NTZS3151PT1G

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NTZS3151PT1G

MOSFET P-CH 20V 860MA SOT563

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仕様

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 860mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 150mOhm @ 950mA, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 5.6 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 458 pF @ 16 V
PowerDissipation(Max) 170mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-563

概要

Description

NTZS3151PT1G is a type of Zener diode used for voltage regulation and protection in electronic circuits. Zener diodes allow current to flow in the reverse direction when a specific breakdown voltage is reached, making them ideal for maintaining a stable output voltage. The "NTZ" prefix indicates its family and specifications, while "3151" refers to the specific model, and "PT1G" typically denotes packaging and configuration details.
These diodes are commonly used in applications such as voltage reference, surge suppression, and as clamping devices in various electronic systems. They provide a reliable means of ensuring that voltage levels remain within desired limits, thus protecting sensitive components from over-voltage conditions.
Key specifications to note include their breakdown voltage, maximum power dissipation, and temperature coefficient, which are critical for ensuring optimal performance in intended applications. The NTZS3151PT1G is typically housed in a surface-mount package, facilitating integration into modern circuit designs.

Features

The NTZS3151PT1G is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 51A, allowing it to handle significant power levels.
3. Low R_DS(on): The device features a low on-resistance (R_DS(on)) of approximately 5.5 mΩ at 10V gate drive, which reduces conduction losses and improves efficiency.
4. Fast Switching Speed: The MOSFET offers fast switching capabilities, making it ideal for high-speed applications.
5. Thermal Performance: It has a thermal resistance (RθJA) that enables effective heat dissipation, enhancing reliability under load.
6. Package: Housed in a TO-220 package, it provides ease of heat sinking and mounting in various circuits.
Overall, the NTZS3151PT1G is suitable for applications such as power supplies, motor drives, and DC-DC converters.

Package

The NTZS3151PT1G is packaged in a SOT-23 form factor. This surface-mount device package is commonly used for small signal transistors and offers a compact footprint suitable for various electronic applications.

Pinout

The NTZS3151PT1G is a N-channel MOSFET with a total of 6 pins. Its primary function is to act as a switch or amplifier in electronic circuits. The key specifications include:
- Pin Count: 6
- Pin Functions:
1. Gate (G): Controls the MOSFET's on/off states.
2. Drain (D): The terminal through which current flows out when the MOSFET is turned on.
3. Source (S): The terminal through which current flows into the MOSFET when it is conducting.
The device is commonly used in applications like power management, motor control, and other switching applications due to its low on-resistance and fast switching capabilities. It can handle significant voltages and currents, making it suitable for various power applications.

Manufacturer

The NTZS3151PT1G is manufactured by ON Semiconductor, a global company that specializes in semiconductor solutions. ON Semiconductor designs and produces a wide range of products including integrated circuits, discrete components, and sensors for various applications such as automotive, industrial, and consumer electronics. The company focuses on energy-efficient innovations and is known for its commitment to sustainability in the semiconductor industry.

Application

The NTZS3151PT1G is a low-voltage N-channel MOSFET primarily used in applications such as power management, battery management systems, motor drivers, and DC-DC converters. Its low on-resistance and fast switching capabilities make it suitable for efficient power switching in consumer electronics, automotive systems, and industrial controls.

Equivalent

The NTZS3151PT1G is a N-channel MOSFET with low RDS(on) and high-speed switching capabilities. Equivalent products include the IRLZ44N, AO3400, and BSS138. Always check specific datasheets for exact specifications and performance characteristics to ensure compatibility in your application.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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