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NRVB140SFT1G
DIODE SCHOTTKY 40V 1A SOD123
- メーカー
- Mfr。パート #NRVB140SFT1G
- パッケージ SOD-123FL
- データシート
- 在庫中2341
100% オリジナル &新しい
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 40 V |
| Current-AverageRectified(Io) | 1A |
| Voltage-Forward(Vf)(Max)@If | 550 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 500 µA @ 40 V |
| MountingType | Surface Mount |
| Package/Case | SOD-123F |
| SupplierDevicePackage | SOD-123FL |
概要
Description
The NRVB140SFT1G is a voltage regulator, specifically a low-dropout (LDO) linear regulator designed for various electronic applications. It typically provides a stable output voltage while maintaining high efficiency, particularly in battery-powered devices where power conservation is crucial. The device features a low quiescent current, allowing it to extend battery life in portable applications.
Key specifications often include an output voltage range, input voltage limits, and maximum output current capability. It may also incorporate protection features such as thermal shutdown and short-circuit protection, ensuring reliability and safety during operation. The package type is usually compact, facilitating integration into space-constrained designs.
Engineered for ease of use, the NRVB140SFT1G may require minimal external components, making it suitable for various applications, including automotive, consumer electronics, and industrial devices. Overall, it serves as a dependable choice for designers seeking efficient power management solutions.
Key specifications often include an output voltage range, input voltage limits, and maximum output current capability. It may also incorporate protection features such as thermal shutdown and short-circuit protection, ensuring reliability and safety during operation. The package type is usually compact, facilitating integration into space-constrained designs.
Engineered for ease of use, the NRVB140SFT1G may require minimal external components, making it suitable for various applications, including automotive, consumer electronics, and industrial devices. Overall, it serves as a dependable choice for designers seeking efficient power management solutions.
Features
The NRVB140SFT1G is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 40V, making it suitable for use in power supply circuits.
2. Current Handling: It can handle continuous drain currents up to 120A, making it ideal for high-current applications.
3. Low On-Resistance: The device offers a low R_DS(on) value, which reduces power losses and improves efficiency in switching applications.
4. Fast Switching Speed: Designed for rapid switching, it supports efficient operation in high-frequency applications.
5. Thermal Performance: The package is optimized for effective heat dissipation, which enhances reliability in demanding environments.
6. Gate Threshold Voltage: It has a low gate threshold voltage, enabling easy driving with low-voltage control signals.
7. Package Type: Typically available in DPAK or similar packages, providing ease of integration into circuit designs.
These features make the NRVB140SFT1G suitable for applications such as DC-DC converters, motor drivers, and power management systems.
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 40V, making it suitable for use in power supply circuits.
2. Current Handling: It can handle continuous drain currents up to 120A, making it ideal for high-current applications.
3. Low On-Resistance: The device offers a low R_DS(on) value, which reduces power losses and improves efficiency in switching applications.
4. Fast Switching Speed: Designed for rapid switching, it supports efficient operation in high-frequency applications.
5. Thermal Performance: The package is optimized for effective heat dissipation, which enhances reliability in demanding environments.
6. Gate Threshold Voltage: It has a low gate threshold voltage, enabling easy driving with low-voltage control signals.
7. Package Type: Typically available in DPAK or similar packages, providing ease of integration into circuit designs.
These features make the NRVB140SFT1G suitable for applications such as DC-DC converters, motor drivers, and power management systems.
Package
The NRVB140SFT1G is packaged in a surface-mount type SOT-23 package. This compact package is designed for efficient performance in various electronic applications.
Pinout
The NRVB140SFT1G is a dual N-channel MOSFET with a pin count of 8. Its main functions include switching and amplifying electronic signals in various applications, particularly in power management systems.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Drain connection for the first N-channel MOSFET.
3. Source 1 (S1) - Source connection for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Drain connection for the second N-channel MOSFET.
6. Source 2 (S2) - Source connection for the second N-channel MOSFET.
7. Drain (Common) - Shared drain for both MOSFETs.
8. Source (Common) - Shared source for both MOSFETs.
These devices are often used in applications such as load switches, power management, and motor control.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Drain connection for the first N-channel MOSFET.
3. Source 1 (S1) - Source connection for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Drain connection for the second N-channel MOSFET.
6. Source 2 (S2) - Source connection for the second N-channel MOSFET.
7. Drain (Common) - Shared drain for both MOSFETs.
8. Source (Common) - Shared source for both MOSFETs.
These devices are often used in applications such as load switches, power management, and motor control.
Manufacturer
The NRVB140SFT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in producing a wide range of electronic components, including integrated circuits, power management solutions, and signal management devices. The company focuses on providing energy-efficient and advanced semiconductor technologies for various applications, such as automotive, industrial, communications, and consumer electronics. With a commitment to innovation and sustainability, ON Semiconductor plays a significant role in the semiconductor industry, addressing the growing demand for electronic devices and systems.
Application
The NRVB140SFT1G is a N-channel MOSFET used in various application areas including power management, motor control, DC-DC converters, and switching applications. Its low on-resistance and fast switching capabilities make it suitable for use in power supplies, battery management systems, and electrical load switching in consumer electronics and automotive applications.
Equivalent
The NRVB140SFT1G is a Schottky barrier rectifier. Equivalent products include the 1N5817, 1N5818, and 1N5819 from various manufacturers. Other potential equivalents might be the SR120, SR140, and MBR140 from different brands. Always check specifications like voltage, current, and package type for compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
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