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MUN5211DW1T1G

Name: MUN5211DW1T1G
Rating: 4.7 (12 reviews)

TRANS PREBIAS 2NPN 50V SC88

メーカー
Mfr。パート #MUN5211DW1T1G
パッケージ SOT-363-6
データシート
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仕様

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Active
TransistorType	2 NPN - Pre-Biased (Dual)
Current-Collector(Ic)(Max)	100mA
Voltage-CollectorEmitterBreakdown(Max)	50V
Resistor-Base(R1)	10kOhms
Resistor-EmitterBase(R2)	10kOhms
DCCurrentGain(hFE)(Min)@IcVce	35 @ 5mA, 10V
VceSaturation(Max)@IbIc	250mV @ 300µA, 10mA
Current-CollectorCutoff(Max)	500nA
Power-Max	250mW
MountingType	Surface Mount
Package/Case	6-TSSOP, SC-88, SOT-363

概要

Description

MUN5211DW1T1G is likely a course code or identifier used in an academic setting, possibly related to a specific subject within a university or college curriculum. The "MUN" prefix might indicate that the course is part of a program focused on municipal governance, public administration, or a similar field, while the numerical component could signify the course level and section.
The course may cover topics such as public policy, urban development, governance structures, or community engagement. Students enrolled in MUN5211DW1T1G would typically engage in lectures, discussions, and assignments designed to deepen their understanding of municipal issues and develop skills necessary for careers in public service or administration.
For detailed information, including prerequisites, course objectives, and assessment methods, it would be best to refer to the specific academic institution’s course catalog or syllabus.

Features

The MUN5211DW1T1G is a dual N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 2.3A, providing robust performance in demanding applications.
3. R_DS(on): The typical on-resistance is low, around 50 mΩ at V_GS = 10V, ensuring efficient operation with minimal power loss.
4. Package Type: It comes in a compact surface-mount SO-8 package, facilitating space-saving designs.
5. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 1-2.5V, enabling easy drive with standard logic levels.
6. Fast Switching: Optimized for fast switching speeds, making it ideal for applications such as DC-DC converters and motor drivers.
These features contribute to its efficiency and reliability in electronic circuits.

Package

The MUN5211DW1T1G is packaged in a SOT-23 (Small Outline Transistor) package type, which is a surface-mount device commonly used for its compact size and efficiency in circuit design.

Pinout

The MUN5211DW1T1G is a dual N-channel MOSFET packaged in a SOT-363 (6-pin) configuration. It features a pin count of 6. The primary functions of this device are to serve as a switch or amplifier in various electronic circuits, benefiting from low on-resistance and fast switching capabilities.
The pinout is as follows:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal for the first N-channel MOSFET.
3. Drain 1 - Drain terminal for the first N-channel MOSFET.
4. Drain 2 - Drain terminal for the second N-channel MOSFET.
5. Source 2 - Source terminal for the second N-channel MOSFET.
6. Gate 2 - Controls the second N-channel MOSFET.
This configuration allows for efficient control of power in compact applications.

Manufacturer

The MUN5211DW1T1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions. ON Semiconductor specializes in various electronic components, including discrete semiconductors, sensors, and integrated circuits. The company serves multiple markets, including automotive, industrial, and consumer electronics, focusing on energy-efficient solutions and advanced technologies. Founded in 1999, ON Semiconductor has grown through strategic acquisitions and innovation, positioning itself as a key player in the semiconductor industry.

Application

The MUN5211DW1T1G is a dual N-channel MOSFET designed for applications in power management, including DC-DC converters, load switching, and power routing. Its low on-resistance and fast switching capabilities make it suitable for use in battery-powered devices, lighting control, and other circuits requiring efficient power modulation. Additionally, it can be utilized in automotive applications and general-purpose switching tasks.

Equivalent

The MUN5211DW1T1G is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. When selecting an equivalent, ensure to verify specifications such as voltage, current ratings, and package type to guarantee compatibility with your application.