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NVMFD5C470NLWFT1G
MOSFET 2N-CH 40V 11A 8DFN
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仕様
| Part Status | Discontinued at DigiKey |
| Base Product Number | NVMFD5 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 25V |
| Power - Max | 3W (Ta), 24W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
The NVMFD5C470NLWFT1G is a surface-mount Schottky diode designed for applications requiring high efficiency and low forward voltage drop. It features a maximum reverse voltage of 45V and a forward current rating of 5A, making it suitable for power management circuits, rectification, and over-voltage protection in various electronic devices.
This diode is particularly valued in switching power supplies, DC-DC converters, and LED drivers due to its fast switching capabilities and low leakage current. The Schottky design minimizes power loss, contributing to overall system efficiency.
The package type is typically a DFN (Dual Flat No-Lead), which allows for compact layouts and improved thermal performance. Key electrical characteristics include a low forward voltage drop, usually around 0.45V at 5A, and a reverse recovery time that is negligible, enhancing performance in high-frequency applications.
In summary, the NVMFD5C470NLWFT1G is an efficient, reliable Schottky diode ideal for various power applications, contributing to improved energy efficiency and compact designs in modern electronics.
This diode is particularly valued in switching power supplies, DC-DC converters, and LED drivers due to its fast switching capabilities and low leakage current. The Schottky design minimizes power loss, contributing to overall system efficiency.
The package type is typically a DFN (Dual Flat No-Lead), which allows for compact layouts and improved thermal performance. Key electrical characteristics include a low forward voltage drop, usually around 0.45V at 5A, and a reverse recovery time that is negligible, enhancing performance in high-frequency applications.
In summary, the NVMFD5C470NLWFT1G is an efficient, reliable Schottky diode ideal for various power applications, contributing to improved energy efficiency and compact designs in modern electronics.
Features
The NVMFD5C470NLWFT1G is a Schottky barrier rectifier with a voltage rating of 45V and a current rating of 5A. Key features include:
1. Low Forward Voltage Drop: This characteristic enhances efficiency, particularly in low-voltage applications.
2. Fast Switching Speed: Ideal for high-frequency applications, reducing switching losses.
3. Low Reverse Leakage Current: Minimizes power loss in reverse bias conditions.
4. Surface Mount Package: Designed in a compact SMC package, facilitating efficient PCB layout and saving space.
5. High Reliability: Built to withstand harsh conditions, making it suitable for various industrial applications.
6. Temperature Range: Operates efficiently across a wide temperature range, ensuring performance stability.
Overall, the NVMFD5C470NLWFT1G is well-suited for power supply, DC-DC converters, and other applications where efficiency and reliability are crucial.
1. Low Forward Voltage Drop: This characteristic enhances efficiency, particularly in low-voltage applications.
2. Fast Switching Speed: Ideal for high-frequency applications, reducing switching losses.
3. Low Reverse Leakage Current: Minimizes power loss in reverse bias conditions.
4. Surface Mount Package: Designed in a compact SMC package, facilitating efficient PCB layout and saving space.
5. High Reliability: Built to withstand harsh conditions, making it suitable for various industrial applications.
6. Temperature Range: Operates efficiently across a wide temperature range, ensuring performance stability.
Overall, the NVMFD5C470NLWFT1G is well-suited for power supply, DC-DC converters, and other applications where efficiency and reliability are crucial.
Package
The NVMFD5C470NLWFT1G is packaged in a SOT-23 form factor.
Pinout
The NVMFD5C470NLWFT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that features a total of 8 pins. Its primary function is to act as an electronic switch or amplifier in various applications, including power management and signal processing.
The key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 5A, and low on-resistance (R_DS(on)), which enhances its efficiency in power applications. It is designed for low-voltage applications and is suitable for use in DC-DC converters, power supplies, and other similar circuits.
The pin configuration typically includes gate, drain, and source connections, allowing it to control the flow of current between the drain and source when a voltage is applied to the gate. This functionality makes the NVMFD5C470NLWFT1G a versatile component in modern electronic designs.
The key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 5A, and low on-resistance (R_DS(on)), which enhances its efficiency in power applications. It is designed for low-voltage applications and is suitable for use in DC-DC converters, power supplies, and other similar circuits.
The pin configuration typically includes gate, drain, and source connections, allowing it to control the flow of current between the drain and source when a voltage is applied to the gate. This functionality makes the NVMFD5C470NLWFT1G a versatile component in modern electronic designs.
Manufacturer
The manufacturer of the NVMFD5C470NLWFT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and sells a wide range of innovative semiconductor solutions. The company focuses on power management, analog, sensors, logic, timing, memory, radio frequency, and discrete devices, serving various markets including automotive, industrial, communications, consumer, and computing. ON Semiconductor is known for its commitment to sustainability and energy-efficient products, making it a key player in the semiconductor industry.
Application
The NVMFD5C470NLWFT1G is a power MOSFET commonly used in various applications, including power management, DC-DC converters, and switching power supplies. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power devices in consumer electronics, automotive systems, industrial equipment, and renewable energy applications such as solar inverters.
Equivalent
The NVMFD5C470NLWFT1G is a 470V N-channel MOSFET. Equivalent products include the STP6NK70Z, IRF840, and MTP6N70E. Always check datasheets for specific parameters to ensure compatibility in your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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