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NTH4L040N120M3S
SILICON CARBIDE (SIC) MOSFET ELI
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- Mfr。パート #NTH4L040N120M3S
- パッケージ
- データシート NTH4L040N120M3S DataSheet
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仕様
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 800 V |
| Power Dissipation (Max) | 231W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
概要
Description
The NTH4L040N120M3S is a power MOSFET designed for high-efficiency applications, particularly in power conversion and management systems. It features a high breakdown voltage of 120V, a maximum drain current of 40A, and a low on-resistance, enabling reduced power losses during operation.
This MOSFET is often utilized in switch-mode power supplies, motor drives, and automotive applications due to its excellent thermal performance and fast switching capabilities. The NTH4L040N120M3S typically comes in a TO-220 or similar package, which aids in heat dissipation.
Key specifications include low gate charge, high-speed switching, and robust avalanche ratings, making it suitable for various electronic circuits requiring efficient power handling. Its design helps enhance system reliability and efficiency, contributing to overall performance improvements in applications such as renewable energy systems and electric vehicles.
Understanding its electrical characteristics and thermal management is crucial for optimal integration into electronic designs.
This MOSFET is often utilized in switch-mode power supplies, motor drives, and automotive applications due to its excellent thermal performance and fast switching capabilities. The NTH4L040N120M3S typically comes in a TO-220 or similar package, which aids in heat dissipation.
Key specifications include low gate charge, high-speed switching, and robust avalanche ratings, making it suitable for various electronic circuits requiring efficient power handling. Its design helps enhance system reliability and efficiency, contributing to overall performance improvements in applications such as renewable energy systems and electric vehicles.
Understanding its electrical characteristics and thermal management is crucial for optimal integration into electronic designs.
Features
The NTH4L040N120M3S is a high-performance N-channel MOSFET designed for a range of applications, including power management and switching. Key features include:
1. Voltage Rating: Capable of withstanding a drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: Supports a continuous drain current (I_D) of up to 40A, allowing for significant load handling.
3. R_DS(on): Low on-resistance (typically around 0.04Ω), which minimizes conduction losses and improves efficiency.
4. Fast Switching: Designed for rapid switching capabilities, enhancing performance in switching power supplies and converters.
5. Package Type: Available in a TO-247 package, which aids in heat dissipation and provides robust thermal management.
6. Thermal Resistance: Low thermal resistance ensures efficient heat transfer, contributing to reliability in various operating conditions.
7. Applications: Suitable for automotive, industrial, and consumer electronics applications, particularly in DC-DC converters and motor drives.
Overall, the NTH4L040N120M3S is a versatile and efficient MOSFET ideal for demanding power applications.
1. Voltage Rating: Capable of withstanding a drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: Supports a continuous drain current (I_D) of up to 40A, allowing for significant load handling.
3. R_DS(on): Low on-resistance (typically around 0.04Ω), which minimizes conduction losses and improves efficiency.
4. Fast Switching: Designed for rapid switching capabilities, enhancing performance in switching power supplies and converters.
5. Package Type: Available in a TO-247 package, which aids in heat dissipation and provides robust thermal management.
6. Thermal Resistance: Low thermal resistance ensures efficient heat transfer, contributing to reliability in various operating conditions.
7. Applications: Suitable for automotive, industrial, and consumer electronics applications, particularly in DC-DC converters and motor drives.
Overall, the NTH4L040N120M3S is a versatile and efficient MOSFET ideal for demanding power applications.
Package
The NTH4L040N120M3S is housed in a TO-220 package type, which is designed for efficient heat dissipation and is commonly used in power applications.
Pinout
The NTH4L040N120M3S is a power MOSFET with a total of 8 pins. Its primary functions include switching and amplification in power management applications. Specifically, it is designed for high-efficiency and high-performance applications such as DC-DC converters, power supply circuits, and motor drivers.
The pin configuration is as follows:
1. Gate – Controls the MOSFET operation.
2. Drain – The output terminal where current flows out.
3. Source – The terminal through which current enters the MOSFET.
The device is designed for low on-resistance (RDS(on)) and high-speed switching capabilities, making it suitable for various power applications. Always refer to the manufacturer’s datasheet for detailed specifications and operational guidelines.
The pin configuration is as follows:
1. Gate – Controls the MOSFET operation.
2. Drain – The output terminal where current flows out.
3. Source – The terminal through which current enters the MOSFET.
The device is designed for low on-resistance (RDS(on)) and high-speed switching capabilities, making it suitable for various power applications. Always refer to the manufacturer’s datasheet for detailed specifications and operational guidelines.
Manufacturer
The NTH4L040N120M3S is manufactured by ON Semiconductor, a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components. Founded in 1999, ON Semiconductor focuses on providing innovative solutions in areas such as power management, analog, sensor, logic, and discrete components. The company serves various industries, including automotive, industrial, consumer electronics, and communications. ON Semiconductor is known for its commitment to energy efficiency and sustainable practices, aiming to deliver high-performance products that meet the evolving needs of its customers.
Application
The NTH4L040N120M3S is a high-performance MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor drives, power supplies, and industrial automation. It is suitable for applications requiring high efficiency and fast switching, such as renewable energy systems, electric vehicles, and consumer electronics.
Equivalent
The NTH4L040N120M3S is a N-channel MOSFET. Equivalent products include the IRF3205, STP40NF20, and BSC100N04. Always verify specifications such as voltage, current ratings, and thermal performance to ensure compatibility.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
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