NVMFS5113PLWFT1G

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NVMFS5113PLWFT1G

MOSFET P-CH 60V 10A/64A 5DFN

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仕様

Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5113

概要

Description

NVMFS5113PLWFT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for applications requiring efficient power management and switching capabilities, such as in DC-DC converters, motor drives, and power supplies.
Key features include a low on-resistance (R_DS(on)) for reduced conduction losses, high-speed switching for improved efficiency, and a maximum drain-source voltage (V_DS) rating that supports a variety of voltage applications. The device typically comes in a compact surface-mount package, making it suitable for space-constrained designs.
Due to its robustness and efficiency, the NVMFS5113PLWFT1G is often utilized in consumer electronics, automotive systems, and industrial applications, where reliable performance is critical. When selecting this MOSFET, consider parameters such as gate threshold voltage, thermal resistance, and package type to ensure compatibility with your specific application requirements.

Features

The NVMFS5113PLWFT1G is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 30V.
2. Current Rating: The device supports continuous drain current (Id) of up to 12A, making it suitable for various power management tasks.
3. RDS(on): The on-resistance is low (approximately 10 mΩ at 10V), which helps reduce power loss and improve efficiency.
4. Gate Threshold Voltage (Vgs): It has a low threshold voltage, typically between 1V to 2.5V, enabling it to be driven effectively by low-voltage control signals.
5. Package Type: It comes in a compact SOT-223 package, ensuring space efficiency in circuit designs.
6. Fast Switching Speed: The MOSFET is optimized for fast switching applications, making it suitable for use in DC-DC converters, motor drivers, and other power management systems.
These features make the NVMFS5113PLWFT1G an excellent choice for designers seeking reliable and efficient components for power electronics applications.

Package

The NVMFS5113PLWFT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) packaged in a surface-mount configuration, specifically in a DFN (Dual Flat No-lead) package type. This design enables efficient thermal performance and space-saving on printed circuit boards.

Pinout

The NVMFS5113PLWFT1G is an N-channel MOSFET with a pin count of 8. It is designed for applications such as power management and switching.
Pin Functions:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Collects current; the output of the device.
3. Source (S): Supplies current; the input of the device.
4. Body Diode: Integrated intrinsic diode allowing current flow in reverse direction.
This component features low on-resistance and fast switching capabilities, making it suitable for various power applications. It is housed in a compact surface-mount package, facilitating easy integration into circuit designs.

Manufacturer

The NVMFS5113PLWFT1G is manufactured by Nexperia, a company that specializes in the production of discrete, logic, and MOSFET components. Nexperia was established in 2017 as a spin-off from NXP Semiconductors and focuses on high-volume manufacturing of semiconductor devices. The company is known for its expertise in providing high-quality, reliable products for the automotive, industrial, and consumer electronics markets. With a strong emphasis on efficiency and innovation, Nexperia aims to deliver solutions that meet the evolving demands of the electronics industry.

Application

The NVMFS5113PLWFT1G is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and load switches. Its features make it suitable for high-efficiency switching, low-voltage applications, and battery management systems in consumer electronics, automotive, and industrial sectors.

Equivalent

The NVMFS5113PLWFT1G is a Power MOSFET with similar equivalents including the NVMFS5113P, NTMFS5113P, and the IRF3205. When looking for alternatives, ensure to check specifications like voltage rating, current rating, and package type to ensure compatibility for your application.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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