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NRVTS2H60ESFT1G
DIODE SCHOTTKY SOD123
- メーカー
- Mfr。パート #NRVTS2H60ESFT1G
- パッケージ SOD-123FL
- データシート
- 在庫中2293
100% オリジナル &新しい
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 60 V |
| Current-AverageRectified(Io) | 2A |
| Voltage-Forward(Vf)(Max)@If | 650 mV @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 12 µA @ 60 V |
| MountingType | Surface Mount |
| Package/Case | SOD-123F |
| SupplierDevicePackage | SOD-123FL |
概要
Description
The NRVTS2H60ESFT1G is a specific N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a voltage rating of 600V and a current rating of 2A, making it suitable for high-voltage switching applications. This device is characterized by low on-resistance (R_DS(on)), which enhances its efficiency by minimizing power loss during operation.
The NRVTS2H60ESFT1G is often used in power supplies, motor control circuits, and DC-DC converters. Its compact package allows for efficient thermal performance and easy integration into circuit designs.
Key features typically include fast switching speeds, robust avalanche ratings, and compatibility with surface mount technology (SMT), facilitating automated assembly processes. When selecting this MOSFET, it is crucial to consider its thermal management and ensure that it operates within its specified parameters for optimal performance.
Overall, the NRVTS2H60ESFT1G is a reliable choice for engineers looking to implement efficient high-voltage solutions in their designs.
The NRVTS2H60ESFT1G is often used in power supplies, motor control circuits, and DC-DC converters. Its compact package allows for efficient thermal performance and easy integration into circuit designs.
Key features typically include fast switching speeds, robust avalanche ratings, and compatibility with surface mount technology (SMT), facilitating automated assembly processes. When selecting this MOSFET, it is crucial to consider its thermal management and ensure that it operates within its specified parameters for optimal performance.
Overall, the NRVTS2H60ESFT1G is a reliable choice for engineers looking to implement efficient high-voltage solutions in their designs.
Features
The NRVTS2H60ESFT1G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of approximately 30A, allowing it to manage substantial loads.
3. R_DS(on): The on-resistance is low, typically around 25 mΩ, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient driving with lower gate voltages.
5. Package Type: It comes in a compact TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: The MOSFET supports fast switching speeds, enhancing performance in high-frequency applications.
Overall, the NRVTS2H60ESFT1G is ideal for applications in power supplies, motor drives, and DC-DC converters due to its efficiency and robust specifications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of approximately 30A, allowing it to manage substantial loads.
3. R_DS(on): The on-resistance is low, typically around 25 mΩ, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient driving with lower gate voltages.
5. Package Type: It comes in a compact TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: The MOSFET supports fast switching speeds, enhancing performance in high-frequency applications.
Overall, the NRVTS2H60ESFT1G is ideal for applications in power supplies, motor drives, and DC-DC converters due to its efficiency and robust specifications.
Package
The NRVTS2H60ESFT1G is packaged in a surface mount configuration, specifically a TO-263 package. This package type is designed for efficient thermal performance and easy integration into various electronic circuits.
Pinout
The NRVTS2H60ESFT1G is a N-channel MOSFET manufactured by ON Semiconductor. It features a pin count of 3. The functional pins of this device are:
1. Gate (G): This pin is used to control the MOSFET. A positive voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin connects to the load. The current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply, completing the circuit.
The NRVTS2H60ESFT1G is designed for applications requiring efficient switching performance in power management systems.
1. Gate (G): This pin is used to control the MOSFET. A positive voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin connects to the load. The current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply, completing the circuit.
The NRVTS2H60ESFT1G is designed for applications requiring efficient switching performance in power management systems.
Manufacturer
The NRVTS2H60ESFT1G is manufactured by ON Semiconductor, a global supplier of semiconductor components. ON Semiconductor specializes in a wide range of products, including power management, analog, logic, timing, and data conversion devices. The company is known for its focus on energy-efficient technologies and solutions for various applications, including automotive, industrial, and consumer electronics. Founded in 1999, ON Semiconductor has grown through acquisitions and innovation, establishing itself as a key player in the semiconductor industry, with a strong commitment to sustainability and advanced technological development.
Application
The NRVTS2H60ESFT1G is a dual N-channel MOSFET commonly used in power management applications, including DC-DC converters, power supply circuits, and motor control. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power switching applications in consumer electronics, renewable energy systems, and automotive applications.
Equivalent
The NRVTS2H60ESFT1G chip is a MOSFET typically used in power applications. Equivalent products may include the IRF740, STP2N60, and FQP2N60. When looking for alternatives, consider the voltage and current ratings, RDS(on), and package type to ensure compatibility. Always verify the specifications to meet your specific application needs.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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