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NCE60P82A
- メーカー
- Mfr。パート #NCE60P82A
- パッケージ
- データシート NCE60P82A DataSheet
- 在庫中4861
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仕様
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220 |
| Operating Temperature | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 82A |
| Pd - Power Dissipation | 150W |
| Drain to Source Voltage | 60V |
| RDS(on) | 13mΩ@10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.2V |
| Gate Charge(Qg) | 62.1nC@10V |
| Input Capacitance(Ciss@Vds) | 5604pF@30V |
| Reverse Transfer Capacitance (Crss@Vds) | 265pF@30V |
概要
Description
The NCE60P82A is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage of 60V and a continuous drain current capability of up to 82A, making it suitable for various high-power circuits, such as switching power supplies, motor drivers, and amplifiers.
Key specifications include a low on-resistance (RDS(on)), which minimizes power loss during operation, and a fast switching speed, allowing for efficient energy conversion and reduced heat generation. The device is housed in a TO-220 package, facilitating effective heat dissipation.
The NCE60P82A is popular in automotive, industrial, and consumer electronics applications due to its reliability and efficiency. Overall, it is an ideal choice for designers seeking robust performance in demanding electrical environments.
Key specifications include a low on-resistance (RDS(on)), which minimizes power loss during operation, and a fast switching speed, allowing for efficient energy conversion and reduced heat generation. The device is housed in a TO-220 package, facilitating effective heat dissipation.
The NCE60P82A is popular in automotive, industrial, and consumer electronics applications due to its reliability and efficiency. Overall, it is an ideal choice for designers seeking robust performance in demanding electrical environments.
Features
The NCE60P82A is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Handling: The device can carry continuous drain current (I_D) up to 82A, making it suitable for power-intensive applications.
3. Low R_DS(on): It offers a low on-resistance, which reduces power loss and improves efficiency during operation.
4. Fast Switching Speed: Designed for rapid switching, it is ideal for applications in power supplies and motor control.
5. Thermal Performance: The construction allows for effective heat dissipation, enhancing reliability in high-temperature environments.
6. Package Type: Usually available in TO-220 or similar packages that facilitate heat sinking.
These features make the NCE60P82A ideal for various applications, including power management, automotive, and industrial systems.
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Handling: The device can carry continuous drain current (I_D) up to 82A, making it suitable for power-intensive applications.
3. Low R_DS(on): It offers a low on-resistance, which reduces power loss and improves efficiency during operation.
4. Fast Switching Speed: Designed for rapid switching, it is ideal for applications in power supplies and motor control.
5. Thermal Performance: The construction allows for effective heat dissipation, enhancing reliability in high-temperature environments.
6. Package Type: Usually available in TO-220 or similar packages that facilitate heat sinking.
These features make the NCE60P82A ideal for various applications, including power management, automotive, and industrial systems.
Package
The NCE60P82A is packaged in a TO-220 format, which is commonly used for power transistors. This package type provides good thermal performance and allows for efficient heat dissipation, making it suitable for high-power applications.
Pinout
The NCE60P82A is a power MOSFET with a typical pin count of 3. Its pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET's operation, allowing the device to switch on and off.
2. Drain (D) - The current flows out of this terminal when the MOSFET is in the on state.
3. Source (S) - This pin is connected to the ground or the low side of the circuit.
The NCE60P82A is designed for high-speed switching applications, making it suitable for various power management tasks, such as in power supplies and motor control systems. Its structure allows for efficient switching with low on-resistance, enhancing overall circuit performance.
1. Gate (G) - This pin controls the MOSFET's operation, allowing the device to switch on and off.
2. Drain (D) - The current flows out of this terminal when the MOSFET is in the on state.
3. Source (S) - This pin is connected to the ground or the low side of the circuit.
The NCE60P82A is designed for high-speed switching applications, making it suitable for various power management tasks, such as in power supplies and motor control systems. Its structure allows for efficient switching with low on-resistance, enhancing overall circuit performance.
Manufacturer
The NCE60P82A is manufactured by NCE Power Semiconductor. NCE Power Semiconductor is a company that specializes in the design and production of power semiconductor devices, particularly focusing on power MOSFETs, IGBTs, diodes, and other electronic components used in various applications, including automotive, industrial, and consumer electronics. Their products are utilized in power management and conversion, enabling efficient energy usage and improving the performance of electronic systems.
Application
The NCE60P82A is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its application areas include power supply circuits, motor drives, renewable energy systems (like solar inverters), switching regulators, and general-purpose power management. It is suitable for use in high-efficiency power conversion and control systems due to its low on-resistance and fast switching capabilities.
Equivalent
The NCE60P82A is a power MOSFET. Equivalent products include the IRF840, STP60NF06, and FQP50N60. Always verify specifications such as voltage, current ratings, and gate threshold voltages before substituting.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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