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NRVHPD660T4G
DIODE GEN PURP 600V 6A DPAK
- メーカー
- Mfr。パート #NRVHPD660T4G
- パッケージ DPAK-3
- データシート
- 在庫中7673
100% オリジナル &新しい
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365日の保証
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仕様
| Package | Tape & Reel (TR),Bulk |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Last Time Buy |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 600 V |
| Current-AverageRectified(Io) | 6A |
| Voltage-Forward(Vf)(Max)@If | 3 V @ 6 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 50 ns |
| Current-ReverseLeakage@Vr | 30 µA @ 600 V |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| SupplierDevicePackage | DPAK |
概要
Description
NRVHPD660T4G is a high-performance, energy-efficient power MOSFET designed for various applications in power management and conversion. It features low on-resistance, enabling improved efficiency and thermal performance in devices such as power supplies, motor drivers, and electric vehicles. The part is suitable for high-frequency switching applications due to its fast switching capabilities, which help minimize energy losses.
With a voltage rating typically around 60V and a current rating that supports demanding applications, the NRVHPD660T4G is often utilized in both consumer and industrial electronics. Its robustness against thermal stress and reliability under various operational conditions make it a preferred choice among engineers. The packaging is designed for ease of integration into circuit boards, ensuring a compact footprint while maintaining high performance.
Overall, NRVHPD660T4G stands out for its combination of efficiency, versatility, and reliability in modern electronic designs.
With a voltage rating typically around 60V and a current rating that supports demanding applications, the NRVHPD660T4G is often utilized in both consumer and industrial electronics. Its robustness against thermal stress and reliability under various operational conditions make it a preferred choice among engineers. The packaging is designed for ease of integration into circuit boards, ensuring a compact footprint while maintaining high performance.
Overall, NRVHPD660T4G stands out for its combination of efficiency, versatility, and reliability in modern electronic designs.
Features
The NRVHPD660T4G is a high-performance power MOSFET designed for various applications, primarily in power management systems. Key features include:
1. Voltage Rating: It typically supports high voltage operations, making it suitable for demanding applications.
2. Low On-Resistance (RDS(on)): This ensures efficient operation with minimal power loss, enhancing overall system efficiency.
3. Fast Switching Capabilities: It allows for rapid switching, which is crucial in applications like switch-mode power supplies and motor drivers.
4. Thermal Performance: Designed to operate at high temperatures, it has good thermal stability, reducing the risk of overheating.
5. Package Type: Usually available in compact packages, facilitating easy integration into circuit designs while saving board space.
6. High Current Handling: Capable of managing significant current levels, making it ideal for high-load applications.
7. Gate Threshold Voltage: Optimized for driving with standard logic levels, enhancing compatibility with various control circuits.
These features make the NRVHPD660T4G suitable for a wide range of electronic applications.
1. Voltage Rating: It typically supports high voltage operations, making it suitable for demanding applications.
2. Low On-Resistance (RDS(on)): This ensures efficient operation with minimal power loss, enhancing overall system efficiency.
3. Fast Switching Capabilities: It allows for rapid switching, which is crucial in applications like switch-mode power supplies and motor drivers.
4. Thermal Performance: Designed to operate at high temperatures, it has good thermal stability, reducing the risk of overheating.
5. Package Type: Usually available in compact packages, facilitating easy integration into circuit designs while saving board space.
6. High Current Handling: Capable of managing significant current levels, making it ideal for high-load applications.
7. Gate Threshold Voltage: Optimized for driving with standard logic levels, enhancing compatibility with various control circuits.
These features make the NRVHPD660T4G suitable for a wide range of electronic applications.
Package
The NRVHPD660T4G is available in a TO-252 package type, also known as DPAK. This surface-mount package is designed for efficient thermal performance and ease of integration in electronic circuits.
Pinout
The NRVHPD660T4G is a N-channel MOSFET device with a total of 8 pins. The primary function of this component is to act as a power switch in various electronic applications, enabling efficient control of high-side or low-side loads.
The pin configuration typically includes the following:
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The terminal through which current flows out when the MOSFET is on.
3. Source (S): The terminal through which current enters when the device is on.
4. Body Diode: Internal, allows current flow in the reverse direction.
Additional pins may include options for thermal management or connections for specific application needs. This device is commonly used in power management, automotive applications, and various switching applications due to its low on-resistance and high-speed capabilities. For precise pin functions, refer to the specific datasheet from the manufacturer.
The pin configuration typically includes the following:
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The terminal through which current flows out when the MOSFET is on.
3. Source (S): The terminal through which current enters when the device is on.
4. Body Diode: Internal, allows current flow in the reverse direction.
Additional pins may include options for thermal management or connections for specific application needs. This device is commonly used in power management, automotive applications, and various switching applications due to its low on-resistance and high-speed capabilities. For precise pin functions, refer to the specific datasheet from the manufacturer.
Manufacturer
The NRVHPD660T4G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor designs and manufactures a wide range of semiconductor components and solutions, including power management, analog, sensors, and logic devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Headquartered in Phoenix, Arizona, ON Semiconductor focuses on providing high-performance and energy-efficient products to meet the demands of modern technology applications.
Application
The NRVHPD660T4G is a high-performance N-channel MOSFET primarily used in power management applications, including switched-mode power supplies (SMPS), DC-DC converters, and motor control systems. Its features make it suitable for automotive, industrial, and consumer electronics applications, where efficient power handling and thermal management are critical.
Equivalent
The NRVHPD660T4G is an N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP75NF75
3. FQP75N06
4. BSS138
5. AON7410
Always verify specifications like voltage, current ratings, and package type for suitability in your specific application.
1. IRF3205
2. STP75NF75
3. FQP75N06
4. BSS138
5. AON7410
Always verify specifications like voltage, current ratings, and package type for suitability in your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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現在、下記の支払い方法のみを受け入れています。:
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2. クレジット・デビットカード
3. ワイヤー 転送
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