NSR0170HT1G

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NSR0170HT1G

DIODE SCHOTTKY 70V 70MA SOD323

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  • Mfr。パート #NSR0170HT1G
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仕様

Part Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 70 V
Current - Average Rectified (Io) 70mA
Voltage - Forward (Vf) (Max) @ If 730 mV @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr 3 µA @ 70 V
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Supplier Device Package SOD-323
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number NSR0170

概要

Description

The NSR0170HT1G is a high-performance N-channel MOSFET designed for low-voltage applications. This device is characterized by its low on-resistance (R_DS(on)), which enhances efficiency in power management systems. It typically features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of around 17A, making it suitable for various applications, including switching power supplies, motor drivers, and other power management circuits.
With its fast switching capabilities, the NSR0170HT1G is ideal for high-frequency operations, providing effective thermal management due to its low thermal resistance. The package usually comes in a compact, surface-mount format, facilitating easy integration into modern electronic designs.
This MOSFET is favored in applications where energy efficiency and thermal performance are critical, and it is widely used in consumer electronics, automotive, and industrial applications. Overall, the NSR0170HT1G is a reliable choice for designers looking to optimize power efficiency in their circuits.

Features

The NSR0170HT1G is an N-channel MOSFET designed for high efficiency and performance in power management applications. Key features include:
1. Low On-Resistance (Rds(on)): It offers a very low Rds(on), reducing power loss and improving efficiency.
2. High Speed Switching: The device is optimized for fast switching applications, making it suitable for power supplies and converters.
3. High Voltage Rating: Operates effectively with a maximum drain-source voltage (Vds) of 60V.
4. Low Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is low, enabling it to be driven by low-voltage signals.
5. Improved Thermal Performance: It has a robust thermal design allowing for better heat dissipation.
6. Compact Package: Available in a surface-mount package (SOT-23), facilitating space-saving designs in modern electronics.
These features make the NSR0170HT1G ideal for applications such as DC-DC converters, motor drives, and power management systems in consumer electronics.

Package

The NSR0170HT1G is packaged in a SOT-23-3 package type, which is a small, surface-mount package commonly used for transistors and semiconductor devices.

Pinout

The NSR0170HT1G is a N-channel MOSFET with a pin count of 3. Its primary functions include low on-resistance and high-speed switching, making it suitable for various applications in power management, load switching, and signal processing.
The pin configuration typically includes:
1. Gate (G): Controls the MOSFET's operation, turning it on or off.
2. Drain (D): Connected to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): Connected to ground or the negative side of the load; current exits the source when the MOSFET is on.
This part is designed for high-density applications, allowing for efficient performance in compact designs.

Manufacturer

The NSR0170HT1G is manufactured by ON Semiconductor, a global company that specializes in semiconductor solutions. ON Semiconductor provides a wide range of products, including analog, discrete, and power management components, as well as sensors and communication solutions. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on energy-efficient technologies. Founded in 1999, ON Semiconductor operates in multiple locations worldwide and emphasizes innovation in areas like power and signal management, with a commitment to sustainability and energy efficiency.

Application

The NSR0170HT1G is a low on-resistance N-channel MOSFET primarily used in power management applications. Its areas of application include battery management systems, portable devices, power supplies, LED drivers, and motor control circuits. Its features enable efficient switching and energy management in compact electronic designs.

Equivalent

The NSR0170HT1G is a N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000. For higher power applications, consider the IRLZ44N or the SI2302. Always verify specifications like voltage, current rating, and RDS(on) for compatibility.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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