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NT5CC256M16EP-EK
1.35V 4Gbit 933MHz DDR3L SDRAM VFBGA-96 Memory (ICs) RoHS
- メーカー
- Mfr。パート #NT5CC256M16EP-EK
- パッケージ
- データシート NT5CC256M16EP-EK DataSheet
- 在庫中7468
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | VFBGA-96 |
| Clock Frequency | 933MHz |
| Memory Format | DDR3L SDRAM |
| Memory Size | 4Gbit |
| Operating temperature | 0℃~+95℃ |
| Voltage - Supply | 1.35V |
概要
Description
The NT5CC256M16EP-EK is a memory evaluation kit designed for testing and prototyping with the NT5CC256M16E, a 256Mb DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip. This kit is particularly useful for developers and engineers looking to integrate DDR3 memory into their designs.
The NT5CC256M16E features a 16-bit wide data bus and operates at standard DDR3 frequencies, offering enhanced bandwidth and efficiency for high-performance applications. It supports various memory management features, ensuring data integrity and reliability.
The evaluation kit typically includes a PCB with the memory chip, necessary connectors, and support for various interfaces, making it easy to evaluate performance characteristics and compatibility with different systems. It often comes with software tools for testing, configuration, and monitoring memory functions. The NT5CC256M16EP-EK is essential for validating designs in consumer electronics, computing, and other applications requiring efficient memory solutions.
The NT5CC256M16E features a 16-bit wide data bus and operates at standard DDR3 frequencies, offering enhanced bandwidth and efficiency for high-performance applications. It supports various memory management features, ensuring data integrity and reliability.
The evaluation kit typically includes a PCB with the memory chip, necessary connectors, and support for various interfaces, making it easy to evaluate performance characteristics and compatibility with different systems. It often comes with software tools for testing, configuration, and monitoring memory functions. The NT5CC256M16EP-EK is essential for validating designs in consumer electronics, computing, and other applications requiring efficient memory solutions.
Features
The NT5CC256M16EP-EK is a 256Mb (32MB) DDR3 SDRAM memory module designed for high-performance applications. Key features include:
1. Technology: DDR3 SDRAM, offering improved speed and efficiency over previous generations.
2. Memory Density: 256Mb capacity, suitable for various embedded applications.
3. Interface: 64-bit wide data bus interface, allowing for fast data transfers.
4. Speed Grade: Operates at speeds up to 1600 MT/s, enhancing overall system performance.
5. Voltage: Low operating voltage of 1.5V, contributing to energy efficiency.
6. Package Type: Typically available in a compact FBGA package, facilitating integration into space-constrained designs.
7. Compatibility: Designed for compatibility with various microcontrollers and processors.
8. Applications: Ideal for use in consumer electronics, automotive systems, networking devices, and other embedded systems.
This memory module effectively balances performance and power efficiency, making it suitable for modern high-speed applications.
1. Technology: DDR3 SDRAM, offering improved speed and efficiency over previous generations.
2. Memory Density: 256Mb capacity, suitable for various embedded applications.
3. Interface: 64-bit wide data bus interface, allowing for fast data transfers.
4. Speed Grade: Operates at speeds up to 1600 MT/s, enhancing overall system performance.
5. Voltage: Low operating voltage of 1.5V, contributing to energy efficiency.
6. Package Type: Typically available in a compact FBGA package, facilitating integration into space-constrained designs.
7. Compatibility: Designed for compatibility with various microcontrollers and processors.
8. Applications: Ideal for use in consumer electronics, automotive systems, networking devices, and other embedded systems.
This memory module effectively balances performance and power efficiency, making it suitable for modern high-speed applications.
Package
The NT5CC256M16EP-EK is packaged in a 78-ball FBGA (Fine-Pitch Ball Grid Array) format. This compact packaging is designed for efficient space utilization and thermal management in electronic applications.
Pinout
The NT5CC256M16EP-EK is a 256Mb DDR3 SDRAM memory chip. It features a total of 78 pins. The pins serve various functions including power supply, ground, data input/output, command, and address signals. Key functions include:
- Data Pins (DQ): 16 bi-directional data pins for data transfer.
- Address Pins (A): Used for addressing memory locations.
- Control Pins: Includes command and clock pins (e.g., CLK, CKE, CS, RAS, CAS, WE) to control memory operations.
- Power and Ground Pins: To provide necessary voltage and ground reference.
This chip is designed for high-performance applications in computing devices and utilizes a 1.5V power supply for operation.
- Data Pins (DQ): 16 bi-directional data pins for data transfer.
- Address Pins (A): Used for addressing memory locations.
- Control Pins: Includes command and clock pins (e.g., CLK, CKE, CS, RAS, CAS, WE) to control memory operations.
- Power and Ground Pins: To provide necessary voltage and ground reference.
This chip is designed for high-performance applications in computing devices and utilizes a 1.5V power supply for operation.
Manufacturer
The NT5CC256M16EP-EK is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company specializing in the production of dynamic random-access memory (DRAM) products. Established in 1995, it is known for its high-performance memory solutions, including DRAM chips for various applications such as consumer electronics, computing, and telecommunications. Nanya is recognized as one of the major players in the semiconductor industry, focusing on memory technologies and contributing to advancements in high-density memory solutions.
Application
The NT5CC256M16EP-EK is a 256Mb DDR3 SDRAM memory module, commonly used in applications such as mobile devices, tablets, laptops, and embedded systems. It provides high-speed data access for tasks requiring efficient memory handling, including gaming, multimedia processing, and data-intensive applications. Its low power consumption makes it suitable for battery-operated devices.
Equivalent
The NT5CC256M16EP-EK chip, a 256Mb DDR3 SDRAM, has equivalents including the Micron MT41J256M16HA-125, Samsung K4B4G1646E-BCK0, and Hynix H5TQ2G83CFR. Always verify specifications and compatibility before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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3. ワイヤー 転送
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