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NGTB50N65FL2WG
IGBT TRENCH/FS 650V 100A TO247-3
- メーカー
- Mfr。パート #NGTB50N65FL2WG
- パッケージ TO-247-3
- データシート NGTB50N65FL2WG DataSheet
- 在庫中5203
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仕様
| Supplier | Rochester Electronics, LLC,onsemi |
| Package | Bulk,Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 100 A |
| Current-CollectorPulsed(Icm) | 200 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 50A |
| Power-Max | 417 W |
| SwitchingEnergy | 1.5mJ (on), 460µJ (off) |
| InputType | Standard |
| GateCharge | 220 nC |
| Td(on/off)@25°C | 100ns/237ns |
| TestCondition | 400V, 50A, 10Ohm, 15V |
| ReverseRecoveryTime(trr) | 94 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
概要
Description
NGTB50N65FL2WG is a high-voltage, high-current N-channel switching transistor (an N-channel IGBT/NGBT) used in power electronics. Typical ratings are around 650 V blocking with about 50 A continuous current, designed for fast switching in power supplies, motor drives, inverters, solar and UPS circuits. It uses trench-gate technology for lower on-state losses and faster switching, often with an integrated anti-parallel diode.
Key points:
- Applications: motor drives, inverters, switched-mode power supplies, renewable energy systems.
- Drive: gate typically driven at around 12–15 V (not a logic-level 3.3–5 V), with proper gate protection and gate resistors.
- Thermal: requires heat sinking/adequate cooling due to conduction and switching losses.
- Package: 2WG (surface-mount high-current package; check the datasheet for exact footprint and mounting).
For exact electrical characteristics (Vce(sat), switching times, gate threshold, Rds(on) if applicable, safe operating area, and thermal data), refer to the official datasheet from the manufacturer.
Key points:
- Applications: motor drives, inverters, switched-mode power supplies, renewable energy systems.
- Drive: gate typically driven at around 12–15 V (not a logic-level 3.3–5 V), with proper gate protection and gate resistors.
- Thermal: requires heat sinking/adequate cooling due to conduction and switching losses.
- Package: 2WG (surface-mount high-current package; check the datasheet for exact footprint and mounting).
For exact electrical characteristics (Vce(sat), switching times, gate threshold, Rds(on) if applicable, safe operating area, and thermal data), refer to the official datasheet from the manufacturer.
Features
NGTB50N65FL2WG is a 650 V N-channel power MOSFET. Key features:
- N-channel enhancement mode
- Vds = 650 V; Id ≈ 50 A (continuous drain current)
- Trench MOSFET technology for improved efficiency
- Low switching losses with reduced gate charge
- Avalanche-rated for protection against inductive loads
- Fast body diode with good reverse-recovery behavior
- Wide operating temperature range (typical for power MOSFETs)
- RoHS compliant, lead-free packaging (FL2WG)
Suitable for high-voltage switching in power supplies, PFC, motor drives, and similar applications.
- N-channel enhancement mode
- Vds = 650 V; Id ≈ 50 A (continuous drain current)
- Trench MOSFET technology for improved efficiency
- Low switching losses with reduced gate charge
- Avalanche-rated for protection against inductive loads
- Fast body diode with good reverse-recovery behavior
- Wide operating temperature range (typical for power MOSFETs)
- RoHS compliant, lead-free packaging (FL2WG)
Suitable for high-voltage switching in power supplies, PFC, motor drives, and similar applications.
Package
D2PAK (TO-263) surface-mount package.
Pinout
Pin count: 4 (Gate, Drain, Source pins plus an exposed drain tab). Function: N-channel enhancement‑mode power MOSFET (high-voltage switch, ~650 V, ~50 A); the drain tab is connected to the Drain.
Manufacturer
Manufacturer: Nexperia.
What kind of company: Nexperia is a Dutch multinational semiconductor company specializing in discrete and logic components, including power MOSFETs, diodes, transistors, and related passive components used in power electronics.
What kind of company: Nexperia is a Dutch multinational semiconductor company specializing in discrete and logic components, including power MOSFETs, diodes, transistors, and related passive components used in power electronics.
Application
Typical applications:
- High-voltage switching in switch‑mode power supplies, PFC stages and DC‑DC converters
- Solar/grid inverters and other PV systems
- Motor drives and variable‑speed drives
- Uninterruptible power supplies (UPS) and power conditioning
- Industrial welding and induction heating equipment
- High-voltage switching in switch‑mode power supplies, PFC stages and DC‑DC converters
- Solar/grid inverters and other PV systems
- Motor drives and variable‑speed drives
- Uninterruptible power supplies (UPS) and power conditioning
- Industrial welding and induction heating equipment
Equivalent
NGTB50N65FL2WG is a 650 V, ~50 A N‑channel MOSFET in a WG (likely D2PAK) package. Exact equivalents depend on Rds(on) and packaging. For precise substitutes, share the datasheet or target Rds(on). Otherwise, search 650 V, ~50 A N‑MOSFETs in D2PAK from major vendors and use distributor cross-reference tools (DigiKey/Mouser) to map part-to-part.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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3. ワイヤー 転送
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