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NVMFS6B14NLWFT1G
MOSFET N-CH 100V 11A/55A 5DFN
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- Mfr。パート #NVMFS6B14NLWFT1G
- パッケージ SO-8FL
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Ta), 55A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 13mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 1680 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 94W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
概要
Description
The NVMFS6B14NLWFT1G is a specific model of an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features low on-resistance, which helps in reducing power loss and increasing efficiency in various circuits. This device is suitable for applications such as DC-DC converters, motor drivers, and load switches.
Key specifications typically include a maximum drain-source voltage (V_DS) and a maximum continuous drain current (I_D), which determine its operational limits. The device is packaged in a compact surface-mount configuration, enhancing ease of integration into electronic circuits.
The NVMFS6B14NLWFT1G is especially valued for its fast switching speed and thermal performance, making it ideal for high-frequency applications. It can be used in automotive, industrial, and consumer electronics sectors, where efficient power management is crucial.
For specific datasheets and application notes, refer to the manufacturer's documentation, which provides detailed electrical characteristics, thermal ratings, and recommended operating conditions.
Key specifications typically include a maximum drain-source voltage (V_DS) and a maximum continuous drain current (I_D), which determine its operational limits. The device is packaged in a compact surface-mount configuration, enhancing ease of integration into electronic circuits.
The NVMFS6B14NLWFT1G is especially valued for its fast switching speed and thermal performance, making it ideal for high-frequency applications. It can be used in automotive, industrial, and consumer electronics sectors, where efficient power management is crucial.
For specific datasheets and application notes, refer to the manufacturer's documentation, which provides detailed electrical characteristics, thermal ratings, and recommended operating conditions.
Features
The NVMFS6B14NLWFT1G is an N-channel MOSFET designed for efficient power management and switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 80A, allowing for robust performance in demanding environments.
3. On-Resistance (Rds(on)): The MOSFET boasts a low on-resistance of about 6.5mΩ at Vgs = 10V, which minimizes power loss and improves efficiency.
4. Package: It is available in a TO-220 package, which aids in heat dissipation and facilitates easy mounting.
5. Fast Switching: Suitable for high-speed switching applications, making it ideal for power converters, motor control, and other power management systems.
6. Thermal Resistance: Featuring low thermal resistance, it ensures efficient operation under high power conditions.
These characteristics make the NVMFS6B14NLWFT1G ideal for applications in power supplies, automotive systems, and other high-performance circuits.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 80A, allowing for robust performance in demanding environments.
3. On-Resistance (Rds(on)): The MOSFET boasts a low on-resistance of about 6.5mΩ at Vgs = 10V, which minimizes power loss and improves efficiency.
4. Package: It is available in a TO-220 package, which aids in heat dissipation and facilitates easy mounting.
5. Fast Switching: Suitable for high-speed switching applications, making it ideal for power converters, motor control, and other power management systems.
6. Thermal Resistance: Featuring low thermal resistance, it ensures efficient operation under high power conditions.
These characteristics make the NVMFS6B14NLWFT1G ideal for applications in power supplies, automotive systems, and other high-performance circuits.
Package
The NVMFS6B14NLWFT1G is packaged in a surface-mount, small outline transistor (SOT-23) format. This package type is suitable for various applications, offering a compact design for efficient space utilization on PCBs.
Pinout
The NVMFS6B14NLWFT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a total of 8 pins.
### Pin Functions:
1. G (Gate): Controls the ON/OFF state of the MOSFET.
2. D (Drain): The terminal through which current flows out of the MOSFET when it is ON.
3. S (Source): The terminal through which current flows into the MOSFET when it is ON.
4. R (Body Diode): Internal body diode that conducts in the reverse direction when the MOSFET is OFF.
5. G (Gate): Another gate connection; typically used to drive the MOSFET in circuits.
Applications: Commonly used in power supplies, DC-DC converters, and motor drivers due to its low R_DS(on) and high efficiency.
For precise pin configurations, refer to the specific datasheet from the manufacturer.
### Pin Functions:
1. G (Gate): Controls the ON/OFF state of the MOSFET.
2. D (Drain): The terminal through which current flows out of the MOSFET when it is ON.
3. S (Source): The terminal through which current flows into the MOSFET when it is ON.
4. R (Body Diode): Internal body diode that conducts in the reverse direction when the MOSFET is OFF.
5. G (Gate): Another gate connection; typically used to drive the MOSFET in circuits.
Applications: Commonly used in power supplies, DC-DC converters, and motor drivers due to its low R_DS(on) and high efficiency.
For precise pin configurations, refer to the specific datasheet from the manufacturer.
Manufacturer
The manufacturer of the NVMFS6B14NLWFT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in providing a wide range of products, including power semiconductors, sensors, and integrated circuits. The company serves various industries such as automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on delivering innovative and energy-efficient solutions that enable customers to create more sustainable products.
Application
The NVMFS6B14NLWFT1G is a N-channel MOSFET used in various application areas, including power management, switching power supplies, DC-DC converters, and motor control. It's ideal for high-efficiency power circuits, load switching, and battery management systems due to its low on-resistance and fast switching capabilities.
Equivalent
The NVMFS6B14NLWFT1G is a N-channel MOSFET. Equivalent products include the NVMFS6B14NLW, NVMFS6B14, and other N-channel MOSFETs with similar voltage and current ratings (e.g., IRF3205, BSS123). Always verify the specifications, such as V_DS, I_D, R_DS(on), and package type, for compatibility in your specific application.
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