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NT5CB256M16ER-FL
4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM TFBGA-96 Memory (ICs) RoHS
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- Mfr。パート #NT5CB256M16ER-FL
- パッケージ
- データシート NT5CB256M16ER-FL DataSheet
- 在庫中21332
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
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仕様
| Packaging | TFBGA-96 |
| Clock Frequency | 1.066GHz |
| Memory Format | DDR3 SDRAM |
| Memory Size | 4Gbit |
| Operating temperature | 0℃~+95℃ |
| Voltage - Supply | 1.425V~1.575V |
概要
Description
The NT5CB256M16ER-FL is a DRAM (Dynamic Random Access Memory) component manufactured by Nanya Technology. It features a 256 Megabit (32 Megabyte) capacity organized in a 16-bit wide configuration, allowing for efficient data handling in various applications. This memory chip is built using advanced semiconductor technology, enabling high-speed performance and low power consumption, which is crucial for modern electronic devices.
Typically, it operates at standard voltage levels (1.8V), making it suitable for mobile and embedded systems where power efficiency is essential. The NT5CB256M16ER-FL is often employed in applications such as consumer electronics, telecommunications, and computing devices, delivering reliable performance for tasks that require fast data access and storage.
Additionally, the chip supports various data transfer protocols and is compatible with industry standards, ensuring seamless integration into various systems. Overall, it serves as a key component in enhancing the performance and efficiency of modern electronic devices.
Typically, it operates at standard voltage levels (1.8V), making it suitable for mobile and embedded systems where power efficiency is essential. The NT5CB256M16ER-FL is often employed in applications such as consumer electronics, telecommunications, and computing devices, delivering reliable performance for tasks that require fast data access and storage.
Additionally, the chip supports various data transfer protocols and is compatible with industry standards, ensuring seamless integration into various systems. Overall, it serves as a key component in enhancing the performance and efficiency of modern electronic devices.
Features
The NT5CB256M16ER-FL is a 2GB DDR3 SDRAM memory chip, featuring a 256Mx16-bit organization. Key specifications include:
- Density: 2GB
- Type: DDR3 SDRAM
- Speed: Operates at a data rate of up to 1066 MT/s
- Voltage: Typically operates at 1.5V
- Package: Available in a FBGA (Fine Ball Grid Array) package, facilitating compact designs.
- Features: It supports various memory management functions such as burst mode and has a prefetch architecture that improves performance efficiency.
The chip is suitable for applications in computing devices, including laptops, desktops, and servers, providing a reliable solution for memory-intensive tasks. It meets JEDEC standards and is often used in both consumer and industrial applications.
- Density: 2GB
- Type: DDR3 SDRAM
- Speed: Operates at a data rate of up to 1066 MT/s
- Voltage: Typically operates at 1.5V
- Package: Available in a FBGA (Fine Ball Grid Array) package, facilitating compact designs.
- Features: It supports various memory management functions such as burst mode and has a prefetch architecture that improves performance efficiency.
The chip is suitable for applications in computing devices, including laptops, desktops, and servers, providing a reliable solution for memory-intensive tasks. It meets JEDEC standards and is often used in both consumer and industrial applications.
Package
The NT5CB256M16ER-FL is a DDR3 SDRAM chip packaged in a standard 78-ball Fine-Pitch Ball Grid Array (FBGA) format. This type of packaging is designed for high-density applications, providing efficient thermal performance and space-saving benefits.
Pinout
The NT5CB256M16ER-FL is a 256Mb (32MB) DDR3 SDRAM memory chip, featuring a 64-bit data width. It has a total of 84 pins. The primary functions of these pins include:
- Data Pins (DQ0-DQ63): 64 data lines for data input/output.
- Address Pins (A0-A13): Used for selecting the memory location.
- Control Pins (BA0, BA1): Bank address pins for selecting the bank.
- Chip Select (CS): Activates the chip for communication.
- Clock (CK, CK#): Clock input for synchronization.
- Command Pins (RAS, CAS, WE): Used for read/write commands and control.
- Write Enable (WE): Indicates data is being written.
- Read Enable (OE): Indicates data is being read.
- Power and Ground Pins (VDD, VSS): Supply voltage and ground connections.
This chip is commonly used in computing and electronic devices for its high-speed data access and efficiency.
- Data Pins (DQ0-DQ63): 64 data lines for data input/output.
- Address Pins (A0-A13): Used for selecting the memory location.
- Control Pins (BA0, BA1): Bank address pins for selecting the bank.
- Chip Select (CS): Activates the chip for communication.
- Clock (CK, CK#): Clock input for synchronization.
- Command Pins (RAS, CAS, WE): Used for read/write commands and control.
- Write Enable (WE): Indicates data is being written.
- Read Enable (OE): Indicates data is being read.
- Power and Ground Pins (VDD, VSS): Supply voltage and ground connections.
This chip is commonly used in computing and electronic devices for its high-speed data access and efficiency.
Manufacturer
The NT5CB256M16ER-FL is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company specializing in the production of dynamic random-access memory (DRAM) products. Founded in 1995, it primarily focuses on memory solutions for computers, servers, and other electronic devices. Nanya is known for its commitment to innovation in memory technology and has established itself as a major player in the global semiconductor industry. The company contributes to various sectors, including consumer electronics, automotive, and industrial applications.
Application
The NT5CB256M16ER-FL is a 256Mb DDR3 SDRAM memory chip primarily used in consumer electronics, such as smartphones, tablets, and laptops. It is also suitable for networking devices, embedded systems, and industrial applications where high-speed data processing and memory efficiency are required. Its low power consumption makes it ideal for battery-operated devices.
Equivalent
The NT5CB256M16ER-FL is a 256Mb DDR2 SDRAM chip. Equivalent products include the MT47H128M8 (Micron), K4T1G164EE (Samsung), and IS47S256M8 (Integrated Silicon Solution). Ensure compatibility with your specific application, as variations in timing, voltage, and package type may exist. Always verify with the manufacturer’s datasheets for exact specifications.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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