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NTH4L040N120SC1
SICFET N-CH 1200V 58A TO247-4
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- Mfr。パート #NTH4L040N120SC1
- パッケージ
- データシート NTH4L040N120SC1 DataSheet
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仕様
| Supplier | onsemi |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 58A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 20V |
| RdsOn(Max)@IdVgs | 56mOhm @ 35A, 20V |
| Vgs(th)(Max)@Id | 4.3V @ 10mA |
| GateCharge(Qg)(Max)@Vgs | 106 nC @ 20 V |
| Vgs(Max) | +25V, -15V |
| InputCapacitance(Ciss)(Max)@Vds | 1762 pF @ 800 V |
| PowerDissipation(Max) | 319W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4L |
概要
Description
The NTH4L040N120SC1 is a high-performance N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching capabilities, making it suitable for efficient power conversion, switching applications, and high-frequency circuits. With a voltage rating of 120V and a current rating up to 40A, it is ideal for use in various applications such as DC-DC converters, motor drives, and industrial power supplies.
Key characteristics include a low gate threshold voltage, excellent thermal performance, and a robust package design that enhances reliability under operational stress. The MOSFET is typically housed in a TO-220 package, which facilitates efficient heat dissipation, ensuring better performance in demanding environments. Its low gate charge enables quick turn-on and turn-off cycles, improving overall system efficiency.
Engineers often select the NTH4L040N120SC1 for applications requiring high efficiency, reliability, and compact design. It is important to consult the specific datasheet for detailed electrical characteristics and thermal management guidelines.
Key characteristics include a low gate threshold voltage, excellent thermal performance, and a robust package design that enhances reliability under operational stress. The MOSFET is typically housed in a TO-220 package, which facilitates efficient heat dissipation, ensuring better performance in demanding environments. Its low gate charge enables quick turn-on and turn-off cycles, improving overall system efficiency.
Engineers often select the NTH4L040N120SC1 for applications requiring high efficiency, reliability, and compact design. It is important to consult the specific datasheet for detailed electrical characteristics and thermal management guidelines.
Features
The NTH4L040N120SC1 is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: Rated for a drain-source voltage (V_DS) of 120V, enabling use in high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 40A, suitable for demanding tasks.
3. On-Resistance: Low on-resistance (R_DS(on)), typically around 0.04 ohms, which helps to minimize power loss and improve efficiency.
4. Gate Threshold Voltage: Optimized gate threshold voltage (V_GS(th)) for efficient drive control.
5. Fast Switching: Designed for fast switching speeds, making it ideal for switching applications in power supplies and motor drives.
6. Package: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
7. Thermal Resistance: Low thermal resistance enhances performance under thermal stress.
These features make the NTH4L040N120SC1 suitable for various applications, including power converters, automotive systems, and industrial equipment.
1. Voltage Rating: Rated for a drain-source voltage (V_DS) of 120V, enabling use in high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 40A, suitable for demanding tasks.
3. On-Resistance: Low on-resistance (R_DS(on)), typically around 0.04 ohms, which helps to minimize power loss and improve efficiency.
4. Gate Threshold Voltage: Optimized gate threshold voltage (V_GS(th)) for efficient drive control.
5. Fast Switching: Designed for fast switching speeds, making it ideal for switching applications in power supplies and motor drives.
6. Package: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
7. Thermal Resistance: Low thermal resistance enhances performance under thermal stress.
These features make the NTH4L040N120SC1 suitable for various applications, including power converters, automotive systems, and industrial equipment.
Package
The NTH4L040N120SC1 is packaged in a DPAK (TO-252) package type, which is a surface-mount package designed for high power applications.
Pinout
The NTH4L040N120SC1 is an N-channel MOSFET designed for high-efficiency power applications. It features a pin count of 8 pins.
The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative voltage.
4. Body Diode - Integrated diode between Source and Drain for reverse current protection.
The remaining pins are used for mechanical mounting and thermal dissipation, ensuring reliability during operation. The device is typically used in power management, switching applications, and motor control.
The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative voltage.
4. Body Diode - Integrated diode between Source and Drain for reverse current protection.
The remaining pins are used for mechanical mounting and thermal dissipation, ensuring reliability during operation. The device is typically used in power management, switching applications, and motor control.
Manufacturer
The NTH4L040N120SC1 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in discrete, logic, and MOSFET components, providing a wide range of products used in various applications, including automotive, industrial, and consumer electronics. The company was formed from the divestment of NXP Semiconductors' standard products division and is known for its focus on efficiency, performance, and reliability in its semiconductor solutions.
Application
The NTH4L040N120SC1 is a high-performance N-channel MOSFET used primarily in applications such as power management, DC-DC converters, motor drives, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it ideal for efficient power conversion and thermal management in various electronic devices, including automotive, industrial, and consumer electronics.
Equivalent
The NTH4L040N120SC1 is an N-channel MOSFET. Equivalent products include the STP40NF120, IRF840, and FQP40N120. Ensure to check specifications like voltage, current rating, and package type for compatibility. Always refer to the manufacturer's datasheet for precise comparisons.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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