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NSVJ2394SA3T1G
JFET N-CH 15V 50MA SC59-3/CP3
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- データシート NSVJ2394SA3T1G DataSheet
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仕様
| Part Status | Active |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 15 V |
| Drain to Source Voltage (Vdss) | 15 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 32 mA @ 5 V |
| Current Drain (Id) - Max | 50 mA |
| Voltage - Cutoff (VGS off) @ Id | 700 mV @ 100 µA |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 5V |
| Power - Max | 200 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SC-59-3/CP3 |
| Base Product Number | NSVJ2394 |
概要
Description
The NSVJ2394SA3T1G is a dual N-channel MOSFET designed for various switching applications, particularly in low-voltage environments. It features a low on-resistance, which enhances efficiency and reduces power loss during operation. The device is housed in a compact SOT-23 package, making it suitable for space-constrained applications.
With a maximum gate-source voltage of ±20V and a continuous drain current rating, the NSVJ2394SA3T1G is ideal for driving loads in power management, motor control, and signal switching applications. Its fast switching capabilities help in achieving higher performance in digital and analog circuits.
In addition, the MOSFET exhibits robustness against thermal and electrical stress, contributing to reliable operation in diverse conditions. The NSVJ2394SA3T1G is commonly used in consumer electronics, automotive electronics, and industrial automation. Users should refer to the manufacturer's datasheet for detailed specifications, including electrical characteristics, thermal performance, and recommended operating conditions.
With a maximum gate-source voltage of ±20V and a continuous drain current rating, the NSVJ2394SA3T1G is ideal for driving loads in power management, motor control, and signal switching applications. Its fast switching capabilities help in achieving higher performance in digital and analog circuits.
In addition, the MOSFET exhibits robustness against thermal and electrical stress, contributing to reliable operation in diverse conditions. The NSVJ2394SA3T1G is commonly used in consumer electronics, automotive electronics, and industrial automation. Users should refer to the manufacturer's datasheet for detailed specifications, including electrical characteristics, thermal performance, and recommended operating conditions.
Features
The NSVJ2394SA3T1G is a N-channel MOSFET designed for various applications including power management and switching. Its key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling continuous drain current (I_D) around 9.2A.
3. R_DS(on): Low on-resistance (R_DS(on)), around 13 mΩ, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) range of 0.8V to 1.4V, allowing for efficient drive at low voltages.
5. Package: Usually available in a compact SO-8 package, suitable for space-constrained designs.
6. High Switching Speed: Offers fast switching capabilities, making it ideal for high-frequency applications.
7. Thermal Performance: Good thermal characteristics help in managing heat dissipation.
Overall, the NSVJ2394SA3T1G is suitable for applications such as DC-DC converters, motor drives, and load switching in consumer electronics.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling continuous drain current (I_D) around 9.2A.
3. R_DS(on): Low on-resistance (R_DS(on)), around 13 mΩ, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) range of 0.8V to 1.4V, allowing for efficient drive at low voltages.
5. Package: Usually available in a compact SO-8 package, suitable for space-constrained designs.
6. High Switching Speed: Offers fast switching capabilities, making it ideal for high-frequency applications.
7. Thermal Performance: Good thermal characteristics help in managing heat dissipation.
Overall, the NSVJ2394SA3T1G is suitable for applications such as DC-DC converters, motor drives, and load switching in consumer electronics.
Package
The NSVJ2394SA3T1G is packaged in a SOT-23 surface mount package.
Pinout
The NSVJ2394SA3T1G is a dual N-channel MOSFET in a SOT-23 package, featuring a total of 6 pins.
Pin Count:
- Total Pins: 6
Pin Functions:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Output for the first N-channel MOSFET.
3. Source 1 (S1): Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Output for the second N-channel MOSFET.
6. Source 2 (S2): Source terminal for the second N-channel MOSFET.
The device is designed for low-voltage applications and provides efficient switching performance.
Pin Count:
- Total Pins: 6
Pin Functions:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Output for the first N-channel MOSFET.
3. Source 1 (S1): Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Output for the second N-channel MOSFET.
6. Source 2 (S2): Source terminal for the second N-channel MOSFET.
The device is designed for low-voltage applications and provides efficient switching performance.
Manufacturer
The NSVJ2394SA3T1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in the design and manufacture of a wide range of semiconductor products, including discrete devices, analog ICs, and power management solutions. The company serves various industries, such as automotive, communications, computing, consumer electronics, and industrial applications. Their products are integral in enabling efficient energy management and enhancing connectivity in numerous electronic devices.
Application
The NSVJ2394SA3T1G is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, load switching, and motor control. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices, portable electronics, and power supplies. It's also utilized in automotive applications for efficient power distribution and control.
Equivalent
The NSVJ2394SA3T1G is a low-voltage N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and the SI2302. Always check the specifications for gate threshold voltage, R_DS(on), and package type to ensure compatibility for your specific application.
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