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NTD24N06T4G
MOSFET N-CH 60V 24A DPAK
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- Mfr。パート #NTD24N06T4G
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- データシート NTD24N06T4G DataSheet
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仕様
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
| Power Dissipation (Max) | 1.36W (Ta), 62.5W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | NTD24 |
概要
Description
The NTD24N06T4G is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is manufactured by ON Semiconductor and is typically used in power management circuits, DC-DC converters, and motor control applications.
Key features of the NTD24N06T4G include:
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of approximately 24A at 25°C.
2. R_DS(on): The device offers a low on-state resistance, typically around 35 mΩ, which contributes to higher efficiency by reducing conduction losses.
3. Package: It is commonly available in a DPAK (TO-252) package, which is suitable for surface mount technology (SMT) and provides good thermal performance.
4. Applications: Due to its fast switching speed and high efficiency, it is often used in automotive, industrial, and consumer electronics for applications requiring efficient power delivery and control.
When selecting this MOSFET, consider factors like thermal management, gate drive requirements, and switching frequency to ensure optimal performance in your application.
Key features of the NTD24N06T4G include:
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of approximately 24A at 25°C.
2. R_DS(on): The device offers a low on-state resistance, typically around 35 mΩ, which contributes to higher efficiency by reducing conduction losses.
3. Package: It is commonly available in a DPAK (TO-252) package, which is suitable for surface mount technology (SMT) and provides good thermal performance.
4. Applications: Due to its fast switching speed and high efficiency, it is often used in automotive, industrial, and consumer electronics for applications requiring efficient power delivery and control.
When selecting this MOSFET, consider factors like thermal management, gate drive requirements, and switching frequency to ensure optimal performance in your application.
Features
The NTD24N06T4G is an N-channel MOSFET designed for various electronic applications. Here are its key features:
1. Voltage Rating: It has a drain-to-source voltage (V_DS) rating of 60V, which makes it suitable for medium voltage applications.
2. Current Capacity: The continuous drain current (I_D) is 24A, allowing it to handle significant current levels without overheating.
3. R_DS(on): The on-state resistance (R_DS(on)) is typically low, facilitating efficient operation with minimal power loss.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) that allows it to operate effectively with standard logic level signals.
5. Package Type: It is available in a TO-252 (DPAK) package, which is compact and provides good thermal performance.
6. Enhanced Performance: The device is constructed to provide fast switching speeds and high energy efficiency.
7. Applications: It is commonly used in power management, motor control, and switching applications due to its robust performance.
These attributes make the NTD24N06T4G a versatile choice for designers in need of a reliable and efficient MOSFET for their electronic designs.
1. Voltage Rating: It has a drain-to-source voltage (V_DS) rating of 60V, which makes it suitable for medium voltage applications.
2. Current Capacity: The continuous drain current (I_D) is 24A, allowing it to handle significant current levels without overheating.
3. R_DS(on): The on-state resistance (R_DS(on)) is typically low, facilitating efficient operation with minimal power loss.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) that allows it to operate effectively with standard logic level signals.
5. Package Type: It is available in a TO-252 (DPAK) package, which is compact and provides good thermal performance.
6. Enhanced Performance: The device is constructed to provide fast switching speeds and high energy efficiency.
7. Applications: It is commonly used in power management, motor control, and switching applications due to its robust performance.
These attributes make the NTD24N06T4G a versatile choice for designers in need of a reliable and efficient MOSFET for their electronic designs.
Package
The NTD24N06T4G is packaged in a DPAK (TO-252) type, which is a surface-mount package commonly used for power transistors. This package is designed to offer efficiency in thermal performance while maintaining a compact size suitable for high-density circuit boards.
Pinout
The NTD24N06T4G is an N-channel MOSFET. It typically comes in a DPAK (TO-252) package, which generally has three pins and a tab. The pins are designated as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is the terminal for the MOSFET current to exit. It connects to the source of charge carriers.
4. Tab: The metal tab is typically connected to the drain for heat dissipation purposes and may be soldered to a heatsink or PCB.
The NTD24N06T4G MOSFET is used in various applications, such as power management, switching regulators, and motor controllers, due to its ability to handle significant current and voltage levels.
1. Gate (G): This pin is used to control the MOSFET. Applying voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is the terminal for the MOSFET current to exit. It connects to the source of charge carriers.
4. Tab: The metal tab is typically connected to the drain for heat dissipation purposes and may be soldered to a heatsink or PCB.
The NTD24N06T4G MOSFET is used in various applications, such as power management, switching regulators, and motor controllers, due to its ability to handle significant current and voltage levels.
Manufacturer
The NTD24N06T4G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading supplier of semiconductor-based solutions. The company specializes in designing and manufacturing a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. These components are used in a variety of applications across different industries, such as automotive, industrial, communications, computing, and consumer electronics. onsemi is known for its focus on energy-efficient innovations and solutions that help reduce global energy use.
Application
The NTD24N06T4G is an N-channel MOSFET commonly used in applications requiring efficient switching and amplification. Its typical application areas include power management systems, DC-DC converters, motor drives, and load switching in automotive and industrial environments. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supply circuits and other applications demanding reliable and robust performance.
Equivalent
The NTD24N06T4G is an N-channel MOSFET. Equivalent products include:
1. IRFZ44N - by International Rectifier (now Infineon)
2. STP55NF06 - by STMicroelectronics
3. FDP6030BL - by ON Semiconductor
4. NTP5866N60G - by ON Semiconductor (similar specifications)
5. FQP30N06L - by Fairchild (now ON Semiconductor)
Ensure to verify specific parameters like voltage and current ratings for exact matches.
1. IRFZ44N - by International Rectifier (now Infineon)
2. STP55NF06 - by STMicroelectronics
3. FDP6030BL - by ON Semiconductor
4. NTP5866N60G - by ON Semiconductor (similar specifications)
5. FQP30N06L - by Fairchild (now ON Semiconductor)
Ensure to verify specific parameters like voltage and current ratings for exact matches.
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