画像は参照用のみです。
NTHD4102PT1G
MOSFET 2P-CH 20V 2.9A CHIPFET
- メーカー
- Mfr。パート #NTHD4102PT1G
- パッケージ 8-SMD, Flat Lead
- データシート
- 在庫中2438
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 2.9A |
| RdsOn(Max)@IdVgs | 80mOhm @ 2.9A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.6nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 750pF @ 16V |
| Power-Max | 1.1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SMD, Flat Lead |
概要
Description
NTHD4102PT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features low on-resistance and fast switching speeds, which make it suitable for use in various electronic circuits, including switching power supplies, motor drivers, and DC-DC converters. The device typically supports high current capacity and can handle a wide range of voltages, ensuring efficient power conversion and thermal management.
NTHD4102PT1G comes in a compact package, allowing for space-saving designs in modern electronics. Its characteristics, such as low gate threshold voltage and high input impedance, contribute to enhanced efficiency and performance in applications ranging from consumer electronics to industrial systems.
When integrating NTHD4102PT1G into designs, considerations include thermal management, gate drive requirements, and the load conditions to optimize performance and reliability.
NTHD4102PT1G comes in a compact package, allowing for space-saving designs in modern electronics. Its characteristics, such as low gate threshold voltage and high input impedance, contribute to enhanced efficiency and performance in applications ranging from consumer electronics to industrial systems.
When integrating NTHD4102PT1G into designs, considerations include thermal management, gate drive requirements, and the load conditions to optimize performance and reliability.
Features
The NTHD4102PT1G is a high-performance, low on-resistance N-channel MOSFET designed for a variety of applications, including power management and switching. Key features include:
1. Low R_DS(on): Provides efficient performance with minimal power loss, enhancing the overall efficiency of the circuit.
2. High Speed: Fast switching capabilities make it suitable for high-frequency applications.
3. Low Gate Charge (Q_g): Reduces driving power requirements, allowing for lower energy consumption in control circuits.
4. High Voltage Rating: Capable of handling high voltages, making it versatile for different applications.
5. Robust Package: Available in a surface-mount package, optimized for space-saving designs.
These features make the NTHD4102PT1G ideal for use in DC-DC converters, load switching, and other power management applications.
1. Low R_DS(on): Provides efficient performance with minimal power loss, enhancing the overall efficiency of the circuit.
2. High Speed: Fast switching capabilities make it suitable for high-frequency applications.
3. Low Gate Charge (Q_g): Reduces driving power requirements, allowing for lower energy consumption in control circuits.
4. High Voltage Rating: Capable of handling high voltages, making it versatile for different applications.
5. Robust Package: Available in a surface-mount package, optimized for space-saving designs.
These features make the NTHD4102PT1G ideal for use in DC-DC converters, load switching, and other power management applications.
Package
The NTHD4102PT1G is packaged in a SOT-23-5 (Small Outline Transistor) format. This surface-mount package is designed for compact applications, providing efficient thermal performance and space-saving benefits.
Pinout
The NTHD4102PT1G is a dual N-channel MOSFET housed in a 6-pin SC-70 package. It features a total of 6 pins, which are used for the following functions:
1. Gate 1 (G1) - Controls the operation of the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first MOSFET.
3. Source 1 (S1) - The source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the operation of the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second MOSFET.
6. Source 2 (S2) - The source terminal for the second MOSFET.
This component is typically used in applications requiring low on-resistance and fast switching speeds, such as power management and switching circuits.
1. Gate 1 (G1) - Controls the operation of the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first MOSFET.
3. Source 1 (S1) - The source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the operation of the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second MOSFET.
6. Source 2 (S2) - The source terminal for the second MOSFET.
This component is typically used in applications requiring low on-resistance and fast switching speeds, such as power management and switching circuits.
Manufacturer
The manufacturer of the NTHD4102PT1G is ON Semiconductor. ON Semiconductor is a global semiconductor supplier that provides a wide range of products, including power management, analog, and digital components. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor focuses on energy-efficient solutions and has a strong emphasis on innovation and sustainability in its product offerings.
Application
The NTHD4102PT1G is a high-speed, low-threshold N-channel MOSFET commonly used in applications such as power management, load switching, DC-DC converters, and motor control. Its low on-resistance and fast switching capabilities make it suitable for portable devices, battery-operated systems, and power supplies in consumer electronics. Additionally, it can be utilized in automotive applications for efficient power distribution and control.
Equivalent
The NTHD4102PT1G chip is a dual N-channel MOSFET. Equivalent products include:
1. BSS138
2. 2N7000
3. BS170
4. NTD5865N
Ensure to check the specifications, such as voltage, current ratings, and package type, to confirm compatibility for your specific application.
1. BSS138
2. 2N7000
3. BS170
4. NTD5865N
Ensure to check the specifications, such as voltage, current ratings, and package type, to confirm compatibility for your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX29F400CBTI-70G
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V2033FM1I
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX29LV160DTTI-70G
Macronix