a N-channel MOSFET commonly used in power management applications, including DC-DC converters, load switching, and power routing in various electronic devices. Its low on-resistance and fast switching capabilities make it suitable for applications such as automotive, industrial, and consumer electronics, where efficiency and reliability are crucial.
Equivalent
The NVTFS5826NLWFTAG is a low on-resistance N-channel MOSFET. Equivalent products include the NVTFS5826N and other similar low RDS(on) N-channel MOSFETs from manufacturers like Vishay (SiR582DP), Infineon, and ON Semiconductor. For precise replacements, check specific parameters like voltage rating, RDS(on), package type, and switching characteristics. Always consult datasheets for compatibility.
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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