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MX52LM04A11XVW
IC FLASH 4GB EMMC 153-BGA (11.5X
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- Mfr。パート #MX52LM04A11XVW
- パッケージ
- データシート MX52LM04A11XVW DataSheet
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仕様
| Series | e•MMC™ |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (MLC) |
| Memory Size | 32Gbit |
| Memory Organization | 4G x 8 |
| Memory Interface | eMMC_5.1 |
| Clock Frequency | 200 MHz |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -25°C ~ 85°C |
| Mounting Type | Surface Mount |
| Package | 153-VFBGA |
| Supplier Device Package | 153-LFBGA (11.5x13) |
| Packaging | Tray |
概要
Description
The MX52LM04A11XVW is a high-performance, low-power SRAM (Static Random Access Memory) chip designed for use in various electronic applications. It typically features a density of 4 Megabits and operates efficiently at low voltage levels, making it suitable for battery-operated devices. The chip is designed for fast access times, which enhances the speed of data retrieval and processing in embedded systems.
Key features include a wide operating temperature range, low standby current, and compatibility with standard memory interfaces, allowing seamless integration into different circuit designs. Its architecture supports both asynchronous and synchronous operation modes, providing flexibility for diverse applications.
The MX52LM04A11XVW is often used in consumer electronics, telecommunications, automotive systems, and industrial applications where reliable and quick data storage is essential. Its efficiency and performance make it a preferred choice for developers seeking robust memory solutions in their designs.
Key features include a wide operating temperature range, low standby current, and compatibility with standard memory interfaces, allowing seamless integration into different circuit designs. Its architecture supports both asynchronous and synchronous operation modes, providing flexibility for diverse applications.
The MX52LM04A11XVW is often used in consumer electronics, telecommunications, automotive systems, and industrial applications where reliable and quick data storage is essential. Its efficiency and performance make it a preferred choice for developers seeking robust memory solutions in their designs.
Features
The MX52LM04A11XVW is a low-power, high-performance 4Mbit (512K x 8) SRAM (Static Random Access Memory) chip designed for a variety of applications. Key features include:
1. Memory Capacity: 4 Mbits (512K x 8 bits), providing ample storage for embedded systems.
2. Low Power Consumption: Optimized for low power usage, making it suitable for battery-operated devices.
3. Fast Access Time: Offers quick read and write cycles, enhancing system performance.
4. Wide Operating Voltage Range: Compatible with various supply voltages, which increases its versatility in different designs.
5. Asynchronous Operation: Simplifies interfacing, as it does not require a clock signal for operation.
6. Industrial Temperature Range: Designed to operate effectively in harsh environments, improving reliability in industrial applications.
These features make the MX52LM04A11XVW a suitable choice for applications in consumer electronics, automotive systems, and telecommunications.
1. Memory Capacity: 4 Mbits (512K x 8 bits), providing ample storage for embedded systems.
2. Low Power Consumption: Optimized for low power usage, making it suitable for battery-operated devices.
3. Fast Access Time: Offers quick read and write cycles, enhancing system performance.
4. Wide Operating Voltage Range: Compatible with various supply voltages, which increases its versatility in different designs.
5. Asynchronous Operation: Simplifies interfacing, as it does not require a clock signal for operation.
6. Industrial Temperature Range: Designed to operate effectively in harsh environments, improving reliability in industrial applications.
These features make the MX52LM04A11XVW a suitable choice for applications in consumer electronics, automotive systems, and telecommunications.
Package
The MX52LM04A11XVW is typically packaged in a 32-pin TFBGA (Thin Fine Pitch Ball Grid Array) format, which is designed for compact and efficient integration in electronic devices, allowing for a reduced footprint and improved thermal performance.
Pinout
The MX52LM04A11XVW is a 4Mbit (512K x 8) CMOS SRAM chip. It typically has a 32-pin configuration in a standard TSOP (Thin Small Outline Package) or similar package type. The pin count and function include:
- Address Pins (A0-A18): 19 pins used for addressing memory locations.
- Data Pins (D0-D7): 8 pins for data input/output.
- Chip Enable (CE): Activates the chip for read/write operations.
- Output Enable (OE): Controls the output of data from the chip.
- Write Enable (WE): Allows data to be written into the memory.
- Vcc: Power supply pin.
- GND: Ground reference pin.
This SRAM is typically used in applications requiring fast access times, such as cache memory, networking equipment, and telecommunications.
- Address Pins (A0-A18): 19 pins used for addressing memory locations.
- Data Pins (D0-D7): 8 pins for data input/output.
- Chip Enable (CE): Activates the chip for read/write operations.
- Output Enable (OE): Controls the output of data from the chip.
- Write Enable (WE): Allows data to be written into the memory.
- Vcc: Power supply pin.
- GND: Ground reference pin.
This SRAM is typically used in applications requiring fast access times, such as cache memory, networking equipment, and telecommunications.
Manufacturer
The MX52LM04A11XVW is manufactured by Macronix International Co., Ltd. Macronix is a leading company in the semiconductor industry, specializing in non-volatile memory solutions, including NOR flash memory and ROM products. Founded in 1989 and headquartered in Hsinchu, Taiwan, Macronix develops, manufactures, and sells a variety of memory products used in consumer electronics, automotive applications, and industrial devices. The company focuses on advanced memory technology and provides solutions to meet the demands of the rapidly evolving electronics market.
Application
The MX52LM04A11XVW is a low-power, high-performance SRAM memory chip, commonly used in applications such as consumer electronics, portable devices, automotive systems, and industrial automation. Its features make it suitable for use in mobile devices, IoT devices, and networking equipment where fast data access and energy efficiency are crucial.
Equivalent
The MX52LM04A11XVW chip is a 512K x 4-bit CMOS SRAM. Equivalent products include:
1. Cypress CY7C199
2. IDT 70C512L
3. Micron MT4LC512K
4. Alliance AS7C512K
Check specific datasheets for pin compatibility and performance characteristics before substituting.
1. Cypress CY7C199
2. IDT 70C512L
3. Micron MT4LC512K
4. Alliance AS7C512K
Check specific datasheets for pin compatibility and performance characteristics before substituting.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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