NTMFS4C022NT1G

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NTMFS4C022NT1G

MOSFET N-CH 30V 30A/136A 5DFN

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  • Mfr。パート #NTMFS4C022NT1G
  • パッケージ SO-8FL
  • データシート
  • 在庫中5241

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 30A (Ta), 136A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.7mOhm @ 30A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 45.2 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3071 pF @ 15 V
PowerDissipation(Max) 3.1W (Ta), 64W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

概要

Description

The NTMFS4C022NT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features a low on-resistance, which minimizes power loss and improves efficiency in switching applications, making it suitable for power management in various electronic devices.
Key specifications include a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) rating of up to 4.5A, depending on the thermal conditions. Its fast switching speeds make it ideal for applications such as DC-DC converters, motor drivers, and other power electronics.
The device is housed in a compact surface-mount package (SO-8), facilitating easy integration into modern circuit designs. Its robust performance and reliability make the NTMFS4C022NT1G a popular choice among engineers looking to optimize efficiency and thermal management in their designs.

Features

The NTMFS4C022NT1G is an N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 4.3A, enabling efficient power handling.
3. Low On-Resistance: The on-resistance (R_DS(on)) is low, typically around 27 mΩ at V_GS = 10V, which helps reduce conduction losses.
4. Fast Switching Speed: Designed for quick switching times, enhancing performance in fast PWM applications.
5. Thermal Performance: Features a high thermal resistance rating (RθJA), allowing better heat dissipation and reliability.
6. Package: Available in a compact SO-8 package, facilitating easy integration into various circuit designs.
This MOSFET is commonly used in power supplies, motor drivers, and load switching applications due to its efficient performance and robust characteristics.

Package

The NTMFS4C022NT1G is packaged in a DPAK (TO-252) package type. This package is designed for surface mounting and provides good thermal performance for power applications.

Pinout

The NTMFS4C022NT1G is an N-channel MOSFET with a total of 8 pins. Its primary function is to serve as a high-efficiency switch for power management applications, such as in DC-DC converters, motor drivers, and load switching.
The pin configuration includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The input terminal that connects to ground in low-side switching.
The device is designed for low on-resistance and high-speed switching, making it suitable for various power-related applications. The NTMFS4C022NT1G is characterized by low gate threshold voltage, fast switching times, and high current capacity, enhancing its performance in power management systems.

Manufacturer

The NTMFS4C022NT1G is manufactured by Nexperia, a global company specializing in semiconductor devices. Nexperia focuses on producing discrete, logic, and MOSFET components, serving various markets including automotive, industrial, and consumer electronics. The company originated from the NXP Semiconductors' standard products division and became an independent entity in 2017. Nexperia is known for its commitment to high-quality manufacturing and efficiency, emphasizing product reliability and performance.

Application

The NTMFS4C022NT1G is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor control. Its low on-resistance and high-speed switching capabilities make it suitable for applications in battery management systems, electric vehicles, and renewable energy systems. Additionally, it can be employed in general-purpose switching applications and load management solutions.

Equivalent

The NTMFS4C022NT1G is a N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and FDS6910. However, always check specific parameters like V_DS, I_D, R_DS(on), and package type to ensure compatibility for your application.

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UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

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