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NVMFS5C442NAFT1G
MOSFET N-CH 40V 29A/140A 5DFN
- メーカー
- Mfr。パート #NVMFS5C442NAFT1G
- パッケージ 8-PowerTDFN,5Leads
- データシート
- 在庫中4266
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 29A (Ta), 140A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.3mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2100 pF @ 25 V |
| PowerDissipation(Max) | 3.7W (Ta), 83W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
概要
Description
The NVMFS5C442NAFT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features low on-resistance and fast switching speeds, making it suitable for use in power management, DC-DC converters, and motor drivers. The device typically operates in low-voltage environments, with a maximum drain-source voltage (VDS) rating around 40V. Its compact packaging allows for efficient thermal dissipation and integration into various circuits.
Key specifications include a low threshold voltage, enabling it to switch on quickly with minimal gate drive voltage. The MOSFET is often utilized in automotive, industrial, and consumer electronics applications where reliability and performance are critical.
Overall, the NVMFS5C442NAFT1G is a versatile component that supports various applications requiring efficient power handling and control.
Key specifications include a low threshold voltage, enabling it to switch on quickly with minimal gate drive voltage. The MOSFET is often utilized in automotive, industrial, and consumer electronics applications where reliability and performance are critical.
Overall, the NVMFS5C442NAFT1G is a versatile component that supports various applications requiring efficient power handling and control.
Features
The NVMFS5C442NAFT1G is a N-channel MOSFET, designed for high-efficiency applications. Key features include:
- Voltage Rating: 40V maximum drain-source voltage (V_DS)
- Current Rating: Capable of handling continuous drain current up to 68A, making it suitable for power management applications.
- R_DS(on): Low on-resistance of 5.2 mΩ at V_GS = 10V, which minimizes conduction losses.
- Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2V, allowing for easy drive with low voltage logic.
- Package Type: Offered in a compact DPAK package for efficient thermal management and space-saving in designs.
- Applications: Ideal for DC-DC converters, motor drives, and other power switching applications due to its fast switching speed and low thermal resistance.
This MOSFET provides a combination of high efficiency, robustness, and versatility for modern electronic designs.
- Voltage Rating: 40V maximum drain-source voltage (V_DS)
- Current Rating: Capable of handling continuous drain current up to 68A, making it suitable for power management applications.
- R_DS(on): Low on-resistance of 5.2 mΩ at V_GS = 10V, which minimizes conduction losses.
- Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2V, allowing for easy drive with low voltage logic.
- Package Type: Offered in a compact DPAK package for efficient thermal management and space-saving in designs.
- Applications: Ideal for DC-DC converters, motor drives, and other power switching applications due to its fast switching speed and low thermal resistance.
This MOSFET provides a combination of high efficiency, robustness, and versatility for modern electronic designs.
Package
The NVMFS5C442NAFT1G is packaged in a Surface Mount Device (SMD) format, specifically a PowerPAK 1212-8 package. This package type is designed for compactness and efficient thermal management in electronic applications.
Pinout
The NVMFS5C442NAFT1G is a N-channel MOSFET featuring a total of 5 pins. Its primary functions include switching and amplification in various electronic circuits. Specifically, it is designed for high-efficiency power management applications, such as in DC-DC converters and power supplies.
The pins of the NVMFS5C442NAFT1G are typically configured as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the current flows out when the device is on.
3. Source (S) - The input terminal where the current flows in when the device is on.
4. Base (if applicable) - Depending on the specific configuration, this may refer to a connection point in certain applications.
5. Substrate (if applicable) - This connects to the device's internal structure for better thermal dissipation.
For specific applications and detailed specifications, refer to the manufacturer's datasheet.
The pins of the NVMFS5C442NAFT1G are typically configured as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the current flows out when the device is on.
3. Source (S) - The input terminal where the current flows in when the device is on.
4. Base (if applicable) - Depending on the specific configuration, this may refer to a connection point in certain applications.
5. Substrate (if applicable) - This connects to the device's internal structure for better thermal dissipation.
For specific applications and detailed specifications, refer to the manufacturer's datasheet.
Manufacturer
The NVMFS5C442NAFT1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global semiconductor supplier that provides a wide range of energy-efficient solutions, including power management, analog, logic, and discrete devices. The company is known for its focus on innovation and sustainability in the semiconductor industry, catering to various markets such as automotive, industrial, consumer electronics, and telecommunications. ON Semiconductor emphasizes the development of technologies that enhance the performance and efficiency of electronic systems, supporting the growing demand for advanced semiconductor products in modern applications.
Application
The NVMFS5C442NAFT1G is an N-channel MOSFET ideally suited for applications such as power management, DC-DC converters, motor drivers, and load switching in consumer electronics, automotive systems, and industrial equipment. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supply designs and renewable energy systems.
Equivalent
The NVMFS5C442NAFT1G is a N-channel MOSFET. Equivalent products include the BSS123, 2N7000, and BS170. For specific applications, check the datasheets for voltage, current ratings, and package compatibility to ensure proper performance in your circuit.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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