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NVMFD5877NLWFT3G
MOSFET 2N-CH 60V 6A 8DFN
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- Mfr。パート #NVMFD5877NLWFT3G
- パッケージ
- データシート NVMFD5877NLWFT3G DataSheet
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仕様
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Power - Max | 3.2W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Base Product Number | NVMFD5877 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
概要
Description
The NVMFD5877NLWFT3G is a component part number typically associated with semiconductor devices, particularly MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). These components are used in electronic circuits for switching and amplifying electronic signals.
This specific part number indicates a MOSFET designed for specific voltage, current, and thermal characteristics, making it suitable for particular applications in power management and conversion. This device might feature attributes such as low on-resistance, fast switching speeds, or high power efficiency, depending on the manufacturer’s design specifications.
The NVMFD5877NLWFT3G is often packaged in a specific form factor to fit various electronic devices and can be used in applications ranging from consumer electronics to industrial machinery, where efficient power control and management are required. For detailed specifications, including electrical characteristics and thermal limits, the manufacturer's datasheet would provide comprehensive information.
This specific part number indicates a MOSFET designed for specific voltage, current, and thermal characteristics, making it suitable for particular applications in power management and conversion. This device might feature attributes such as low on-resistance, fast switching speeds, or high power efficiency, depending on the manufacturer’s design specifications.
The NVMFD5877NLWFT3G is often packaged in a specific form factor to fit various electronic devices and can be used in applications ranging from consumer electronics to industrial machinery, where efficient power control and management are required. For detailed specifications, including electrical characteristics and thermal limits, the manufacturer's datasheet would provide comprehensive information.
Features
The NVMFD5877NLWFT3G is a power MOSFET designed for high-efficiency switching applications. It typically features a low on-resistance, which helps minimize power loss and improve efficiency. This MOSFET is suitable for fast switching applications due to its optimized gate charge and lower capacitance, which allow for quick transitions between the on and off states. The device often comes in a small package, contributing to space-saving designs in compact electronic systems.
Key specifications usually include a high drain-source voltage (V_DS) rating, which defines the maximum voltage the MOSFET can handle between drain and source terminals. Additionally, it often supports high current capabilities, making it suitable for various power applications. The NVMFD5877NLWFT3G might also feature thermal resistance specifications to ensure effective heat dissipation during operation.
Please refer to the specific datasheet or manufacturer’s documentation for exact features and specifications, as these can vary slightly depending on production batches or updates.
Key specifications usually include a high drain-source voltage (V_DS) rating, which defines the maximum voltage the MOSFET can handle between drain and source terminals. Additionally, it often supports high current capabilities, making it suitable for various power applications. The NVMFD5877NLWFT3G might also feature thermal resistance specifications to ensure effective heat dissipation during operation.
Please refer to the specific datasheet or manufacturer’s documentation for exact features and specifications, as these can vary slightly depending on production batches or updates.
Package
The NVMFD5877NLWFT3G is a MOSFET package from ON Semiconductor, featuring a compact, surface-mount, PowerPAK SO-8 package type. It is designed for efficient power management in electronic applications, offering low on-resistance and high current capability.
Pinout
The NVMFD5877NLWFT3G is a MOSFET transistor produced by ON Semiconductor. This device features a 3-pin configuration common in MOSFETs. The pins serve the following functions:
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, you can control the current flow between the source and drain.
2. Drain (D): This pin is the terminal through which the main current flows from the drain to the source when the MOSFET is on (i.e., conducting).
3. Source (S): This pin acts as the return path for the current flowing through the MOSFET.
Typically, these pins are arranged in a standard TO-252 package, providing a compact and efficient form factor for various applications. This MOSFET is commonly used in power management applications due to its efficiency and reliability. For precise specifications, referring to the datasheet is recommended.
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, you can control the current flow between the source and drain.
2. Drain (D): This pin is the terminal through which the main current flows from the drain to the source when the MOSFET is on (i.e., conducting).
3. Source (S): This pin acts as the return path for the current flowing through the MOSFET.
Typically, these pins are arranged in a standard TO-252 package, providing a compact and efficient form factor for various applications. This MOSFET is commonly used in power management applications due to its efficiency and reliability. For precise specifications, referring to the datasheet is recommended.
Manufacturer
The NVMFD5877NLWFT3G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a semiconductor manufacturing company that specializes in providing a broad range of products such as power and signal management, logic, discrete, and custom devices. The company focuses on energy-efficient innovations, providing solutions for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. Onsemi is known for its efforts in driving technology advancements that promote sustainable energy and efficient use of resources.
Application
The NVMFD5877NLWFT3G is a MOSFET designed for power management applications. It is typically used in areas such as DC-DC converters, motor drives, power supplies, and load switches. Its low on-resistance and high efficiency make it suitable for portable and battery-operated devices, as well as automotive and industrial applications where efficient power control is critical.
Equivalent
The NVMFD5877NLWFT3G is a MOSFET designed for power management. Equivalent products typically have similar voltage and current ratings, package types, and performance characteristics. Alternatives might include:
1. Infineon BSC100N06LS3: Similar N-channel MOSFET.
2. Vishay SiRA14DP: Comparable performance and specifications.
3. STMicroelectronics STL125N6F7: Similar in package and ratings.
Always verify the specifications and design requirements before substituting components.
1. Infineon BSC100N06LS3: Similar N-channel MOSFET.
2. Vishay SiRA14DP: Comparable performance and specifications.
3. STMicroelectronics STL125N6F7: Similar in package and ratings.
Always verify the specifications and design requirements before substituting components.
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