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NCE30P12S

Name: NCE30P12S
Rating: 4.7 (12 reviews)

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Mfr。パート #NCE30P12S
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データシート NCE30P12S DataSheet
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仕様

Manufacturer	Wuxi NCE Power Semiconductor
Package	SOIC-8
Operating Temperature	-55℃~+150℃
Current - Continuous Drain(Id)	12A
Pd - Power Dissipation	3W
Drain to Source Voltage	30V
RDS(on)	25mΩ@4.5V,7A
Gate Threshold Voltage (Vgs(th)@Id)	1.5V
Type	1 piece P-channel
Gate Charge(Qg)	24nC
Reverse Transfer Capacitance (Crss@Vds)	180pF

概要

Description

The NCE30P12S is an N-channel power MOSFET designed for applications requiring efficient switching and control of high-current loads. It typically features a maximum drain-source voltage (VDS) of 120V and a continuous drain current (ID) rating of 30A, making it suitable for power management in various electronic circuits.
Key specifications often include low on-resistance (RDS(on)), which reduces power losses during operation, and fast switching speeds, enabling efficient performance in applications such as power supplies, motor drives, and inverters. The NCE30P12S is typically housed in a TO-220 package, facilitating heat dissipation and easy mounting.
When selecting the NCE30P12S for a design, consider factors such as thermal management, gate drive requirements, and the specific voltage and current needs of the application. Overall, it is an effective choice for enhancing the efficiency and reliability of power electronics systems.

Features

The NCE30P12S is a N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 120V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 30A, making it suitable for high-power applications.
3. Low On-Resistance: It has a low R_DS(on), which reduces power loss and increases efficiency during operation.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, enhancing performance in switching applications.
5. Thermal Performance: Equipped with a TO-220 package, it offers good thermal dissipation capabilities.
6. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for easy drive from common microcontrollers and logic levels.
Overall, the NCE30P12S is ideal for applications such as motor control, power supplies, and other high-efficiency power management systems.

Package

The NCE30P12S is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used for power transistors and semiconductor devices.

Pinout

The NCE30P12S is a P-channel MOSFET typically used in power management applications. It has a standard pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's on/off state. A negative voltage relative to the source turns the device on.
2. Source (S): This is the terminal connected to the positive voltage supply. It serves as the input for the current when the MOSFET is in the on state.
3. Drain (D): This is the terminal through which the current flows out when the MOSFET is conducting.
The NCE30P12S is characterized by its high voltage and current handling capabilities, making it suitable for switching applications in power electronics.

Manufacturer

The NCE30P12S is manufactured by NCE Power Semiconductor. NCE Power Semiconductor is a company that specializes in the design and production of power semiconductor devices, including transistors and diodes. They focus on providing high-performance components for various applications in industries like automotive, consumer electronics, and industrial equipment. Their products are designed to meet the growing demands for efficient power management and energy conversion.

Application

The NCE30P12S is a P-channel MOSFET commonly used in power management applications, including switching power supplies, battery management systems, and motor control circuits. Its characteristics make it suitable for load switching, high-speed switching applications, and as a high-side switch in various electronic devices. Additionally, it can be utilized in audio amplifiers and other low-voltage applications where efficient power control is required.

Equivalent

The NCE30P12S is a 30A, 1200V P-channel MOSFET. Equivalent products include the IRF9520, FQP27P12, and STP30P12. Ensure to check specifications like V_DS, I_D, R_DS(on), and package type for compatibility.