NTR5198NLT1G

画像は参照用のみです。

NTR5198NLT1G

MOSFET N-CH 60V 1.7A SOT23-3

  • メーカー
  • Mfr。パート #NTR5198NLT1G
  • パッケージ SOT23-3
  • データシート
  • 在庫中6047

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 1.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 155mOhm @ 1A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 2.8 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 182 pF @ 25 V
PowerDissipation(Max) 900mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

概要

Description

The NTR5198NLT1G is a high-performance N-channel MOSFET designed for various power management applications. It features a low R_DS(on), which minimizes conduction losses, making it suitable for high-efficiency power supplies and switching applications. With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of up to 50A, it's ideal for use in load switches, DC-DC converters, and motor control circuits.
The device is housed in a compact SO-8 package, facilitating efficient thermal management and PCB space savings. Its fast switching speed enhances the overall system performance, while its robust construction ensures reliability in demanding environments.
The NTR5198NLT1G is particularly valued in consumer electronics, automotive, and industrial applications, where efficiency and compact design are critical. For design considerations, consult the datasheet for detailed electrical characteristics and recommended operating conditions.

Features

The NTR5198NLT1G is a dual N-channel MOSFET designed for various applications including load switching and power management. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 49A, allowing it to drive substantial loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 9.5 mΩ at a gate-source voltage (V_GS) of 10V, which enhances efficiency by minimizing power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V to 4V, enabling it to be driven by lower voltage logic levels.
5. Package: Available in a compact SO-8 package, making it suitable for space-constrained designs.
6. Thermal Performance: Designed with good thermal conductivity to manage heat dissipation effectively.
These features make the NTR5198NLT1G ideal for high-efficiency, high-performance applications in consumer electronics, automotive, and industrial fields.

Package

The NTR5198NLT1G is available in the SOT-23 package type. This compact surface-mount package is commonly used for various electronic components due to its small size and ease of integration into circuits.

Pinout

The NTR5198NLT1G is a dual N-channel MOSFET in a TSOP-6 package, featuring a total of 6 pins. Each of the two N-channel MOSFETs can be used for various switching applications. The primary function of the NTR5198NLT1G is to act as a low-side switch in power management circuits, enabling control over the flow of electricity to a load. Its low on-resistance (R_DS(on)) ensures efficient operation with minimal power loss. The device is commonly used in applications such as power management, load switching, and battery management systems.

Manufacturer

The NTR5198NLT1G is manufactured by ON Semiconductor, a global supplier of semiconductor components. ON Semiconductor specializes in a wide range of products, including power management, analog, logic, and discrete devices. The company serves various markets, including automotive, industrial, communications, and consumer electronics. Founded through the merger of multiple semiconductor companies, ON Semiconductor is known for its focus on energy-efficient solutions and innovative technologies. Its products are integral to various electronic applications, making it a key player in the semiconductor industry.

Application

The NTR5198NLT1G is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include load switching, DC-DC converters, power supply circuits, and motor control systems. It is suitable for use in consumer electronics, automotive systems, and industrial automation due to its efficiency, fast switching capabilities, and thermal performance.

Equivalent

The NTR5198NLT1G is a dual N-channel MOSFET commonly used in power management applications. Equivalent products include the BSS138, SI2302, and IRF3708. However, it’s essential to check specific parameters like voltage, current ratings, and package type to ensure compatibility in your application. Always refer to datasheets for detailed specifications.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100%前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送