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NTR4101PT1G
MOSFET P-CH 20V 1.8A SOT23-3
- メーカー
- Mfr。パート #NTR4101PT1G
- パッケージ SOT23-3
- データシート
- 在庫中5392
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 1.8A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 85mOhm @ 1.6A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 675 pF @ 10 V |
| PowerDissipation(Max) | 420mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
概要
Description
NTR4101PT1G is a specific part number for a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Nexperia. This device is designed for high-performance switching applications, typically used in power management, automotive, and industrial circuits. With its low on-resistance and fast switching capabilities, the NTR4101PT1G is suitable for efficiently controlling power in various electronic systems.
Key features often include a maximum drain-source voltage (V_DS) rating, low gate threshold voltage, and high thermal performance, making it ideal for applications such as power supplies, motor drivers, and inverters. The device is packaged in a surface-mount format, which allows for compact designs and ease of integration into modern electronic assemblies.
Overall, the NTR4101PT1G is a versatile and reliable component for engineers looking to enhance the efficiency and performance of their electronic designs. Always refer to the datasheet for detailed specifications and operating conditions.
Key features often include a maximum drain-source voltage (V_DS) rating, low gate threshold voltage, and high thermal performance, making it ideal for applications such as power supplies, motor drivers, and inverters. The device is packaged in a surface-mount format, which allows for compact designs and ease of integration into modern electronic assemblies.
Overall, the NTR4101PT1G is a versatile and reliable component for engineers looking to enhance the efficiency and performance of their electronic designs. Always refer to the datasheet for detailed specifications and operating conditions.
Features
The NTR4101PT1G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
- Voltage Rating: It supports a maximum drain-source voltage (VDS) of 30V.
- Current Capacity: The device can handle continuous drain currents up to 55A, making it suitable for high-power applications.
- Low ON Resistance: With a typical RDS(on) of 12 mΩ at a gate-source voltage (VGS) of 10V, it ensures efficient operation with minimal power loss.
- Fast Switching: The MOSFET is designed for rapid switching, which is advantageous in high-frequency applications.
- Thermal Performance: It has a high thermal stability, allowing it to operate efficiently under varying temperatures.
- Package Type: The NTR4101PT1G is housed in a TO-220 package, facilitating easy heatsinking and assembly in many designs.
These features make the NTR4101PT1G suitable for applications in power supplies, motor drives, and other electronic circuits requiring efficient power management.
- Voltage Rating: It supports a maximum drain-source voltage (VDS) of 30V.
- Current Capacity: The device can handle continuous drain currents up to 55A, making it suitable for high-power applications.
- Low ON Resistance: With a typical RDS(on) of 12 mΩ at a gate-source voltage (VGS) of 10V, it ensures efficient operation with minimal power loss.
- Fast Switching: The MOSFET is designed for rapid switching, which is advantageous in high-frequency applications.
- Thermal Performance: It has a high thermal stability, allowing it to operate efficiently under varying temperatures.
- Package Type: The NTR4101PT1G is housed in a TO-220 package, facilitating easy heatsinking and assembly in many designs.
These features make the NTR4101PT1G suitable for applications in power supplies, motor drives, and other electronic circuits requiring efficient power management.
Package
The NTR4101PT1G is packaged in a SOIC-8 (Small Outline Integrated Circuit) format. This surface-mount package type features eight pins and is commonly used in various electronic applications for its compact size and ease of handling.
Pinout
The NTR4101PT1G is a N-channel MOSFET with a pin count of 4. It features a low on-resistance and is designed for various switching applications. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal that connects to the ground or the lower potential side of the load.
4. Substrate (B) - Typically connected to the source, used for internal biasing.
This device offers a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 9.2A, making it suitable for power management and switching applications in various electronic circuits.
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal that connects to the ground or the lower potential side of the load.
4. Substrate (B) - Typically connected to the source, used for internal biasing.
This device offers a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 9.2A, making it suitable for power management and switching applications in various electronic circuits.
Manufacturer
The NTR4101PT1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global company that specializes in semiconductor solutions, providing a wide range of products including power management, analog, logic, timing, connectivity, and imaging devices. The company serves various industries such as automotive, industrial, consumer electronics, and telecommunications. Established in 1999, ON Semiconductor focuses on energy-efficient innovations and has a strong commitment to sustainability and reducing environmental impact.
Application
The NTR4101PT1G is a low on-resistance N-channel MOSFET commonly used in applications such as power management, load switching, and motor control. Its features make it suitable for consumer electronics, computer peripherals, power supplies, and automotive systems, where efficient switching and thermal performance are essential.
Equivalent
The NTR4101PT1G is a N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and STP16NF06. Ensure to check specifications like voltage, current ratings, and package type to confirm compatibility for your specific application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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