NAND256W3A2BN6E

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NAND256W3A2BN6E

IC FLASH 256MBIT PARALLEL 48TSOP

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仕様

Part Status Obsolete
Base Product Number NAND256
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 256Mbit
Memory Organization 32M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 50ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Packaging Tray
Access Time 50 ns

概要

Description

The NAND256W3A2BN6E is a NAND Flash memory chip produced by STMicroelectronics. It is part of the NAND Flash memory family, which is widely used for data storage in various electronic devices. This specific model typically features a 256Mb (megabit) storage capacity, making it suitable for use in applications that require moderate storage space, such as embedded systems, consumer electronics, or industrial applications.
Key characteristics of the NAND256W3A2BN6E include its non-volatile nature, meaning it retains data even when power is removed. It employs a parallel interface for data transfer, which allows for efficient read and write operations. The chip's architecture supports basic memory operations like page read, block erase, and program, essential for managing data effectively.
Additionally, NAND Flash memory like the NAND256W3A2BN6E is valued for its high-density storage capabilities, cost-effectiveness, and durability, as it can withstand a limited number of program/erase cycles. However, it is important to pair it with appropriate error correction codes (ECC) to manage potential data integrity issues commonly associated with NAND Flash technology.

Features

The NAND256W3A2BN6E is a NAND Flash memory component designed for efficient data storage solutions. Key features include:
1. Capacity: Offers a storage capacity of 256 Mb.
2. Architecture: Utilizes a 528-byte page size structure, enhancing data management and access speed.
3. Interface: Supports a standard NAND Flash interface, facilitating compatibility with various controllers.
4. Voltage: Operates at a low voltage of 1.8V, promoting energy efficiency.
5. Performance: Designed for fast read and write operations, optimizing data transfer rates.
6. Endurance: Provides a high number of program/erase cycles, ensuring long-term reliability and durability.
7. Error Correction: Incorporates error correction code (ECC) capabilities to maintain data integrity.
8. Package: Available in a compact TSOP package, allowing for integration in space-constrained applications.
9. Applications: Suitable for use in mobile devices, consumer electronics, and other applications requiring dependable and efficient data storage.
This component is ideal for designers seeking reliable, high-performance NAND Flash memory in compact form factors.

Package

The NAND256W3A2BN6E is a NAND flash memory chip from STMicroelectronics. It typically comes in a TSOP (Thin Small Outline Package) type, specifically a 48-pin TSOP. This package type is commonly used for surface mounting on circuit boards, providing a balance between compact form and sufficient pin count for interfacing.

Pinout

The NAND256W3A2BN6E is a NAND Flash memory chip manufactured by Micron Technology. It typically has a 48-pin TSOP (Thin Small Outline Package). The primary function of this chip is to provide non-volatile storage, meaning it retains data even when the power is turned off, making it suitable for use in applications like data storage, embedded systems, and mobile devices.
Key features include:
- A density of 256Mb.
- Organized in 16,896 blocks.
- Each block consists of 64 pages of 2112 bytes each.
- Supports standard NAND Flash interfaces for communication.
The chip is designed for applications that require high-density, cost-effective memory storage. It utilizes advanced NAND cell technology to deliver reliable performance and effective data storage solutions.

Manufacturer

The NAND256W3A2BN6E is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. It is a leading company in the semiconductor industry, known for designing and producing a wide range of semiconductor products, including microcontrollers, sensors, and power management devices. The company serves various markets such as automotive, industrial, personal electronics, and communications, providing innovative solutions and technologies to meet the needs of its global customer base.

Application

The NAND256W3A2BN6E is a NAND flash memory chip used in various applications requiring non-volatile storage. Its primary applications include embedded systems, industrial automation, consumer electronics, portable devices, and automotive systems. This chip provides reliable storage for firmware, software, and data, making it suitable for use in smartphones, tablets, and digital cameras. Its robust data retention and endurance also make it ideal for use in harsh environments typical of industrial and automotive sectors.

Equivalent

The NAND256W3A2BN6E is a 256Mb NAND Flash memory chip. Equivalent products would typically include NAND Flash memory chips with similar specifications and pin configurations from other manufacturers, such as the MT29F256G08A from Micron, the K9F2G08U0C from Samsung, or the TH58NVG2S3HTA20 from Toshiba. Ensure compatibility by checking specific parameters like voltage, interface, and package type.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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